50 ppm Crystal Oscillators 928

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

LFXTAL061076REEL

Iqd Frequency Products

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/YEAR

18 pF

TR

40 ohm

50 %

-40 Cel

8 MHz

500 uW

L11.4XB4.9XH4.3 (mm)/L0.449XB0.193XH0.169 (inch)

85 Cel

LFXTAL065342REEL

Iqd Frequency Products

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/YEAR

30 pF

TR

80 ohm

50 %

-40 Cel

8 MHz

100 uW

L7.2XB5.2XH1.4 (mm)/L0.283XB0.205XH0.055 (inch)

85 Cel

LFXTAL071774REEL

Iqd Frequency Products

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/YEAR

8 pF

AEC-Q200; TR

200 ohm

100 %

-40 Cel

12 MHz

50 uW

L3.2XB2.5XH0.8 (mm)/L0.126XB0.098XH0.031 (inch)

85 Cel

LFXTAL071788CUTT

Iqd Frequency Products

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/YEAR

8 pF

AEC-Q200 QUALIFIED; TAPE

50 ohm

100 %

-40 Cel

26 MHz

50 uW

L3.2XB2.5XH0.8 (mm)/L0.126XB0.098XH0.031 (inch)

125 Cel

LFXTAL072352CUTT

Iqd Frequency Products

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/YEAR

18 pF

AEC-Q200 QUALIFIED; TAPE

150 ohm

100 %

-40 Cel

8 MHz

50 uW

L7.0XB5.0XH1.2 (mm)/L0.276XB0.197XH0.047 (inch)

125 Cel

NX5032GA-12.000M-LN-CD-1

Nihon Dempa Kogyo

SERIES - FUNDAMENTAL

SURFACE MOUNT

50 ppm

120 ohm

50 %

-10 Cel

12 MHz

50 uW

L5.0XB3.2XH1.3 (mm)/L0.197XB0.126XH0.051 (inch)

70 Cel

NX5032GA-16.000M-LN-CD-1

Nihon Dempa Kogyo

SERIES - FUNDAMENTAL

SURFACE MOUNT

50 ppm

120 ohm

50 %

-10 Cel

16 MHz

50 uW

L5.0XB3.2XH1.3 (mm)/L0.197XB0.126XH0.051 (inch)

70 Cel

NX5032GA-25.000M-LN-CD-1

Nihon Dempa Kogyo

SERIES - FUNDAMENTAL

SURFACE MOUNT

50 ppm

70 ohm

50 %

-10 Cel

25 MHz

50 uW

L5.0XB3.2XH1.3 (mm)/L0.197XB0.126XH0.051 (inch)

70 Cel

Q22FA2380000112

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

12 pF

60 ohm

30 %

-20 Cel

20 MHz

10 uW

3.2mm x 2.5mm x 0.7mm

70 Cel

Q22FA2380040512

Seiko Epson

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

10 pF

40 ohm

50 %

-20 Cel

40 MHz

10 uW

3.2mm x 2.5mm x 0.7mm

70 Cel

SM10T-18-16.0M-50H1LK

Pletronics

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

18 pF

AT CUT; MIL-STD-883

60 ohm

30 %

-40 Cel

GOLD OVER NICKEL

e4

16 MHz

100 uW

3.2mm x 2.5mm x 0.8mm

85 Cel

XRCGB48M000F5A00R0

Murata Manufacturing

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

2 PPM/YEAR

6 pF

TR, PLASTIC, 7 INCH

60 ohm

65 %

-40 Cel

48 MHz

150 uW

L2.0XB1.6XH0.65 (mm)/L0.079XB0.063XH0.026 (inch)

125 Cel

XT9M20ANA4M

Vishay Intertechnology

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/YEAR

20 pF

AT-CUT

150 ohm

50 %

-20 Cel

Tin/Copper (Sn/Cu)

e2

4 MHz

100 uW

11.4mm X 4.7mm X 4.5mm

70 Cel

XT9S20ANA4M

Vishay Intertechnology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT CRYSTAL; BULK PACKAGE

150 ohm

50 %

-20 Cel

Tin/Copper (Sn/Cu)

e2

4 MHz

100 uW

L10.24XB3.7XH3.5 (mm)/L0.403XB0.146XH0.138 (inch)

XT49S

70 Cel

49SMLB24.5760-20-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

BT CUT; TAPE AND REEL

30 ohm

100 %

-20 Cel

24.576 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

49SMLB04.9152

Diodes Incorporated

SERIES - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

AT-CUT; BULK

20 ohm

100 %

-20 Cel

4.9152 MHz

100 uW

70 Cel

FW2400001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT; TR, 7 INCH

70 ohm

50 %

-20 Cel

24 MHz

10 uW

L2.0XB1.6XH0.45 (mm)/L0.079XB0.063XH0.018 (inch)

70 Cel

49SMLB12.5830-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

BT CUT; TAPE AND REEL

60 ohm

100 %

-20 Cel

12.583 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

FW3200008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

AT-CUT

100 ohm

50 %

-30 Cel

32 MHz

10 uW

L2.05XB1.65XH0.45 (mm)/L0.081XB0.065XH0.018 (inch)

85 Cel

49SAB30.0000-12HHE

Diodes Incorporated

PARALLEL - 3RD OVERTONE

SURFACE MOUNT

50 ppm

12 pF

AT-CUT; BULK

80 ohm

50 %

-40 Cel

Tin/Lead (Sn/Pb)

e0

30 MHz

100 uW

L12.0XB5.0XH5.2 (mm)/L0.472XB0.197XH0.205 (inch)

90 Cel

49SMLB200-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

20 pF

AT CUT CRYSTAL

50 %

-20 Cel

Tin/Lead (Sn/Pb)

e0

20 MHz

25 uW

L12XB5XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

F90800018Q

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

8 pF

AT-CUT; TR, 7 INCH

120 ohm

50 %

-40 Cel

8 MHz

10 uW

L5.0XB3.2XH1.2 (mm)/L0.197XB0.126XH0.047 (inch)

125 Cel

49SMLB11.0592-20-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

BT CUT; TAPE AND REEL

60 ohm

100 %

-20 Cel

11.0592 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

49SMLB245-20-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT; TR

30 ohm

50 %

-20 Cel

24.576 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

70 Cel

49SMLB240-20(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

20 pF

AT CUT CRYSTAL

50 %

-20 Cel

Tin/Lead (Sn/Pb)

e0

24 MHz

25 uW

L12XB5XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

49SNC200-20-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

20 pF

AT CUT; TEMPERATURE -40 TO 85 ALSO AVAILABLE

30 ohm

50 %

-20 Cel

20 MHz

25 uW

13.3mm x 5.5mm x 5.2mm

70 Cel

49SMLB25.0000-18HJE(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

18 pF

AT CUT; TAPE AND REEL

30 ohm

100 %

-40 Cel

25 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

85 Cel

F80800016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

8 pF

AT CUT; TR, 7 INCH

200 ohm

50 %

-20 Cel

8 MHz

10 uW

L8.0XB4.5XH1.4 (mm)/L0.315XB0.177XH0.055 (inch)

70 Cel

49SMLB20.0000-30HJE-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

30 pF

AT-CUT; BULK

20 ohm

100 %

-40 Cel

20 MHz

100 uW

85 Cel

49SNC200-18-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

18 pF

AT-CUT CRYSTAL; BULK

30 ohm

50 %

-20 Cel

Matte Tin (Sn)

e3

20 MHz

100 uW

L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)

70 Cel

49SMLB20.0000-20T

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

BT CUT

30 ohm

100 %

-20 Cel

20 MHz

100 uW

11.5mm x 4.8mm x 4mm

70 Cel

49SMLB250-20-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT; TR

30 ohm

50 %

-20 Cel

25 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

70 Cel

49SNC04.0000-16HJE-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

16 pF

AT CUT

150 ohm

100 %

-40 Cel

4 MHz

100 uW

11.5mm x 4.8mm x 4mm

85 Cel

49SMLB143-20-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT; TR

40 ohm

50 %

-20 Cel

14.31818 MHz

100 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

70 Cel

GC1600063

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

30 pF

AT-CUT

40 ohm

100 %

-40 Cel

16 MHz

500 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

85 Cel

FP0800018

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

80 ohm

50 %

-20 Cel

8 MHz

10 uW

L7.0XB5.0XH1.1 (mm)/L0.276XB0.197XH0.043 (inch)

70 Cel

49SMLB200-20

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

20 pF

AT CUT CRYSTAL

50 %

-20 Cel

Tin/Lead (Sn/Pb)

e0

20 MHz

25 uW

L12XB5XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

GC2400043

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

18 pF

AT-CUT; TR

50 ohm

100 %

0 Cel

24 MHz

750 uW

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

70 Cel

49SNC03.6864-20HJE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT

180 ohm

100 %

-40 Cel

3.6864 MHz

100 uW

11.5mm x 4.8mm x 4mm

85 Cel

49SMLB111-20-E

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

20 pF

AT CUT; BULK

60 ohm

50 %

-20 Cel

11.0592 MHz

100 uW

L12.0XB5.0XH4.3 (mm)/L0.472XB0.197XH0.169 (inch)

70 Cel

49SNC04.0000-16HJE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

16 pF

AT CUT

150 ohm

100 %

-40 Cel

4 MHz

100 uW

11.5mm x 4.8mm x 4mm

85 Cel

FL1600097

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

5 PPM/FIRST YEAR

16 pF

AT CUT

80 ohm

50 %

-20 Cel

16 MHz

10 uW

3.2mm X 2.5mm X 0.65mm

70 Cel

F62700016

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

3 PPM/FIRST YEAR

18 pF

AT-CUT; TR, 7 INCH

50 ohm

50 %

-40 Cel

27 MHz

10 uW

L6.0XB3.5XH1.2 (mm)/L0.236XB0.138XH0.047 (inch)

85 Cel

49SNC20.0000-22HHE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

22 pF

AT-CUT; TR

30 ohm

50 %

-40 Cel

20 MHz

500 uW

L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)

90 Cel

49SNC07.6800-16HJE-E(T)

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

16 pF

AT-CUT; TR

100 %

-40 Cel

7.68 MHz

500 uW

L13.3XB5.5XH5.2 (mm)/L0.524XB0.217XH0.205 (inch)

85 Cel

XR32J9E031.9999A0F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

3 PPM/FIRST YEAR

10 pF

AT CUT

60 ohm

30 %

-40 Cel

31.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

85 Cel

XR32T9J019.999960F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

3 PPM/FIRST YEAR

20 pF

AT CUT

100 ohm

70 %

-40 Cel

19.9999 MHz

10 uW

3.2mm x 2.5mm x 0.68mm

125 Cel

XR20L9E059.999980F

Diodes Incorporated

PARALLEL - FUNDAMENTAL

SURFACE MOUNT

50 ppm

3 PPM/FIRST YEAR

12 pF

AT CUT

80 ohm

30 %

-40 Cel

59.999 MHz

10 uW

2mm x 1.6mm x 0.45mm

85 Cel

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance