3 PPM/FIRST YEAR Crystal Oscillators 2,400+

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

FL3840015Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

10 pF

AT-CUT; TR, 7 INCH

40 ohm

10 %

-30 Cel

GOLD OVER NICKEL

e4

38.4 MHz

100 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

85 Cel

FL3840017

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

38.4 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL4000157Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

7 ppm

3 PPM/FIRST YEAR

15 pF

AT-CUT; TR, 7 INCH

40 ohm

10 %

-20 Cel

GOLD OVER NICKEL

e4

40 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

85 Cel

FL400WFMT1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

7 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT; TR, 7 INCH

30 ohm

17 %

-40 Cel

GOLD OVER NICKEL

40 MHz

100 uW

3.2X2.5X0.68 m

100 Cel

FL4910001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

49.1 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

FL5000063Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

40 ohm

30 %

-40 Cel

GOLD OVER NICKEL

e4

50 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

85 Cel

FP0730016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

7.3 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

FP0800046

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

FP2700025

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

27 MHz

10 uW

L7.0XB5.0XH1.0 (mm)/L0.276XB0.197XH0.039 (inch)

FW2500016Z

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

6 pF

AT CUT; TR, 7 INCH

150 ohm

40 %

-30 Cel

25 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

FW260WFMT1

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

7 ppm

3 PPM/FIRST YEAR

12 pF

AT-CUT; TR, 7 INCH

30 ohm

17 %

-40 Cel

26 MHz

100 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

100 Cel

FW4000001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

60 ohm

15 %

-10 Cel

40 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

FX1020008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

10.2 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

FX2000012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

20 MHz

10 uW

L6.0XB3.5XH1.1 (mm)/L0.236XB0.138XH0.043 (inch)

FY1200084

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY1200112

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

LFXTAL054236CUTT

Iqd Frequency Products

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

6 pF

TAPE

80000 ohm

-40 Cel

Gold (Au)

e4

.032768 MHz

1 uW

L3.2XB1.5XH0.9 (mm)/L0.126XB0.059XH0.035 (inch)

85 Cel

MP05348

Golledge Electronics

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

BULK; TR, 13 INCH

70000 ohm

144 %

-40 Cel

.032768 MHz

.1 uW

L3.2XB1.5XH0.9 (mm)/L0.126XB0.059XH0.035 (inch)

85 Cel

MP07244

Golledge Electronics

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

6 pF

50000 ohm

126 %

-40 Cel

.032768 MHz

1 uW

L3.2XB1.5XH0.65 (mm)/L0.126XB0.059XH0.026 (inch)

85 Cel

Q0.032768-JTX520-12.5-20-LF

Jauch Quartz

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TAPE AND REEL

80000 ohm

80 %

-20 Cel

Nickel/Gold (Ni/Au)

e4

.032768 MHz

1 uW

L4.8XB1.9XH1.0 (mm)/L0.189XB0.075XH0.039 (inch)

70 Cel

Q13FC1350000214

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

7 pF

TR, 7 INCH

55000 ohm

144 %

-40 Cel

GOLD

e4

.032768 MHz

.1 uW

L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

85 Cel

Q13FC1350004900

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

6 pF

55000 ohm

144 %

-40 Cel

.032768 MHz

.1 uW

3.2mm x 1.5mm x 0.8mm

85 Cel

Q13MC3062000300

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

35000 ohm

144 %

-40 Cel

TIN

e3

.032768 MHz

1 uW

8.0mm x 3.2mm x 2.54mm

85 Cel

Q13MC3062000600

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

6 pF

35000 ohm

144 %

-40 Cel

TIN

e3

.032768 MHz

1 uW

8mm X 3.8mm X 2.54mm

85 Cel

Q25.0-JXS53-12-30/30-FU-LF

Jauch Quartz

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT; TAPE AND REEL

15 ohm

30 %

-20 Cel

GOLD OVER NICKEL

e4

25 MHz

100 uW

L5.0XB3.2XH0.8 (mm)/L0.197XB0.126XH0.031 (inch)

70 Cel

RSM200S-32.768-6-TR

Raltron Electronics

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

6 pF

TAPE AND REEL

50000 ohm

-40 Cel

Bright Tin (Sn)

e3

.032768 MHz

1 uW

L8.0XB3.8XH2.5 (mm)/L0.315XB0.15XH0.098 (inch)

85 Cel

TFA322PG327KR

Cts

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

AEC-Q200; TR, 7 INCH

70000 ohm

218 %

-40 Cel

.032768 MHz

.5 uW

L3.2XB1.5XH0.9 (mm)/L0.126XB0.059XH0.035 (inch)

105 Cel

TFSM262P32K7680

Cts

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TR, 13 INCH

40000 ohm

42 %

-10 Cel

.032768 MHz

1 uW

2.0mm x 6.0mm

60 Cel

WC315-32.768KHZ-T

Abracon

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TAPE AND REEL

70000 ohm

126 %

-40 Cel

.032768 MHz

1 uW

L3.3XB1.6XH0.9 (mm)/L0.13XB0.063XH0.035 (inch)

85 Cel

X1A000061000800

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

65000 ohm

144 %

-40 Cel

.032768 MHz

.5 uW

2.05mmx1.2mmx0.6mm

85 Cel

X1A000091000500

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

70000 ohm

400 %

-40 Cel

.032768 MHz

.1 uW

3.2mm x 1.5mm x 0.9 mm

125 Cel

X1A000141000500

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

12.5 pF

35000 ohm

144 %

-40 Cel

GOLD OVER NICKEL

e4

.032768 MHz

.1 uW

3.2MM X 1.5MM X 0.8MM

85 Cel

F62500043

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

FY1200101

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

12 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY2000009A

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

20 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FL3200075

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

40 ohm

GOLD OVER NICKEL

e4

32 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

NES5NAD1-50.0000-32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

30 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NES5HAA1-50.0000-32(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

10 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

10 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

FY0800037

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

8 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

FY1430051

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

14.3 MHz

10 uW

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

NES5NEK1-50.0000-08(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

8 pF

AT CUT; MIL-STD-883

40 ohm

50 %

-40 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

85 Cel

FL2400041

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

60 ohm

30 %

-20 Cel

GOLD OVER NICKEL

e4

24 MHz

10 uW

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

70 Cel

NES5JAB1-50.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2NAD1-25.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

30 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; TR

80 ohm

30 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

F91600042Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

16 MHz

10 uW

L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)

GB1220004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

12.2 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

F82500067

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

25 MHz

10 uW

L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)

FF2400016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

3 PPM/FIRST YEAR

AT-CUT; TR

24 MHz

10 uW

L4.0XB2.5XH0.65 (mm)/L0.157XB0.098XH0.026 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance