12 Buffer Amplifiers 33

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Part RoHS Manufacturer Amplifier Type Temperature Grade Terminal Form No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Nominal Unity Gain Bandwidth Maximum Negative Supply Voltage Limit Low-Bias Maximum Input Offset Voltage Maximum Average Bias Current (IIB) Surface Mount No. of Functions Minimum Common Mode Reject Ratio Technology Screening Level Nominal Common Mode Reject Ratio Maximum Supply Current Nominal Negative Supply Voltage (Vsup) Architecture Programmable Power Packing Method Nominal Supply Voltage / Vsup (V) Power Supplies (V) Package Style (Meter) Package Equivalence Code Minimum Slew Rate Sub-Category Nominal Slow Rate Maximum Supply Voltage Limit Terminal Pitch Maximum Operating Temperature Maximum Bias Current (IIB) @25C Frequency Compensation Minimum Voltage Gain Minimum Operating Temperature Terminal Finish Terminal Position Low-Offset JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Seated Height Width Qualification Minimum Output Current Nominal Bandwidth (3dB) Micropower JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Length Wideband Power

LH0033CG

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

25 mV

20 nA

No

1

Bipolar

24 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1400 V/us

20 V

0.1 in (2.54 mm)

85 °C (185 °F)

5 nA

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

100 MHz

e0

LH0033G

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

15 mV

10 nA

No

1

Bipolar

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

100 MHz

e0

ADLH0033CG

Analog Devices

Buffer

Other

Through-Hole

12

QIP

Square

Metal

25 mV

No

1

Hybrid

25 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

85 °C (185 °F)

5 nA

-25 °C (-13 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

LH0033ACG

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

20 mV

10 nA

No

1

Bipolar

24 mA

-15 V

15 V

±5/±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1400 V/us

20 V

0.1 in (2.54 mm)

85 °C (185 °F)

2.5 nA

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

100 MHz

e0

LH0033G-MIL

National Semiconductor

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

15 mV

250 pA

No

1

FET

MIL-STD-883 Class B (Modified)

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

2000 V/us

Buffer Amplifiers

2400 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin/Lead

Bottom

O-MBCY-W12

No

200 MHz

e0

LH0033G/883B

National Semiconductor

Buffer

Military

Wire

12

QIP

Round

Metal

-20 V

15 mV

2.5 nA

No

1

Hybrid

MIL-STD-883 Class B

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

200 MHz

e0

HA2-5033-5

Intersil

Buffer

Commercial Extended

Wire

12

QIP

Round

Metal

-20 V

25 mV

50 uA

No

1

Bipolar

30 mA

-12 V

12 V

±12 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1100 V/us

20 V

0.1 in (2.54 mm)

75 °C (167 °F)

35 uA

0 °C (32 °F)

Tin Lead

Bottom

O-MBCY-W12

No

80 mA

250 MHz

e0

HOS200SH

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

18 mV

No

1

Hybrid

20 mA

-5 V

5 V

±5 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

200 MHz

e0

ADLH0033G

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

25 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

150 pA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

HOS-100SHB

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

25 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

16 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

125 MHz

e0

8001401ZX

Analog Devices

Buffer

Military

Pin/Peg

12

Round

Metal

-40 V

3 nA

No

1

Cylindrical

Buffer Amplifiers

40 V

125 °C (257 °F)

-55 °C (-67 °F)

Bottom

O-MBCY-P12

No

HOS-200SHB

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

18 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

20 mA

-5 V

5 V

±5 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

200 MHz

e0

HOS200AH

Analog Devices

Buffer

Other

Through-Hole

12

QIP

Square

Metal

25 mV

No

1

Hybrid

16 mA

-5 V

5 V

±5 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

85 °C (185 °F)

25 uA

-25 °C (-13 °F)

Tin/Lead

Quad

S-MQIP-T12

No

200 MHz

e0

ADLH0033GB

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

25 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

150 pA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

HOS-100AH

Analog Devices

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

35 mV

25 uA

No

1

Bipolar

20 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1400 V/us

20 V

0.1 in (2.54 mm)

85 °C (185 °F)

25 uA

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

125 MHz

e0

HOS-100SH

Analog Devices

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

25 mV

25 uA

No

1

Bipolar

16 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

125 MHz

e0

ADLH0033G/883B

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

38535Q/M;38534H;883B

22 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

150 pA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

e0

HOS100SH/883B

Analog Devices

Buffer

Military

Through-Hole

12

QIP

Square

Metal

25 mV

No

1

Hybrid

38535Q/M;38534H;883B

16 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

20 uA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

125 MHz

e0

HOS-100SH/883

Analog Devices

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

25 uA

No

1

Bipolar

-15 V

15 V

Cylindrical

1500 V/us

20 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

e0

LH0033G-T

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

15 mV

10 nA

No

1

Bipolar

22 mA

-15 V

15 V

Cylindrical

1000 V/us

1500 V/us

20 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

e0

EL2005G

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

10 mV

5 nA

No

1

Bipolar

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

500 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

140 MHz

e0

LH0033G/HR

Maxim Integrated

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

22 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

2.5 nA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

LH0033ACG-T

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

20 mV

10 nA

No

1

Bipolar

24 mA

-15 V

15 V

Cylindrical

1000 V/us

Buffer Amplifiers

1400 V/us

20 V

85 °C (185 °F)

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

e0

LH0033CG-T

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

25 mV

20 nA

No

1

Bipolar

24 mA

-15 V

15 V

Cylindrical

1000 V/us

Buffer Amplifiers

1400 V/us

20 V

85 °C (185 °F)

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

e0

EL2005CG

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

15 mV

5 nA

No

1

Bipolar

24 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

85 °C (185 °F)

1 nA

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

140 MHz

e0

LH0033AG

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

10 mV

7.5 nA

No

1

Bipolar

22 mA

-15 V

15 V

±5/±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

1.5 nA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

100 MHz

e0

LH0033AG/HR

Maxim Integrated

Buffer

Military

Through-Hole

12

QIP

Square

Metal

15 mV

No

1

Hybrid

MIL-STD-883 Class B (Modified)

22 mA

±5/±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

1.5 nA

-55 °C (-67 °F)

Tin/Lead

Quad

S-MQIP-T12

No

100 MHz

e0

MAX460IGC

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

15 mV

5 nA

No

1

Bipolar

24 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

85 °C (185 °F)

1 nA

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

140 MHz

e0

MAX460MGC

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

10 mV

5 nA

No

1

Bipolar

22 mA

-15 V

15 V

±15 V

Cylindrical

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

0.1 in (2.54 mm)

125 °C (257 °F)

500 pA

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

140 MHz

e0

MAX460IGC-T

Maxim Integrated

Buffer

Other

Wire

12

TO-8

Round

Metal

-20 V

15 mV

5 nA

No

1

Bipolar

-15 V

15 V

Cylindrical

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

85 °C (185 °F)

-25 °C (-13 °F)

Tin Lead

Bottom

O-MBCY-W12

No

e0

LH0033AG-T

Maxim Integrated

Buffer

Military

Wire

12

TO-8

Round

Metal

-20 V

10 mV

7.5 nA

No

1

Bipolar

22 mA

-15 V

15 V

Cylindrical

1000 V/us

Buffer Amplifiers

1500 V/us

20 V

125 °C (257 °F)

-55 °C (-67 °F)

Tin Lead

Bottom

O-MBCY-W12

No

e0

EL2005G/883B

Renesas Electronics

Buffer

Military

Through-Hole

12

QIP

Square

Metal

10 mV

No

1

38535Q/M;38534H;883B

22 mA

-15 V

15 V

±15 V

In-Line

QUAD12,.4SQ

1000 V/us

Buffer Amplifiers

0.1 in (2.54 mm)

125 °C (257 °F)

500 pA

-55 °C (-67 °F)

Quad

S-MQIP-T12

No

140 MHz

HA2-5033-2

Renesas Electronics

Buffer

Pin/Peg

12

Round

Metal

-20 V

25 mV

50 uA

No

1

Bipolar

30 mA

-12 V

12 V

Cylindrical

CAN12,.4

0.001 V/us

Buffer Amplifiers

0.0011 V/us

20 V

125 °C (257 °F)

35 uA

-55 °C (-67 °F)

Bottom

O-MBCY-P12

80 mA

250 MHz

Buffer Amplifiers

Buffer amplifiers are electronic circuits that are designed to provide a high input impedance and a low output impedance. They are used to isolate one part of a circuit from another, preventing changes in one part of the circuit from affecting the other.

The primary function of a buffer amplifier is to prevent loading effects, which occur when a device with a low input impedance is connected to a device with a high output impedance. In this scenario, the high output impedance of the first device may cause a decrease in signal strength or distortion in the second device.

By using a buffer amplifier, the high output impedance of the first device is isolated from the second device, ensuring that the signal is transferred with minimal distortion. The buffer amplifier acts as a bridge between the two devices, allowing them to operate independently.

Buffer amplifiers are commonly used in audio applications, such as preamplifiers, where they can be used to isolate a sensitive input signal from a power amplifier that requires a low impedance input. They are also used in other applications, such as instrumentation, signal conditioning, and data acquisition, where signal integrity is critical.