RECTIFIER DIODE Bridge Rectifier Diodes 8

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Additional Features No. of Phases JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Reference Standard

M50100SB1200

Crydom

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

BRIDGE, 4 ELEMENTS

100 A

1.2 V

4

FLANGE MOUNT

Bridge Rectifier Diodes

1200 V

125 Cel

-40 Cel

TIN

R-XUFM-X4

ISOLATED

Not Qualified

1

1500 A

e3

SILICON

UL RECOGNIZED

M50100TB1200

Crydom

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

BRIDGE, 4 ELEMENTS

100 A

1.2 V

4

FLANGE MOUNT

Bridge Rectifier Diodes

1200 V

125 Cel

-40 Cel

TIN

R-XUFM-X4

ISOLATED

Not Qualified

1

1500 A

e3

SILICON

UL RECOGNIZED

MD100S16M2-BP

Micro Commercial Components

RECTIFIER DIODE

UPPER

UNSPECIFIED

5

NO

RECTANGULAR

CERAMIC, GLASS-SEALED

BRIDGE, 6 ELEMENTS

100 A

1.9 V

300 uA

6

1600 V

FLANGE MOUNT

1600 V

150 Cel

-40 Cel

SILVER

R-CUFM-X5

3

1600 V

920 A

e4

10

260

SILICON

KBJ2006G-TU

Diodes Incorporated

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

4

NO

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

20 A

1.1 V

5 uA

4

600 V

FLANGE MOUNT

600 V

150 Cel

-55 Cel

MATTE TIN

R-PSFM-T4

1

600 V

200 A

e3

260

SILICON

UL RECOGNIZED

KBJ2008G-TU

Diodes Incorporated

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

4

NO

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

20 A

1.1 V

5 uA

4

800 V

FLANGE MOUNT

800 V

150 Cel

-55 Cel

MATTE TIN

R-PSFM-T4

1

800 V

200 A

e3

260

SILICON

UL RECOGNIZED

GBU808_HF

Diodes Incorporated

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

4

NO

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

3.2 A

1.2 V

5 uA

4

FLANGE MOUNT

800 V

150 Cel

-55 Cel

BRIGHT TIN

R-PSFM-T4

1

800 V

200 A

e3

260

SILICON

UL RECOGNIZED

GBU810_HF

Diodes Incorporated

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

4

NO

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

3.2 A

1.2 V

5 uA

4

FLANGE MOUNT

1000 V

150 Cel

-55 Cel

BRIGHT TIN

R-PSFM-T4

1

1000 V

200 A

e3

260

SILICON

UL RECOGNIZED

GBU806_HF

Diodes Incorporated

RECTIFIER DIODE

SINGLE

THROUGH-HOLE

4

NO

RECTANGULAR

PLASTIC/EPOXY

BRIDGE, 4 ELEMENTS

3.2 A

1.2 V

5 uA

4

FLANGE MOUNT

600 V

150 Cel

-55 Cel

BRIGHT TIN

R-PSFM-T4

1

600 V

200 A

e3

260

SILICON

UL RECOGNIZED

Bridge Rectifier Diodes

Bridge rectifier diodes are electronic components used to convert AC voltage to DC voltage in electronic circuits. They are commonly used in power supplies, battery chargers, and other devices that require a DC power source.

Bridge rectifier diodes consist of four diodes arranged in a bridge configuration. The input AC voltage is applied to the two outer terminals of the bridge, while the output DC voltage is taken from the two inner terminals. The diodes in the bridge allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Bridge rectifier diodes offer several advantages over other types of rectifiers, such as simplicity, efficiency, and reliability. They do not require a center-tapped transformer and can provide a higher output voltage than other rectifiers with the same input voltage.

Bridge rectifier diodes come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.