Part | RoHS | Manufacturer | Oscillator Type | Mounting Feature | No. of Terminals | Frequency Stability | Frequency Adjustment (Mechanical) | Package Body Material | Maximum Supply Voltage | Technology | Output Load | Maximum Supply Current | Nominal Supply Voltage | Power Supplies (V) | Package Equivalence Code | Maximum Rise Time | Linearity | Sub-Category | Physical Dimension | Minimum Supply Voltage | Maximum Operating Temperature | Minimum Control Voltage | Minimum Operating Temperature | Terminal Finish | Frequency Deviation or Pullability | Nominal Operating Frequency | Maximum Control Voltage | Maximum Fall Time | Maximum Symmetry (%) | Manufacturer Series | Qualification | Maximum Output Low Current | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Abracon |
CMOS/TTL |
SURFACE MOUNT |
6 |
50 % |
NO |
3.465 V |
5 TTL, 15 pF |
15 mA |
3.3 V |
DILCC6,.2 |
4 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
70 Cel |
.15 V |
0 Cel |
GOLD OVER NICKEL |
100 ppm |
40 MHz |
3.15 V |
4 ns |
40/60 |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
|
Microchip Technology |
CMOS/TTL |
SURFACE MOUNT |
NO |
3.63 V |
15 pF |
5 % |
2.25 V |
70 Cel |
0 V |
0 Cel |
150 ppm |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; WAFFLE PACK |
36 MHz |
130 MHz |
|||||||||||||||||||
|
Abracon |
|||||||||||||||||||||||||||||||||||
|
Microchip Technology |
PECL |
SURFACE MOUNT |
NO |
3.63 V |
50 OHM |
3.3 V |
1.5 ms |
10 % |
2.97 V |
70 Cel |
0 V |
0 Cel |
100 ppm |
3.3 V |
1.5 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; WAFFLE PACK |
100 MHz |
200 MHz |
||||||||||||||||
|
Microchip Technology |
LVCMOS |
SURFACE MOUNT |
8 |
NO |
3.63 V |
15 pF |
5 % |
2.25 V |
70 Cel |
0 V |
0 Cel |
MATTE TIN |
150 ppm |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TR |
e3 |
1 MHz |
18 MHz |
||||||||||||||||
Microchip Technology |
LVPECL |
SURFACE MOUNT |
NO |
3.63 V |
50 OHM |
3.3 V |
1.5 ms |
10 % |
2.97 V |
70 Cel |
0 V |
0 Cel |
200 ppm |
3.3 V |
1.5 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; WAFFLE PACK |
.75 MHz |
800 MHz |
|||||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
130 ppm |
125 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TRAY |
e4 |
10 MHz |
160 MHz |
||||
|
Silicon Labs |
LVDS |
SURFACE MOUNT |
8 |
100 % |
NO |
3.63 V |
100 OHM |
108 mA |
3.3 V |
LCC8,.2X.28,100 |
.35 ms |
10 % |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
80 ppm |
3.3 V |
.35 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; MIL-STD-883 |
e4 |
10 MHz |
810 MHz |
|||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
100 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Silicon Labs |
LVDS |
SURFACE MOUNT |
8 |
100 % |
NO |
3.63 V |
100 OHM |
108 mA |
3.3 V |
LCC8,.2X.28,100 |
.35 ms |
10 % |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
80 ppm |
3.3 V |
.35 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; MIL-STD-883 |
e4 |
10 MHz |
810 MHz |
|||||||||
|
Onsemi |
LVDS |
SURFACE MOUNT |
6 |
50 % |
NO |
CERAMIC |
3.63 V |
100 OHM |
100 mA |
3.3 V |
3.3 |
DILCC6,.2 |
.4 ms |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.9mm |
2.97 V |
85 Cel |
.65 V |
-40 Cel |
100 ppm |
200 MHz |
2.65 V |
.4 ns |
55/45 |
NBVSPA015 |
Not Qualified |
TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
60 MHz |
700 MHz |
|||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
25 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
96 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TAPE |
80 MHz |
200 MHz |
|||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
25 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
96 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TR, 13 INCH |
80 MHz |
200 MHz |
|||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
50 % |
NO |
3.3 V |
40 ms |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
1600 ppm |
40 ns |
e4 |
1 MHz |
80 MHz |
|||||||||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
375 ppm |
107.964 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TRAY |
e4 |
10 MHz |
160 MHz |
||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
375 ppm |
107.964 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
|
Abracon |
CMOS/TTL |
SURFACE MOUNT |
6 |
25 % |
NO |
3.465 V |
5 TTL, 15 pF |
35 mA |
3.3 V |
DILCC6,.2 |
3 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
70 Cel |
.15 V |
0 Cel |
GOLD OVER NICKEL |
100 ppm |
77.76 MHz |
3.15 V |
3 ns |
40/60 |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
|
Abracon |
CMOS/TTL |
SURFACE MOUNT |
6 |
50 % |
NO |
3.465 V |
5 TTL, 15 pF |
35 mA |
3.3 V |
DILCC6,.2 |
3 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
85 Cel |
.15 V |
-40 Cel |
GOLD OVER NICKEL |
100 ppm |
77.76 MHz |
3.15 V |
3 ns |
40/60 |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
35 % |
NO |
2.625 V |
15 pF |
2.5 V |
1 ms |
7.0mm x 5.0mm x 1.9mm |
2.375 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
100 MHz |
2.5 V |
1 ns |
52/48 |
ENABLE/DISABLE FUNCTION; BULK |
|||||||||||||||
|
Microchip Technology |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
3.465 V |
15 pF |
25 mA |
3.3 V |
DILCC6,.2 |
5 ms |
5 % |
7.0mm x 5.0mm x 2.09mm |
3.135 V |
85 Cel |
.3 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
30 ppm |
125 MHz |
3 V |
5 ns |
55/45 |
e4 |
|||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
12 ppm |
40 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
|
Onsemi |
LVDS |
NBVSPA015 |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
LVCMOS/LVTTL |
TIN |
e3 |
||||||||||||||||||||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
96 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
35 % |
NO |
2.625 V |
15 pF |
2.5 V |
.35 ms |
7.0mm x 5.0mm x 1.9mm |
2.375 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
100 MHz |
2.5 V |
.35 ns |
55/45 |
ENABLE/DISABLE FUNCTION; BULK |
|||||||||||||||
Renesas Electronics |
HCMOS |
SURFACE MOUNT |
6 |
100 % |
NO |
3.465 V |
15 pF |
3.3 V |
3 ms |
7.0mm x 5.0mm x 1.3mm |
3.135 V |
85 Cel |
-40 Cel |
50 ppm |
16 MHz |
3 ns |
55/45 |
ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH LVCMOS OUTPUT |
||||||||||||||||||
|
Abracon |
CMOS/TTL |
SURFACE MOUNT |
6 |
50 % |
NO |
3.465 V |
5 TTL, 15 pF |
35 mA |
3.3 V |
DILCC6,.2 |
3 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
85 Cel |
.15 V |
-40 Cel |
GOLD OVER NICKEL |
150 ppm |
60 MHz |
3.15 V |
3 ns |
40/60 |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
|
Renesas Electronics |
LVCMOS/LVTTL |
TIN |
e3 |
||||||||||||||||||||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
25 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
80 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TAPE |
80 MHz |
200 MHz |
|||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
25 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
96 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TR, 13 INCH |
80 MHz |
200 MHz |
|||||||
|
Abracon |
HCMOS |
SURFACE MOUNT |
6 |
50 % |
NO |
CERAMIC |
3.63 V |
15 pF |
15 mA |
3.3 V |
3.3 |
DILCC6,.2 |
5 ms |
20 % |
Other Oscillators |
7.0mm x 5.0mm x 1.65mm |
2.97 V |
85 Cel |
.3 V |
-40 Cel |
Nickel/Gold (Ni/Au) |
100 ppm |
24.576 MHz |
3 V |
5 ns |
60/40 |
Not Qualified |
4 Amp |
TRI-STATE; ENABLE/DISABLE FUNCTION; BULK |
e4 |
|||||
Renesas Electronics |
LVDS |
SURFACE MOUNT |
NO |
3.465 V |
100 OHM |
3.3 V |
.4 ms |
10 % |
7.5mm x 5.2mm x 1.4mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
80.157 MHz |
3.3 V |
.4 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 10 INCH |
|||||||||||||||||
|
Iqd Frequency Products |
HCMOS |
SURFACE MOUNT |
6 |
100 % |
NO |
CERAMIC |
3.6 V |
15 pF |
50 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 ms |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.7mm |
3 V |
70 Cel |
0 V |
0 Cel |
20 MHz |
3.3 V |
10 ns |
40/60 |
Not Qualified |
TRI-STATE; ENABLE/DISABLE FUNCTION; BULK |
|||||||||
|
Iqd Frequency Products |
HCMOS |
SURFACE MOUNT |
100 % |
NO |
3.6 V |
15 pF |
3.3 V |
10 ms |
10 % |
7.0mm x 5.0mm x 1.7mm |
3 V |
70 Cel |
0 V |
0 Cel |
20 MHz |
3.3 V |
10 ns |
40/60 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE |
||||||||||||||||
|
Iqd Frequency Products |
HCMOS |
SURFACE MOUNT |
100 % |
NO |
3.6 V |
15 pF |
3.3 V |
10 ms |
10 % |
7.0mm x 5.0mm x 1.7mm |
3 V |
70 Cel |
0 V |
0 Cel |
20 MHz |
3.3 V |
10 ns |
40/60 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TR |
||||||||||||||||
|
Microchip Technology |
LVCMOS |
SURFACE MOUNT |
8 |
NO |
3.63 V |
15 pF |
5 % |
2.25 V |
70 Cel |
0 V |
0 Cel |
Matte Tin (Sn) |
150 ppm |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TUBE |
e3 |
1 MHz |
18 MHz |
||||||||||||||||
|
Microchip Technology |
LVCMOS |
SURFACE MOUNT |
16 |
NO |
3.63 V |
10 pF |
3.3 V |
LCC16,.12SQ,20 |
1.6 ms |
10 % |
3.05mm x 3.05mm x 0.8mm |
2.97 V |
70 Cel |
0 V |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
120 ppm |
3.3 V |
1.6 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
60 MHz |
160 MHz |
|||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
100 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
|
Microsemi |
CMOS |
SURFACE MOUNT |
50 % |
NO |
3.63 V |
50 pF |
3.3 V |
200 ms |
7mm x 5mm x 1.4mm |
2.97 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
33.333 MHz |
200 ns |
45/55 |
TRISTATE ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
|||||||||||||||||
Renesas Electronics |
HCMOS |
SURFACE MOUNT |
6 |
100 % |
NO |
3.465 V |
15 pF |
32 mA |
3.3 V |
DILCC6,.12 |
3 ms |
10 % |
5.0mm x 3.2mm x 1.1mm |
3.135 V |
85 Cel |
-40 Cel |
50 ppm |
17.1776 MHz |
3 ns |
55/45 |
ENABLE/DISABLE FUNCTION |
|||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
6 |
20 % |
NO |
PLASTIC/EPOXY |
3.63 V |
15 pF |
75 mA |
3.3 V |
3.3 |
DILCC6,.2 |
10 % |
Other Oscillators |
7.0mm x 5.0mm x 1.85mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
130 ppm |
125 MHz |
3.3 V |
55/45 |
SI550 |
Not Qualified |
32 Amp |
COMPLEMENTARY OUTPUT; TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
10 MHz |
160 MHz |
||||
Silicon Labs |
CMOS |
SURFACE MOUNT |
20 % |
NO |
3.465 V |
15 pF |
1.5 ms |
1.5 % |
5.0mm x 3.2mm x 1.33mm |
1.71 V |
85 Cel |
.18 V |
-40 Cel |
70 ppm |
61.44 MHz |
2.97 V |
1.5 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TR |
|||||||||||||||||
Renesas Electronics |
LVPECL |
|||||||||||||||||||||||||||||||||||
|
Renesas Electronics |
LVPECL |
SURFACE MOUNT |
6 |
100 % |
NO |
CERAMIC |
3.465 V |
50 OHM |
160 mA |
3.3 V |
DILCC6,.2,105 |
.5 ms |
5 % |
7.15mm x 5.15mm x 1.65mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
Matte Tin (Sn) |
787.5 ppm |
3.3 V |
.5 ns |
55/45 |
e3 |
975 MHz |
1300 MHz |
|||||||||
|
Renesas Electronics |
LVPECL |
Matte Tin (Sn) |
e3 |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
LVPECL |
Matte Tin (Sn) |
e3 |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
LVPECL |
Matte Tin (Sn) |
e3 |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
LVPECL |
Matte Tin (Sn) |
e3 |
Voltage Controlled Crystal Oscillators (VCXOs) are electronic devices that generate a stable clock signal with a frequency that can be controlled using a voltage input. They use a crystal resonator as the frequency-determining element, which is voltage-tuned using a varactor diode or a voltage-controlled amplifier. VCXOs offer several advantages in electronic circuit design.
One of the main benefits of VCXOs is their ability to generate a stable and precise clock signal that can be adjusted in real-time using a control voltage. This makes them suitable for use in applications that require precise timing, such as in digital signal processing and telecommunications. VCXOs can generate frequencies ranging from a few megahertz to several hundred megahertz, making them suitable for various electronic circuits.
VCXOs also offer a low phase noise, which is important in applications that require a clean and stable clock signal. The low phase noise of VCXOs makes them ideal for use in communication systems, network equipment, and instrumentation.
Finally, VCXOs have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications. This makes them a cost-effective solution for frequency generation in electronic circuits.