Part | RoHS | Manufacturer | Amplifier Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Nominal Unity Gain Bandwidth | Maximum Negative Supply Voltage Limit | Low-Bias | Maximum Input Offset Voltage | Maximum Average Bias Current (IIB) | Surface Mount | No. of Functions | Minimum Common Mode Reject Ratio | Technology | Screening Level | Nominal Common Mode Reject Ratio | Maximum Supply Current | Nominal Negative Supply Voltage (Vsup) | Architecture | Programmable Power | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Package Style (Meter) | Package Equivalence Code | Maximum Input Offset Current (IIO) | Minimum Slew Rate | Sub-Category | Nominal Slow Rate | Maximum Non Linearity | Maximum Supply Voltage Limit | Terminal Pitch | Maximum Operating Temperature | Maximum Bias Current (IIB) @25C | Maximum Common Mode Voltage | Nominal Response Time | Output Type | Frequency Compensation | Minimum Voltage Gain | Minimum Operating Temperature | Terminal Finish | Nominal Voltage Gain | Terminal Position | Low-Offset | JESD-30 Code | Maximum Voltage Gain | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Width | Qualification | Minimum Output Current | Nominal Bandwidth (3dB) | Micropower | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Wideband | Power |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
Operational Amplifier |
Industrial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
3 MHz |
-18 V |
6000 uV |
500 nA |
No |
2 |
BIPOLAR |
90 dB |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.05 |
Operational Amplifiers |
1 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
500 nA |
Yes |
20000 |
-40 °C (-40 °F) |
Tin/Lead |
Single |
No |
R-PSIP-T9 |
0.311 in (7.9 mm) |
0.126 in (3.2 mm) |
No |
e0 |
0.877 in (22.28 mm) |
||||||||||||||||||||||||
Toshiba |
Operational Amplifier |
Industrial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
5 MHz |
6000 uV |
500 nA |
No |
2 |
BIPOLAR |
90 dB |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
2 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
500 nA |
Yes |
20000 |
-40 °C (-40 °F) |
Tin/Lead |
Single |
No |
R-PSIP-T9 |
0.311 in (7.9 mm) |
0.126 in (3.2 mm) |
No |
e0 |
0.877 in (22.28 mm) |
|||||||||||||||||||||||||
Toshiba |
Operational Amplifier |
Industrial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
3 MHz |
Yes |
10000 uV |
200 pA |
No |
2 |
BIPOLAR |
76 dB |
5 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
50 pA |
Operational Amplifiers |
13 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
200 pA |
Yes |
25000 |
-40 °C (-40 °F) |
Tin/Lead |
Single |
No |
R-PSIP-T9 |
0.311 in (7.9 mm) |
0.126 in (3.2 mm) |
No |
e0 |
0.877 in (22.28 mm) |
|||||||||||||||||||||||
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
3 MHz |
Yes |
10000 uV |
No |
2 |
5 mA |
Voltage Feedback |
No |
±5/±15/10/30 V |
SIP9,.06 |
50 pA |
Operational Amplifiers |
13 V/us |
18 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
200 pA |
Yes |
25000 |
-20 °C (-4 °F) |
Tin/Lead |
Single |
No |
No |
No |
e0 |
No |
No |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
No Lead |
9 |
DIE |
Rectangular |
75k Rad(Si) |
No |
400 uV |
25 uA |
Yes |
1 |
90 dB |
SOI-CMOS |
106 dB |
420 μA |
Transconductance |
No |
12 V |
Uncased Chip |
DIE OR CHIP |
42 V |
125 °C (257 °F) |
Yes |
-55 °C (-67 °F) |
Upper |
Yes |
R-XUUC-N9 |
Yes |
No |
No |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
No Lead |
9 |
DIE |
Rectangular |
No |
700 uV |
25 uA |
Yes |
1 |
85 dB |
SOI-CMOS |
106 dB |
420 μA |
Transconductance |
No |
12 V |
Uncased Chip |
DIE OR CHIP |
42 V |
125 °C (257 °F) |
Yes |
-55 °C (-67 °F) |
Gold |
Upper |
Yes |
R-XUUC-N9 |
Yes |
e4 |
No |
No |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
3 MHz |
Yes |
10000 uV |
No |
2 |
5 mA |
Voltage Feedback |
No |
±5/±15/10/30 V |
SIP9,.06 |
50 pA |
Operational Amplifiers |
13 V/us |
18 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
200 pA |
Yes |
25000 |
-20 °C (-4 °F) |
Single |
No |
No |
No |
10 s |
260 °C (500 °F) |
No |
No |
|||||||||||||||||||||||||||||||
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
No |
1500 uV |
No |
2 |
BIPOLAR |
5.5 mA |
Voltage Feedback |
No |
±2/±7/4/14 V |
SIP9,.1 |
3.5 V/us |
Operational Amplifiers |
7.5 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
200 nA |
Yes |
30000 |
-20 °C (-4 °F) |
Single |
No |
No |
No |
No |
No |
|||||||||||||||||||||||||||||||||||
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
No |
7000 uV |
No |
2 |
BIPOLAR |
1.2 mA |
Voltage Feedback |
No |
±1.5/±15/3/30 V |
SIP9,.1 |
0.3 V/us |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
250 nA |
Yes |
25000 |
-20 °C (-4 °F) |
Tin/Lead |
Single |
No |
No |
Yes |
e0 |
No |
No |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
No Lead |
9 |
DIE |
Rectangular |
75k Rad(Si) |
No |
400 uV |
25 uA |
Yes |
1 |
90 dB |
SOI-CMOS |
MIL-PRF-38535 Class V |
106 dB |
420 μA |
Transconductance |
No |
12 V |
Uncased Chip |
DIE OR CHIP |
42 V |
125 °C (257 °F) |
Yes |
-55 °C (-67 °F) |
Gold |
Upper |
Yes |
R-XUUC-N |
Yes |
Yes |
e4 |
No |
No |
|||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
No |
5000 uV |
No |
2 |
BIPOLAR |
7 mA |
Voltage Feedback |
No |
±2/±7/4/14 V |
SIP9,.1 |
3.5 V/us |
Operational Amplifiers |
7.5 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
400 nA |
Yes |
8000 |
-20 °C (-4 °F) |
Tin Bismuth |
Single |
No |
No |
No |
e6 |
10 s |
260 °C (500 °F) |
No |
No |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
No |
7000 uV |
No |
2 |
BIPOLAR |
1.2 mA |
Voltage Feedback |
No |
±1.5/±15/3/30 V |
SIP9,.1 |
0.3 V/us |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
250 nA |
Yes |
25000 |
-20 °C (-4 °F) |
Tin Bismuth |
Single |
No |
No |
Yes |
e6 |
10 s |
260 °C (500 °F) |
No |
No |
||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
7 MHz |
No |
5000 uV |
No |
2 |
BIPOLAR |
8 mA |
Voltage Feedback |
No |
±4/±15/8/30 V |
SIP9,.06 |
5 V/us |
Operational Amplifiers |
7 V/us |
18 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
400 nA |
Yes |
30000 |
-20 °C (-4 °F) |
Single |
No |
No |
No |
No |
No |
||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
No Lead |
9 |
DIE |
Rectangular |
100k Rad(Si) |
No |
400 uV |
25 uA |
Yes |
1 |
90 dB |
SOI-CMOS |
106 dB |
420 μA |
Transconductance |
No |
12 V |
Uncased Chip |
DIE OR CHIP |
42 V |
125 °C (257 °F) |
Yes |
-55 °C (-67 °F) |
Upper |
Yes |
R-XUUC-N9 |
Yes |
No |
No |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
No Lead |
9 |
DIE |
Rectangular |
No |
700 uV |
25 uA |
Yes |
1 |
85 dB |
SOI-CMOS |
106 dB |
420 μA |
Transconductance |
No |
12 V |
Uncased Chip |
DIE OR CHIP |
42 V |
125 °C (257 °F) |
Yes |
-55 °C (-67 °F) |
Gold |
Upper |
Yes |
R-XUUC-N9 |
Yes |
e4 |
No |
No |
||||||||||||||||||||||||||||||||
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
7 MHz |
No |
5000 uV |
No |
2 |
BIPOLAR |
8 mA |
Voltage Feedback |
No |
±4/±15/8/30 V |
SIP9,.06 |
5 V/us |
Operational Amplifiers |
7 V/us |
18 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
400 nA |
Yes |
30000 |
-20 °C (-4 °F) |
Single |
No |
No |
No |
No |
No |
|||||||||||||||||||||||||||||||||
|
Renesas Electronics |
Operational Amplifier |
No Lead |
9 |
DIE |
Rectangular |
100k Rad(Si) |
No |
400 uV |
25 uA |
Yes |
1 |
90 dB |
SOI-CMOS |
MIL-PRF-38535 Class V |
106 dB |
420 μA |
Transconductance |
No |
12 V |
Uncased Chip |
DIE OR CHIP |
42 V |
125 °C (257 °F) |
Yes |
-55 °C (-67 °F) |
Gold |
Upper |
Yes |
R-XUUC-N |
Yes |
Yes |
e4 |
No |
No |
|||||||||||||||||||||||||||||
Renesas Electronics |
Operational Amplifier |
Commercial Extended |
9 |
Plastic/Epoxy |
No |
5000 uV |
No |
2 |
BIPOLAR |
7 mA |
Voltage Feedback |
No |
±2/±7/4/14 V |
SIP9,.1 |
3.5 V/us |
Operational Amplifiers |
7.5 V |
0.1 in (2.54 mm) |
80 °C (176 °F) |
400 nA |
Yes |
8000 |
-20 °C (-4 °F) |
Tin/Lead |
Single |
No |
No |
No |
e0 |
No |
No |
|||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
7500 uV |
No |
2 |
BIPOLAR |
5.6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
500 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
3 |
No |
e0 |
||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
-16 V |
7000 uV |
300 nA |
No |
2 |
BIPOLAR |
85 dB |
2 mA |
Voltage Feedback |
5 V |
±1.5/±15/3/30 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
150 nA |
Yes |
25000 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
-16 V |
9000 uV |
500 nA |
No |
2 |
BIPOLAR |
80 dB |
2 mA |
Voltage Feedback |
5 V |
±1.5/±15/3/30 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
250 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin/Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
Yes |
5000 uV |
No |
2 |
500 μA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
0.6 V/us |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
Yes |
25000 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
3 |
No |
Yes |
e0 |
|||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Industrial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
-13 V |
10000 uV |
500 nA |
No |
2 |
BIPOLAR |
80 dB |
2 mA |
Voltage Feedback |
5 V |
±1.5/±13/3/26 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
13 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
250 nA |
Yes |
15000 |
-40 °C (-40 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
7500 uV |
No |
2 |
BIPOLAR |
5.6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
500 nA |
Yes |
15000 |
-25 °C (-13 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
|||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
4 MHz |
-18 V |
Yes |
10000 uV |
8 nA |
No |
2 |
BIPOLAR |
100 dB |
6.5 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
4 nA |
Operational Amplifiers |
13 V/us |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
200 pA |
Yes |
15000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
||||||||||||||||||||||
Samsung |
Operational Amplifier |
Industrial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
3 MHz |
-18 V |
7500 uV |
800 nA |
No |
2 |
BIPOLAR |
90 dB |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
1.2 V/us |
Operational Amplifiers |
1.2 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
500 nA |
Yes |
20000 |
-40 °C (-40 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
Yes |
7500 uV |
No |
2 |
500 μA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
0.6 V/us |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
Yes |
15000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
3 |
No |
Yes |
e0 |
|||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
-16 V |
5000 uV |
200 nA |
No |
2 |
BIPOLAR |
85 dB |
2 mA |
Voltage Feedback |
5 V |
±1.5/±15/3/30 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
100 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin/Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
1 MHz |
-20 V |
Yes |
1000 uV |
50 pA |
No |
2 |
BIPOLAR |
100 dB |
500 μA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
0.6 V/us |
Operational Amplifiers |
1 V/us |
20 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
100 pA |
Yes |
25000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
Yes |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
1 MHz |
-18 V |
12000 uV |
1 uA |
No |
2 |
BIPOLAR |
90 dB |
8 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
0.5 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
700 nA |
Yes |
15000 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
7500 uV |
No |
2 |
BIPOLAR |
6.7 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
1 V/us |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
500 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Industrial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
3 MHz |
-22 V |
6000 uV |
1.5 uA |
No |
2 |
BIPOLAR |
90 dB |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
1.2 V/us |
Operational Amplifiers |
1.2 V/us |
22 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
500 nA |
Yes |
25000 |
-40 °C (-40 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
Yes |
1000 uV |
No |
2 |
400 μA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
0.8 V/us |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
Yes |
50000 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
3 |
No |
Yes |
e0 |
|||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
Yes |
5000 uV |
No |
2 |
CMOS |
4 mA |
Voltage Feedback |
No |
5/10 V |
SIP9,.1 |
Operational Amplifiers |
2.3 V/us |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
Yes |
10000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
3 |
No |
No |
e0 |
No |
No |
|||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
Yes |
1000 uV |
No |
2 |
400 μA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
0.8 V/us |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
Yes |
25000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
3 |
No |
Yes |
e0 |
|||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
Yes |
12000 uV |
No |
2 |
CMOS |
4.4 mA |
Voltage Feedback |
No |
5/10 V |
SIP9,.1 |
Operational Amplifiers |
2.3 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
Yes |
7500 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
3 |
No |
No |
e0 |
No |
No |
|||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
5000 uV |
No |
2 |
BIPOLAR |
2 mA |
Voltage Feedback |
±1.5/±15/3/30 V |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
100 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
|||||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
1 MHz |
-18 V |
Yes |
7500 uV |
50 pA |
No |
2 |
BIPOLAR |
95 dB |
500 μA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
0.6 V/us |
Operational Amplifiers |
1 V/us |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
100 pA |
Yes |
15000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
Yes |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
-16 V |
4000 uV |
100 nA |
No |
2 |
BIPOLAR |
85 dB |
2 mA |
Voltage Feedback |
5 V |
±1.5/±15/3/30 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
80 nA |
Yes |
25000 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
6000 uV |
No |
2 |
BIPOLAR |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
1 V/us |
Operational Amplifiers |
22 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
500 nA |
Yes |
25000 |
0 °C (32 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
Yes |
12000 uV |
No |
2 |
CMOS |
4.4 mA |
Voltage Feedback |
No |
5/10 V |
SIP9,.1 |
Operational Amplifiers |
2.3 V/us |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
Yes |
7500 |
-25 °C (-13 °F) |
Tin Lead |
Single |
No |
3 |
No |
No |
e0 |
No |
No |
|||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
6000 uV |
No |
2 |
BIPOLAR |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
SIP9,.1 |
1 V/us |
Operational Amplifiers |
18 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
500 nA |
Yes |
25000 |
-25 °C (-13 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
4000 uV |
No |
2 |
BIPOLAR |
2 mA |
Voltage Feedback |
±1.5/±15/3/30 V |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
80 nA |
Yes |
25000 |
-25 °C (-13 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
|||||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Other |
9 |
Plastic/Epoxy |
7000 uV |
No |
2 |
BIPOLAR |
2 mA |
Voltage Feedback |
±1.5/±15/3/30 V |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
150 nA |
Yes |
25000 |
-25 °C (-13 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
|||||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
Yes |
10000 uV |
No |
2 |
CMOS |
4 mA |
Voltage Feedback |
No |
5/10 V |
SIP9,.1 |
Operational Amplifiers |
2.3 V/us |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
Yes |
10000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
3 |
No |
No |
e0 |
No |
No |
|||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
3 MHz |
-22 V |
6000 uV |
1.5 uA |
No |
2 |
BIPOLAR |
90 dB |
6 mA |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
1.2 V/us |
Operational Amplifiers |
1.2 V/us |
22 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
500 nA |
Yes |
25000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
|||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
9 |
Plastic/Epoxy |
9000 uV |
No |
2 |
BIPOLAR |
2 mA |
Voltage Feedback |
±1.5/±15/3/30 V |
SIP9,.1 |
Operational Amplifiers |
16 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
250 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin/Lead |
Single |
No |
No |
e0 |
|||||||||||||||||||||||||||||||||||||||
Samsung |
Operational Amplifier |
Commercial |
Through-Hole |
9 |
SIP |
Rectangular |
Plastic/Epoxy |
1 MHz |
-18 V |
7500 uV |
800 nA |
No |
2 |
BIPOLAR |
90 dB |
-15 V |
Voltage Feedback |
15 V |
±15 V |
In Line |
SIP9,.1 |
Operational Amplifiers |
0.5 V/us |
18 V |
0.1 in (2.54 mm) |
70 °C (158 °F) |
500 nA |
Yes |
15000 |
0 °C (32 °F) |
Tin Lead |
Single |
No |
R-PSIP-T9 |
0.287 in (7.3 mm) |
0.118 in (3 mm) |
No |
e0 |
0.86 in (21.84 mm) |
Operational amplifiers, or op-amps for short, are electronic circuits that provide a high gain amplification of an input voltage signal. They are widely used in electronic circuits for various signal processing tasks due to their versatile nature and high gain characteristics.
An op-amp typically has two input terminals (inverting and non-inverting), an output terminal, and a power supply. The output voltage of the op-amp is proportional to the difference between the voltages at the two input terminals, with the exact gain being determined by the circuit design.
Op-amps can be used in a variety of electronic circuits such as filters, amplifiers, oscillators, and voltage regulators. They can also be used as comparators, with the output switching to one of two voltage levels depending on the relationship between the two input voltages.
One of the main advantages of op-amps is that they can provide a very high gain, making them useful in amplifying small signals or reducing noise. They also have a wide range of input and output impedance, making them compatible with a wide range of electronic circuits. Additionally, op-amps can be designed to have very high input impedance, which means they can detect and amplify signals with minimal loading effects on the circuit they are connected to.