Part | RoHS | Manufacturer | Oscillator Type | Mounting Feature | No. of Terminals | Frequency Stability | Frequency Adjustment (Mechanical) | Package Body Material | Maximum Supply Voltage | Technology | Output Load | Maximum Supply Current | Nominal Supply Voltage | Power Supplies (V) | Package Equivalence Code | Maximum Rise Time | Linearity | Sub-Category | Physical Dimension | Minimum Supply Voltage | Maximum Operating Temperature | Minimum Control Voltage | Minimum Operating Temperature | Terminal Finish | Frequency Deviation or Pullability | Nominal Operating Frequency | Maximum Control Voltage | Maximum Fall Time | Maximum Symmetry (%) | Manufacturer Series | Qualification | Maximum Output Low Current | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
LVDS |
Matte Tin (Sn) |
e3 |
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|
Renesas Electronics |
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|
Renesas Electronics |
LVDS |
Matte Tin (Sn) |
e3 |
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|
Renesas Electronics |
LVDS |
Matte Tin (Sn) |
e3 |
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|
Renesas Electronics |
LVDS |
Matte Tin (Sn) |
e3 |
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|
Renesas Electronics |
LVDS |
Matte Tin (Sn) |
e3 |
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|
Renesas Electronics |
LVDS |
Matte Tin (Sn) |
e3 |
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|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
30 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
122.88 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TAPE |
80 MHz |
200 MHz |
|||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
122.88 MHz |
3.3 V |
3 ns |
55/45 |
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|
Abracon |
LVDS |
SURFACE MOUNT |
6 |
35 % |
NO |
3.465 V |
100 OHM, 10 pF |
40 mA |
3.3 V |
.6 ms |
15 % |
2.5mm x 2.0mm x 1.0mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
35 ppm |
1000 MHz |
3.3 V |
.6 ns |
55/45 |
ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT |
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|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
35 % |
NO |
3.465 V |
50 OHM |
3.3 V |
.6 ms |
15 % |
2.5mm x 2.0mm x 1.0mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
35 ppm |
1000 MHz |
3.3 V |
.6 ns |
55/45 |
ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; BULK |
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|
Abracon |
CMOS/TTL |
SURFACE MOUNT |
6 |
50 % |
NO |
3.465 V |
5 TTL, 15 pF |
10 mA |
3.3 V |
DILCC6,.2 |
5 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
85 Cel |
.15 V |
-40 Cel |
GOLD OVER NICKEL |
100 ppm |
30 MHz |
3.15 V |
5 ns |
40/60 |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
100 OHM |
3.3 V |
1 % |
7.0mm x 5.0mm x 0.85mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
50 ppm |
80 MHz |
2.97 V |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
50 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
100 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
35 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
150 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
35 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
3200 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
35 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
1600 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
|
Microsemi |
CMOS |
SURFACE MOUNT |
50 % |
NO |
3.63 V |
15 pF |
3.3 V |
200 ms |
7mm x 5mm x 1.4mm |
2.97 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
125 MHz |
200 ns |
45/55 |
TRISTATE ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
|||||||||||||||||
|
Seiko Epson |
CMOS |
SURFACE MOUNT |
37 % |
NO |
3.63 V |
15 pF |
3.3 V |
4 ms |
3.2mm x 2.5mm x 1.05mm |
3 V |
85 Cel |
0 V |
-40 Cel |
GOLD |
140 ppm |
27 MHz |
3.3 V |
4 ns |
60/40 |
TR |
e4 |
||||||||||||||
|
Microchip Technology |
LVPECL |
SURFACE MOUNT |
6 |
20 % |
NO |
3.465 V |
50 OHM |
90 mA |
3.3 V |
DILCC6,.2 |
1 ms |
5 % |
7.0mm x 5.0mm x 2.09mm |
3.135 V |
85 Cel |
.3 V |
-40 Cel |
GOLD OVER NICKEL |
50 ppm |
100 MHz |
3 V |
1 ns |
55/45 |
Not Qualified |
ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT |
e4 |
|||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
35 % |
NO |
3.465 V |
15 pF |
3.3 V |
.35 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
122.88 MHz |
3.3 V |
.35 ns |
55/45 |
ENABLE/DISABLE FUNCTION; BULK |
|||||||||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
50 % |
NO |
3.465 V |
15 pF |
60 mA |
3.3 V |
DILCC6,.2 |
.35 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
122.88 MHz |
3.3 V |
.35 ns |
55/45 |
DIFFERENTIAL LVPECL OUTPUT WITH ENABLE/DISABLE FUNCTION |
|||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
70 Cel |
.33 V |
-20 Cel |
80 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
70 Cel |
.33 V |
-20 Cel |
1600 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
50 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
70 Cel |
.33 V |
-20 Cel |
1600 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
Sitime |
LVDS |
SURFACE MOUNT |
35 % |
NO |
3.63 V |
100 OHM |
3.3 V |
.29 ms |
1 % |
3.2mm x 2.5mm x 0.9mm |
2.97 V |
70 Cel |
.33 V |
-20 Cel |
1600 ppm |
250 MHz |
2.97 V |
.29 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
||||||||||||||||
|
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
15 pF |
3.3 V |
1 % |
3.2mm x 2.5mm x 0.75mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
20 ppm |
250 MHz |
2.97 V |
55/45 |
COMPLEMENTARY OUTPUT; TR |
e4 |
|||||||||||||||
|
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
15 pF |
3.3 V |
1 % |
3.2mm x 2.5mm x 0.75mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
50 ppm |
250 MHz |
2.97 V |
55/45 |
COMPLEMENTARY OUTPUT; TR |
e4 |
|||||||||||||||
|
Sitime |
LVDS |
SURFACE MOUNT |
25 % |
NO |
3.63 V |
15 pF |
3.3 V |
1 % |
3.2mm x 2.5mm x 0.75mm |
2.97 V |
85 Cel |
.33 V |
-40 Cel |
NICKEL PALLADIUM GOLD |
3170 ppm |
250 MHz |
2.97 V |
55/45 |
COMPLEMENTARY OUTPUT; TR |
e4 |
|||||||||||||||
|
Silicon Labs |
CMOS |
SURFACE MOUNT |
20 % |
NO |
3.63 V |
15 pF |
3.3 V |
10 % |
7.0mm x 5.0mm x 1.8mm |
2.97 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
375 ppm |
125 MHz |
3.3 V |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TRAY |
e4 |
|||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
80 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Abracon |
CMOS/TTL |
SURFACE MOUNT |
6 |
30 % |
NO |
3.465 V |
5 TTL, 15 pF |
8 mA |
3.3 V |
DILCC6,.2 |
6 ms |
10 % |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
70 Cel |
.15 V |
0 Cel |
Gold (Au) - with Nickel (Ni) barrier |
150 ppm |
24.576 MHz |
3.15 V |
6 ns |
40/60 |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
120 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
80 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Silicon Labs |
LVDS |
SURFACE MOUNT |
6 |
20 % |
NO |
2.75 V |
100 OHM |
26 mA |
2.5 V |
SOLCC6,.12 |
.8 ms |
5 % |
5.0mm x 3.2mm x 1.28mm |
2.25 V |
85 Cel |
.25 V |
-40 Cel |
80 ppm |
2.25 V |
.8 ns |
52/48 |
TRI-STATE; ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; MIL-STD-883; SELECTABLE O/P FREQ |
.1 MHz |
250 MHz |
|||||||||||
|
Silicon Labs |
LVDS |
SURFACE MOUNT |
6 |
20 % |
NO |
3.465 V |
3.3 V |
.35 ms |
1.5 % |
7.0mm x 5.0mm x 1.43mm |
3.135 V |
85 Cel |
.33 V |
-40 Cel |
Nickel/Gold (Ni/Au) |
20 ppm |
100 MHz |
2.97 V |
.35 ns |
55/45 |
ENABLE/DISABLE FUNCTION; 1.8 2.5V SUPPLY VOLTAGE ALSO AVAILABLE; TAPE |
e4 |
|||||||||||||
|
Silicon Labs |
LVDS |
SURFACE MOUNT |
8 |
50 % |
NO |
2.75 V |
100 OHM |
110 mA |
2.5 V |
LCC8,.2X.28,100 |
.35 ms |
10 % |
7.0mm x 5.0mm x 1.8mm |
2.25 V |
85 Cel |
0 V |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
20 ppm |
2.5 V |
.35 ns |
52/48 |
ENABLE/DISABLE FUNCTION; DIFFERENTIAL AND COMPLEMENTARY OUTPUT |
e4 |
10 MHz |
810 MHz |
|||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
40 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
160 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TAPE |
80 MHz |
200 MHz |
|||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
120 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
35 % |
NO |
3.465 V |
15 pF |
3.3 V |
.35 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
491.52 MHz |
3.3 V |
.35 ns |
55/45 |
ENABLE/DISABLE FUNCTION; BULK |
|||||||||||||||
Silicon Labs |
LVDS |
|||||||||||||||||||||||||||||||||||
Silicon Labs |
CMOS |
SURFACE MOUNT |
20 % |
NO |
3.465 V |
15 pF |
1.5 ms |
1.5 % |
5.0mm x 3.2mm x 1.33mm |
1.71 V |
85 Cel |
.18 V |
-40 Cel |
70 ppm |
61.44 MHz |
2.97 V |
1.5 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE |
|||||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
30 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
100 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TAPE |
80 MHz |
200 MHz |
|||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
25 % |
NO |
METAL |
3.465 V |
25 mA |
3.3 V |
3.3 |
DILCC6,.35 |
3 ms |
10 % |
Other Oscillators |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
45 ppm |
81.92 MHz |
3.3 V |
3 ns |
55/45 |
Not Qualified |
TAPE |
80 MHz |
200 MHz |
|||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
100 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
18 % |
NO |
3.465 V |
15 pF |
3.3 V |
DILCC6,.35,200 |
3 ms |
10 % |
14.3mm x 8.7mm x 5.5mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
55 ppm |
96 MHz |
3.3 V |
3 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
6 |
35 % |
NO |
3.465 V |
15 pF |
3.3 V |
1 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
10 MHz |
3.3 V |
1 ns |
52/48 |
ENABLE/DISABLE FUNCTION; BULK |
|||||||||||||||
|
Abracon |
LVDS |
SURFACE MOUNT |
6 |
35 % |
NO |
3.465 V |
3.3 V |
.35 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
0 V |
-40 Cel |
50 ppm |
100 MHz |
3.3 V |
.45 ns |
55/45 |
ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; BULK |
Voltage Controlled Crystal Oscillators (VCXOs) are electronic devices that generate a stable clock signal with a frequency that can be controlled using a voltage input. They use a crystal resonator as the frequency-determining element, which is voltage-tuned using a varactor diode or a voltage-controlled amplifier. VCXOs offer several advantages in electronic circuit design.
One of the main benefits of VCXOs is their ability to generate a stable and precise clock signal that can be adjusted in real-time using a control voltage. This makes them suitable for use in applications that require precise timing, such as in digital signal processing and telecommunications. VCXOs can generate frequencies ranging from a few megahertz to several hundred megahertz, making them suitable for various electronic circuits.
VCXOs also offer a low phase noise, which is important in applications that require a clean and stable clock signal. The low phase noise of VCXOs makes them ideal for use in communication systems, network equipment, and instrumentation.
Finally, VCXOs have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications. This makes them a cost-effective solution for frequency generation in electronic circuits.