Diodes Incorporated - DDTC123JCA

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: BOTTOM;

BC817.40 by Central Semiconductor is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a max collector current of 0.5A. It has a min DC current gain of 250 and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low power dissipation and high frequency performance, such as amplifiers and switching circuits.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

MMBT5551LT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.2V, hFE of 30, and IC of 0.06A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 160V. Its small outline package makes it suitable for surface mount designs.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

Vishay Intertechnology's ULN2803LW is an NPN BJT transistor with 8 elements and 18 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and operates b/w -20 to 85°C. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

2N2907AUB by Microchip is a PNP BJT transistor with 60V VCE, 0.6A IC, and 1.16W power dissipation. Ideal for switching applications due to its fast turn-on time of 45ns and small outline package style. Suitable for surface mount designs with ceramic-metal sealed co-fired body material.

MMBT2222AWT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max collector current of 0.6A, and min DC current gain of 40. With a package style of small outline and surface mount capability, it operates at up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.