50 ppm Crystal Oscillators 928

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Part	Manufacturer	Crystal or Resonator Type	Mounting Feature	Frequency Tolerance	Aging	Load Capacitance	Additional Features	Series Resistance	Frequency Stability	Minimum Operating Temperature	Nominal Operating Frequency	Drive Level	Physical Dimension	Maximum Operating Temperature
XR32H9K031.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	100 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32J9J019.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	100 ohm	70 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32L9K020.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	12 pF	AT CUT	60 ohm	100 %	-40 Cel	20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR20L9I066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	12 pF	AT CUT	60 ohm	50 %	-40 Cel	66 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR20T9H059.999980F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	80 ohm	50 %	-40 Cel	59.999 MHz	10 uW	2mm x 1.6mm x 0.45mm	105 Cel
XR32H9I019.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	100 ohm	50 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9E012.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	100 ohm	30 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR32T9J019.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	100 ohm	70 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32L9H019.999960F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	12 pF	AT CUT	100 ohm	50 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
XR32T9E012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	100 ohm	30 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR20H9J030.000080F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	80 ohm	70 %	-40 Cel	30 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR20J9J024.0000A2F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	120 ohm	70 %	-40 Cel	24 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR32H9J012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	100 ohm	70 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32L9J031.999960F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	12 pF	AT CUT	60 ohm	70 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32T9H031.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	60 ohm	50 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
XR32T9K032.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	40 ohm	100 %	-40 Cel	32 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9E031.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	30 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR20H9K029.9999A2F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	120 ohm	100 %	-40 Cel	29.999 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR32T9I019.999940F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	100 ohm	50 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR20T9J024.0000A2F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	120 ohm	70 %	-40 Cel	24 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR32J9J020.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	70 %	-40 Cel	20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9J012.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	100 ohm	70 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32P9J012.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT	100 ohm	70 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32T9H066.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	40 ohm	50 %	-40 Cel	66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
XR32H9H012.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	100 ohm	50 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
XR32T9E020.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	60 ohm	30 %	-40 Cel	20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR32P9H019.999940F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT	100 ohm	50 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
XR32H9K066.000040F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	40 ohm	100 %	-40 Cel	66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32T9E066.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	40 ohm	30 %	-40 Cel	66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR32T9I066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	40 ohm	50 %	-40 Cel	66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32P9E012.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT	100 ohm	30 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR32H9K020.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	100 %	-40 Cel	20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9K031.999960F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	100 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32J9H019.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	100 ohm	50 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	105 Cel
XR32P9K031.999940F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT	60 ohm	100 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR20L9K030.000080F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	12 pF	AT CUT	80 ohm	100 %	-40 Cel	30 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR32T9J012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	100 ohm	70 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9K032.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	40 ohm	100 %	-40 Cel	32 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9I066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	40 ohm	50 %	-40 Cel	66 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR20H9J066.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	70 %	-40 Cel	66 MHz	10 uW	2mm x 1.6mm x 0.45mm	125 Cel
XR32T9K031.999940F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	60 ohm	100 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32J9J012.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	100 ohm	70 %	-40 Cel	12 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32J9J031.999960F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	10 pF	AT CUT	60 ohm	70 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR20H9E024.0000A2F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	120 ohm	30 %	-40 Cel	24 MHz	10 uW	2mm x 1.6mm x 0.45mm	85 Cel
XR32P9E032.0000A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	16 pF	AT CUT	40 ohm	30 %	-40 Cel	32 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	85 Cel
XR32H9J031.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	70 %	-40 Cel	31.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32T9I019.9999A0F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	20 pF	AT CUT	100 ohm	50 %	-40 Cel	19.9999 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel
XR32H9J020.000060F	Diodes Incorporated	PARALLEL - FUNDAMENTAL	SURFACE MOUNT	50 ppm	3 PPM/FIRST YEAR	8 pF	AT CUT	60 ohm	70 %	-40 Cel	20 MHz	10 uW	3.2mm x 2.5mm x 0.68mm	125 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance