20 ppm Crystal Oscillators 1,864

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

TFA322PG327KR

Cts

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

AEC-Q200; TR, 7 INCH

70000 ohm

218 %

-40 Cel

.032768 MHz

.5 uW

L3.2XB1.5XH0.9 (mm)/L0.126XB0.059XH0.035 (inch)

105 Cel

TFSM262P32K7680

Cts

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TR, 13 INCH

40000 ohm

42 %

-10 Cel

.032768 MHz

1 uW

2.0mm x 6.0mm

60 Cel

TZ1303A

Tai-saw Technology

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/YEAR

20 pF

TAPE AND REEL

50 ohm

20 %

-20 Cel

6 MHz

100 uW

L11.6XB4.9XH4.3 (mm)/L0.457XB0.193XH0.169 (inch)

TZ1303A

70 Cel

VXM2-1GE-18-14M7456000

Microchip Technology

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

18 pF

TAPE

60 ohm

30 %

-40 Cel

14.7456 MHz

10 uW

L5.0XB3.2XH1.1 (mm)/L0.197XB0.126XH0.043 (inch)

85 Cel

VXM4-1D2-25M0000000

Microchip Technology

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

40 ohm

50 %

-40 Cel

25 MHz

10 uW

L4.0XB2.5XH0.8 (mm)/L0.157XB0.098XH0.031 (inch)

85 Cel

WC315-32.768KHZ-T

Abracon

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TAPE AND REEL

70000 ohm

126 %

-40 Cel

.032768 MHz

1 uW

L3.3XB1.6XH0.9 (mm)/L0.13XB0.063XH0.035 (inch)

85 Cel

X1A000061000800

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

65000 ohm

144 %

-40 Cel

.032768 MHz

.5 uW

2.05mmx1.2mmx0.6mm

85 Cel

X1A000091000500

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

70000 ohm

400 %

-40 Cel

.032768 MHz

.1 uW

3.2mm x 1.5mm x 0.9 mm

125 Cel

X3215-32.768K-12.5P

Mercury Electronic Industrial

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/YEAR

12.5 pF

X-CUT; TR, 7 INCH

65000 ohm

144 %

-40 Cel

.032768 MHz

.1 uW

L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

85 Cel

XRCFD25M000F2N51R0

Murata Manufacturing

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

2 PPM/YEAR

5 pF

TR, PLASTIC, 7 INCH

300 ohm

50 %

-40 Cel

25 MHz

30 uW

L1.6XB1.2XH0.35 (mm)/L0.063XB0.047XH0.014 (inch)

125 Cel

XRCGB26M000F2P01R0

Murata Manufacturing

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/YEAR

8 pF

TR, PLASTIC, 7 INCH

150 ohm

20 %

-30 Cel

26 MHz

150 uW

L2.0XB1.6XH0.65 (mm)/L0.079XB0.063XH0.026 (inch)

85 Cel

XRCGB32M000F2P02R0

Murata Manufacturing

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/YEAR

10 pF

TR, PLASTIC, 7 INCH

100 ohm

20 %

-30 Cel

32 MHz

150 uW

L2.0XB1.6XH0.65 (mm)/L0.079XB0.063XH0.026 (inch)

85 Cel

XRCPB24M000F2P00R0

Murata Manufacturing

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/YEAR

6 pF

TR, PLASTIC, 7 INCH

150 ohm

20 %

-30 Cel

24 MHz

150 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

85 Cel

NES5JAB1-50.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2JAB1-40.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

40 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-33.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

33 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-66.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

NKS2JAB1-38.4000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

38.4 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-24.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5JAB1-08.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

8 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2JAB1-24.5760-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5JAB1-50.0000-32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2JAB1-27.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

27 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-66.0000-16(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

NKS2JAB1-20.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

20 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-32.7680-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

32.768 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-25.0000-16

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

16 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

NKS2JAB1-66.0000-32(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

66 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

FY1200011

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

60 ohm

30 %

-20 Cel

12 MHz

10 uW

L5.0XB3.2XH0.95 (mm)/L0.197XB0.126XH0.037 (inch)

70 Cel

NKS2JAB1-52.0000-12(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; TR

60 ohm

20 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-25.0000-32

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

25 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

G33270007

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

X CUT; TR, 13 INCH

50000 ohm

126 %

-40 Cel

.032768 MHz

1 uW

85 Cel

G93270004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

TR, 7 INCH

90000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L2.0XB1.2XH0.6 (mm)/L0.079XB0.047XH0.024 (inch)

85 Cel

G23270023

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

X CUT; BAG

35000 ohm

49 %

-10 Cel

.032768 MHz

1 uW

D2.0XH6.0 (mm)/D0.079XH0.236 (inch)

60 Cel

FQ2400005

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

18 pF

AT CUT; TR, 7 INCH

60 ohm

30 %

-40 Cel

24 MHz

10 uW

L3.2XB2.5XH0.75 (mm)/L0.126XB0.098XH0.03 (inch)

85 Cel

NKS2JAB1-26.0000-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

26 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5JAB1-50.0000-32(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

32 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

G23270013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

5 PPM/YEAR

12.5 pF

40000 ohm

43 %

-10 Cel

Tin/Lead (Sn/Pb)

e0

.032768 MHz

1 uW

D2.0XH6.3 (mm)/D0.079XH0.248 (inch)

60 Cel

G93270001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

9 pF

TR, 7 INCH

90000 ohm

108 %

-40 Cel

.032768 MHz

.1 uW

L2.0XB1.2XH0.6 (mm)/L0.079XB0.047XH0.024 (inch)

85 Cel

NKS2JAB1-24.5760-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR

80 ohm

20 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NES5JAB1-50.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; MIL-STD-883

40 ohm

20 %

-20 Cel

50 MHz

10 uW

5mm x 3.2mm x 0.9mm

70 Cel

NKS2JAB1-24.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

24 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

NKS2JAB1-24.5760-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

80 ohm

20 %

-20 Cel

24.576 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

F61200047

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT; TR, 7 INCH

60 ohm

20 %

-20 Cel

12 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

70 Cel

NKS2JAB1-52.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

52 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

G23270006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

3 PPM/FIRST YEAR

6 pF

X CUT; BAG

40000 ohm

43 %

-10 Cel

.032768 MHz

1 uW

D2.0XH6.0 (mm)/D0.079XH0.236 (inch)

60 Cel

NKS2JAB1-12.0000-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT; BULK

150 ohm

20 %

-20 Cel

12 MHz

10 uW

L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)

70 Cel

NKS2JAB1-54.0000-12

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

20 ppm

5 PPM/FIRST YEAR

12 pF

AT CUT; BULK

60 ohm

20 %

-20 Cel

54 MHz

10 uW

L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)

70 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance