THROUGH HOLE MOUNT Crystal Oscillators 462

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Part RoHS Manufacturer Crystal or Resonator Type Mounting Feature Frequency Tolerance Minimum Operating Frequency Maximum Operating Frequency Aging Load Capacitance Additional Features Series Resistance Frequency Stability Minimum Operating Temperature Terminal Finish JESD-609 Code Nominal Operating Frequency Drive Level Physical Dimension Manufacturer Series Maximum Operating Temperature

MP092B

Cts

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/YEAR

18 pF

AT CUT; BULK

35 ohm

50 %

-20 Cel

TIN SILVER COPPER

e1

9.216 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

70 Cel

MP110B

Cts

SERIES - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/YEAR

AT CUT; BULK

30 ohm

50 %

-20 Cel

TIN SILVER COPPER

e1

11 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

70 Cel

MP160A-E

Cts

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/YEAR

20 pF

AT CUT; BULK

25 ohm

50 %

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

e1

16 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

85 Cel

MP184B

Cts

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/YEAR

18 pF

AT CUT; BULK

25 ohm

50 %

-20 Cel

TIN SILVER COPPER

e1

18.432 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

70 Cel

MP240

Cts

SERIES - FUNDAMENTAL

THROUGH HOLE MOUNT

45 ppm

AT-CUT CRYSTAL; BULK

35 ohm

50 %

-20 Cel

TIN SILVER COPPER

e1

24 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

70 Cel

MP245B

Cts

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/YEAR

18 pF

AT CUT; BULK

25 ohm

50 %

-20 Cel

TIN SILVER COPPER

e1

24.576 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

70 Cel

MP320B-E

Cts

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

5 PPM/YEAR

18 pF

AT CUT; BULK

25 ohm

50 %

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

e1

32 MHz

100 uW

L10.85XB4.5XH13.46 (mm)/L0.427XB0.177XH0.53 (inch)

85 Cel

NC38-32.768KHZ

Fox Electronics

SERIES - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

12.5 pF

35000 ohm

49 %

-20 Cel

Tin/Lead (Sn/Pb)

e0

.032768 MHz

D3.0XH8.3 (mm)/D0.118XH0.327 (inch)

60 Cel

QCL16.0000F18B23B

Qantek Technology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

3 PM/YEAR

18 pF

AT CUT

30 ohm

30 %

-40 Cel

16 MHz

100 uW

11.05mm x 4.65mm x 3.5mm

85 Cel

R26-32.768-6

Raltron Electronics

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

5 PPM/FIRST YEAR

6 pF

35000 ohm

122 %

-40 Cel

.032768 MHz

1 uW

D2.1XH6.2 (mm)/D0.083XH0.244 (inch)

85 Cel

VXA4-1D2-8M00000000

Microchip Technology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

10 ppm

5 PPM/FIRST YEAR

20 pF

60 ohm

50 %

-40 Cel

8 MHz

10 uW

10.85mm x 4.5mm x 3.51mm

85 Cel

VXA4-1F4-27M0000000

Microchip Technology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

10 ppm

5 PPM/FIRST YEAR

18 pF

30 ohm

30 %

-20 Cel

27 MHz

10 uW

10.85mm x 4.5mm x 3.51mm

70 Cel

VXD1-3A6-71M0375000

Microchip Technology

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

10 ppm

5 PPM/FIRST YEAR

30 pF

40 ohm

100 %

-20 Cel

71.0375 MHz

10 uW

L7.9XB3.2XH8.1 (mm)/L0.311XB0.126XH0.319 (inch)

70 Cel

X3M686400L005

Abracon

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

30 pF

90 ohm

50 %

-20 Cel

3.6864 MHz

70 Cel

XT9S20ANA12M

Vishay Intertechnology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT; BULK

80 ohm

50 %

-10 Cel

Tin/Copper (Sn/Cu)

e2

12 MHz

100 uW

L11.05XB4.65XH3.5 (mm)/L0.435XB0.183XH0.138 (inch)

70 Cel

XT9S20ANA14M7456

Vishay Intertechnology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/FIRST YEAR

20 pF

AT-CUT; BULK

50 ohm

50 %

-10 Cel

Tin/Copper (Sn/Cu)

e2

14.7456 MHz

100 uW

L11.05XB4.65XH3.5 (mm)/L0.435XB0.183XH0.138 (inch)

70 Cel

XT9S20ANA4M

Vishay Intertechnology

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

50 ppm

5 PPM/FIRST YEAR

20 pF

AT CUT CRYSTAL; BULK PACKAGE

150 ohm

50 %

-20 Cel

Tin/Copper (Sn/Cu)

e2

4 MHz

100 uW

L10.24XB3.7XH3.5 (mm)/L0.403XB0.146XH0.138 (inch)

XT49S

70 Cel

XT9SNLANA16M

Vishay Intertechnology

SERIES - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

5 PPM/FIRST YEAR

AT-CUT; BULK

50 ohm

50 %

-10 Cel

Tin/Copper (Sn/Cu)

e2

16 MHz

100 uW

L11.05XB4.65XH3.5 (mm)/L0.435XB0.183XH0.138 (inch)

70 Cel

GB1220004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

12.2 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB1200038

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

12 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB2400008

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

24 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GG1300009

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

13 MHz

100 uW

L11.2XB5.0XH2.5 (mm)/L0.441XB0.197XH0.098 (inch)

GB1600048

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

16 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB1200050

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

12 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB0930002

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

9.3 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB1200036

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

30 pF

AT CUT; BAG

40 ohm

30 %

-10 Cel

12 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

70 Cel

GB0800009

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

8 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GA2700010

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

27 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GA1350003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

13.5 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GA0730003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

7.3 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GB2400038

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

24 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB2500011

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GA0300004

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

30 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GA0800012

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

8 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

G23270023

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

3 PPM/FIRST YEAR

12.5 pF

X CUT; BAG

35000 ohm

49 %

-10 Cel

.032768 MHz

1 uW

D2.0XH6.0 (mm)/D0.079XH0.236 (inch)

60 Cel

GB0400023

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

4 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GA0440002

Diodes Incorporated

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

44 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GB2500117

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GA5000003

Diodes Incorporated

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

50 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GB2500028

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

G23270013

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

20 ppm

5 PPM/YEAR

12.5 pF

40000 ohm

43 %

-10 Cel

Tin/Lead (Sn/Pb)

e0

.032768 MHz

1 uW

D2.0XH6.3 (mm)/D0.079XH0.248 (inch)

60 Cel

GA1570001

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

15.7 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GB2500039

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GA2500015

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB4.8XH13.5 (mm)/L0.441XB0.189XH0.531 (inch)

GB4800024

Diodes Incorporated

PARALLEL - 3RD OVERTONE

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

48 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB2700006

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

27 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB1020003

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

10.2 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

GB2500072

Diodes Incorporated

PARALLEL - FUNDAMENTAL

THROUGH HOLE MOUNT

30 ppm

3 PPM/FIRST YEAR

AT-CUT

25 MHz

100 uW

L11.2XB5.0XH3.5 (mm)/L0.441XB0.197XH0.138 (inch)

Crystal Oscillators

Crystal oscillators are electronic components that generate stable and precise frequency signals for various applications. They are widely used in electronic devices and systems that require a precise frequency source, such as clocks, radios, and telecommunications equipment.

Crystal oscillators consist of a quartz crystal resonator, which is cut to vibrate at a specific frequency when an AC voltage is applied across it. The resonance frequency is determined by the dimensions of the crystal and the properties of the quartz material, which have a high Q-factor and temperature stability. The crystal resonator is connected to an amplifier circuit that provides feedback and controls the frequency of the output signal.

Crystal oscillators offer several advantages over other types of frequency sources, including high accuracy, stability, and low phase noise. They can operate at a wide range of frequencies, ranging from a few kilohertz to several gigahertz, and they are available in different package sizes and configurations, including through-hole and surface-mount.

Crystal oscillators come in different types, such as Pierce, Colpitts, and Butler, each with different characteristics and performance levels. They are also available in different tolerances and stability levels, depending on the application and the required performance