30 ppm Crystal Oscillators 2,384

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Minimum Operating Frequency	Maximum Operating Frequency	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Nominal Operating Frequency	Drive Level	Physical Dimension	Manufacturer Series	Maximum Operating Temperature
XT9M20ANA18M432	Vishay Intertechnology	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/YEAR	20 pF	AT-CUT; BULK	50 ohm	50 %	-10 Cel			18.432 MHz	100 uW	L11.1XB4.7XH4.5 (mm)/L0.437XB0.185XH0.177 (inch)		70 Cel
XT9M20ANA20M	Vishay Intertechnology	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/YEAR	20 pF	AT CUT; BULK	50 ohm	50 %	-10 Cel	Tin/Copper (Sn/Cu)	e2	20 MHz	100 uW	L11.1XB4.7XH4.5 (mm)/L0.437XB0.185XH0.177 (inch)		70 Cel
XT9M20ANA3M579545	Vishay Intertechnology	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/ YEAR	20 pF	AT CUT	200 ohm	50 %	-10 Cel	Tin/Copper (Sn/Cu)	e2	3.579545 MHz	100 uW	11.1mm X 4.7mm X 4.5mm		70 Cel
XT9S20ANA12M	Vishay Intertechnology	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT-CUT; BULK	80 ohm	50 %	-10 Cel	Tin/Copper (Sn/Cu)	e2	12 MHz	100 uW	L11.05XB4.65XH3.5 (mm)/L0.435XB0.183XH0.138 (inch)		70 Cel
XT9S20ANA14M7456	Vishay Intertechnology	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT-CUT; BULK	50 ohm	50 %	-10 Cel	Tin/Copper (Sn/Cu)	e2	14.7456 MHz	100 uW	L11.05XB4.65XH3.5 (mm)/L0.435XB0.183XH0.138 (inch)		70 Cel
XT9SNLANA16M	Vishay Intertechnology	SERIES - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			5 PPM/FIRST YEAR		AT-CUT; BULK	50 ohm	50 %	-10 Cel	Tin/Copper (Sn/Cu)	e2	16 MHz	100 uW	L11.05XB4.65XH3.5 (mm)/L0.435XB0.183XH0.138 (inch)		70 Cel
NES5NAD1-50.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NES5NEK1-50.0000-08(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
FL2400041	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	60 ohm	30 %	-20 Cel	GOLD OVER NICKEL	e4	24 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)		70 Cel
NKS2NAD1-25.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; TR	80 ohm	30 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
NKS2NED1-40.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-40 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB1220004	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12.2 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES7NED-FREQ-32(T)	Diodes Incorporated	PARALLEL - 3RD OVERTONE	SURFACE MOUNT	30 ppm	30 MHz	56 MHz		32 pF	TAPE AND REEL; AT-CUT CRYSTAL	80 ohm	30 %	-40 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	85 Cel
FW3200020	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	10 pF	AT CUT; TR, 7 INCH	50 ohm	30 %	-40 Cel			32 MHz	10 uW	L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)		85 Cel
NKS2NAK1-40.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			40 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NED1-52.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-40 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NAK1-38.4000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	50 %	-20 Cel			38.4 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAK1-54.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-20 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NAD1-20.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	30 %	-20 Cel			20 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
FL2400081	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	60 ohm	30 %	-20 Cel	GOLD OVER NICKEL	e4	24 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)		70 Cel
NKS2NAK1-25.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	20 pF	AT CUT; BULK	80 ohm	50 %	-20 Cel			25 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		70 Cel
GB1200038	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES5NAD1-50.0000-08(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NKS2NEK1-54.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	60 ohm	50 %	-40 Cel			54 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
GB2400008	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						24 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES7NEK1-FREQ-8(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm	6 MHz	56 MHz		8 pF	TAPE AND REEL; AT-CUT CRYSTAL	110 ohm	50 %	-40 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	85 Cel
NKS2NED1-12.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; TR	150 ohm	30 %	-40 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NKS2NED1-25.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			25 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NEK1-32.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			32 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NES5NEK1-50.0000-08	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-40 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NAD1-30.0000-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			30 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NED1-24.5760-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	80 ohm	30 %	-40 Cel			24.576 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
49SMLB25.0000-16GGC-E	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	16 pF	AT CUT; BULK	30 ohm	30 %	-20 Cel			25 MHz	100 uW	L11.5XB4.8XH4.0 (mm)/L0.453XB0.189XH0.157 (inch)		70 Cel
GG1300009	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						13 MHz	100 uW	L11.2XB5.0XH2.5 (mm)/L0.441XB0.197XH0.098 (inch)
FL2400135Z	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	18 pF	AT-CUT; TR, 7 INCH	50 ohm	30 %	-40 Cel	GOLD OVER NICKEL	e4	24 MHz	10 uW	L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)		85 Cel
NES7NAD1-FREQ-(T)	Diodes Incorporated	SERIES - FUNDAMENTAL	SURFACE MOUNT	30 ppm	6 MHz	56 MHz			TAPE AND REEL; AT-CUT CRYSTAL	110 ohm	30 %	-20 Cel	Gold (Au)	e4		500 uW	L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)	NES7	70 Cel
NKS2NEK1-32.7680-12(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; TR	60 ohm	50 %	-40 Cel			32.768 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel
NKS2NAD1-52.0000-20(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; TR	60 ohm	30 %	-20 Cel			52 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NKS2NEK1-12.0000-16(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; TR	150 ohm	50 %	-40 Cel			12 MHz	10 uW	L2.5XB2.0XH0.6 (mm)/L0.098XB0.079XH0.024 (inch)		85 Cel
NES5NAK1-50.0000-08	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	8 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			50 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
GB1600048	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						16 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB1200050	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						12 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
GB0930002	Diodes Incorporated	PARALLEL - FUNDAMENTAL	THROUGH HOLE MOUNT	30 ppm			3 PPM/FIRST YEAR		AT-CUT						9.3 MHz	100 uW	L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)
NES5NAK1-08.0000-16	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	16 pF	AT CUT; MIL-STD-883	40 ohm	50 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NES5NAD1-08.0000-32	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-20 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		70 Cel
NKS2NAD1-48.0000-20	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	20 pF	AT CUT; BULK	60 ohm	30 %	-20 Cel			48 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		70 Cel
NES5NED1-08.0000-32(T)	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			3 PPM/FIRST YEAR	32 pF	AT CUT; MIL-STD-883	40 ohm	30 %	-40 Cel			8 MHz	10 uW	5mm x 3.2mm x 0.9mm		85 Cel
NKS2NED1-24.0000-12	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	30 ppm			5 PPM/FIRST YEAR	12 pF	AT CUT; BULK	80 ohm	30 %	-40 Cel			24 MHz	10 uW	L2.5XB2.0XH0.55 (mm)/L0.098XB0.079XH0.022 (inch)		85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance