Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Config | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | No. of Phases | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Central Semiconductor |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
.5 A |
1 V |
.000005 uA |
4 |
SMALL OUTLINE |
Bridge Rectifier Diodes |
600 V |
150 Cel |
-65 Cel |
TIN LEAD |
R-PDSO-G4 |
Not Qualified |
1 |
30 A |
e0 |
SILICON |
||||||||||||||
|
Bourns |
BRIDGE RECTIFIER DIODE |
DUAL |
NO LEAD |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
4 |
SMALL OUTLINE |
1000 V |
175 Cel |
-55 Cel |
TIN |
R-PDSO-N4 |
1 |
LOW POWER LOSS |
1 |
45 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||
Shindengen Electric Manufacturing |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
3.5 A |
4 |
IN-LINE |
600 V |
150 Cel |
R-PSIP-T4 |
ISOLATED |
1 |
600 V |
240 A |
SILICON |
UL RECOGNIZED |
||||||||||||||||||
|
Rectron |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1.1 V |
.00001 uA |
4 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
Not Qualified |
1 |
100 V |
40 A |
e3 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||
|
Continental Device India |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1.1 V |
10 uA |
4 |
100 V |
SMALL OUTLINE |
100 V |
150 Cel |
-55 Cel |
R-PDSO-G4 |
1 |
100 V |
30 A |
SILICON |
IATF 16949 |
||||||||||||||
|
Vishay Intertechnology |
BRIDGE RECTIFIER DIODE |
DUAL |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1.1 V |
4 |
IN-LINE |
Bridge Rectifier Diodes |
100 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDIP-T4 |
Not Qualified |
1 |
100 V |
30 A |
e3 |
SILICON |
UL RECOGNIZED |
||||||||||||
|
Diodes Incorporated |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
25 A |
1.05 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
800 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PSFM-T4 |
1 |
ISOLATED |
Not Qualified |
1 |
350 A |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||
|
Micro Commercial Components |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
3 A |
1 V |
5 uA |
4 |
IN-LINE |
800 V |
150 Cel |
-55 Cel |
R-PSIP-T4 |
1 |
ISOLATED |
1 |
800 V |
135 A |
SILICON |
UL RECOGNIZED |
|||||||||||||
|
Micro Commercial Components |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
3 A |
1 V |
5 uA |
4 |
IN-LINE |
800 V |
150 Cel |
-55 Cel |
R-PSIP-T4 |
1 |
ISOLATED |
1 |
800 V |
135 A |
SILICON |
UL RECOGNIZED |
|||||||||||||
|
Panjit International |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
4 A |
4 |
IN-LINE |
800 V |
150 Cel |
-55 Cel |
R-PSIP-T4 |
1 |
800 V |
150 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
|||||||||||||||
|
Vishay Intertechnology |
BRIDGE RECTIFIER DIODE |
UPPER |
SOLDER LUG |
4 |
NO |
SQUARE |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
25 A |
1.1 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
1200 V |
150 Cel |
-55 Cel |
NICKEL |
S-PUFM-D4 |
ISOLATED |
Not Qualified |
1 |
420 A |
SILICON |
UL RECOGNIZED |
|||||||||||||
|
Changzhou Galaxy Century Microelectronics |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
4 A |
1.1 V |
10 uA |
4 |
FLANGE MOUNT |
1000 V |
150 Cel |
-55 Cel |
R-PSFM-T4 |
1 |
1000 V |
135 A |
SILICON |
||||||||||||||||
|
Comchip Technology |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
15 A |
1.1 V |
4 |
IN-LINE |
Bridge Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
R-PSIP-T4 |
1 |
1000 V |
240 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
|||||||||||||
|
Micro Commercial Components |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
25 A |
1 V |
10 uA |
4 |
FLANGE MOUNT |
600 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PSFM-T4 |
1 |
1 |
600 V |
300 A |
e3 |
10 |
260 |
SILICON |
|||||||||||
|
Taiwan Semiconductor |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
25 A |
1.2 V |
10 uA |
4 |
800 V |
FLANGE MOUNT |
800 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PSFM-T4 |
1 |
800 V |
300 A |
e3 |
10 |
260 |
SILICON |
UL RECOGNIZED |
||||||||||
|
Comchip Technology |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
25 A |
4 |
FLANGE MOUNT |
1000 V |
150 Cel |
-55 Cel |
R-PSFM-T4 |
1 |
1000 V |
350 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
|||||||||||||||
|
Taiwan Semiconductor |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
4 A |
1.1 V |
5 uA |
4 |
FLANGE MOUNT |
400 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PSFM-T4 |
ISOLATED |
1 |
80 A |
e3 |
SILICON |
AEC-Q101; UL RECOGNIZED |
|||||||||||||
|
Taiwan Semiconductor |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
4 A |
1.1 V |
5 uA |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
TIN |
R-PSFM-T4 |
1 |
ISOLATED |
Not Qualified |
1 |
80 A |
e3 |
260 |
SILICON |
AEC-Q101; UL RECOGNIZED |
|||||||||
|
Diodes Incorporated |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
.8 A |
1 V |
4 |
SMALL OUTLINE |
Bridge Rectifier Diodes |
200 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
Not Qualified |
1 |
200 V |
30 A |
e3 |
260 |
SILICON |
UL RECOGNIZED |
||||||||||
|
Taiwan Semiconductor |
BRIDGE RECTIFIER DIODE |
SINGLE |
WIRE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
4 A |
1.1 V |
5 uA |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
TIN |
R-PSFM-W4 |
1 |
ISOLATED |
Not Qualified |
1 |
150 A |
e3 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||
|
Micro Commercial Components |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
.65 V |
SCHOTTKY |
100 uA |
4 |
SMALL OUTLINE |
60 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
1 |
60 V |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||
|
Crydom |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
UNSPECIFIED |
BRIDGE, 4 ELEMENTS |
100 A |
1.2 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
1200 V |
125 Cel |
-40 Cel |
TIN |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
1 |
1500 A |
e3 |
SILICON |
UL RECOGNIZED |
||||||||||||
|
Crydom |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
UNSPECIFIED |
BRIDGE, 4 ELEMENTS |
100 A |
1.2 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
1200 V |
125 Cel |
-40 Cel |
TIN |
R-XUFM-X4 |
ISOLATED |
Not Qualified |
1 |
1500 A |
e3 |
SILICON |
UL RECOGNIZED |
||||||||||||
|
Onsemi |
BRIDGE RECTIFIER DIODE |
DUAL |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
2 A |
.65 V |
.034 us |
SCHOTTKY |
20 uA |
4 |
30 V |
SMALL OUTLINE |
125 Cel |
S-PDSO-N4 |
1 |
CATHODE |
2.08 W |
1 |
30 V |
12.5 A |
NOT SPECIFIED |
260 |
SILICON |
||||||||||
|
Diodes Incorporated |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
.5 A |
1.15 V |
.15 us |
4 |
SMALL OUTLINE |
Bridge Rectifier Diodes |
400 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
Not Qualified |
1 |
400 V |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||
|
Diodes Incorporated |
BRIDGE RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
SCHOTTKY |
4 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PBCC-N4 |
1 |
HIGH RELIABILITY |
1 |
30 V |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||
|
Vishay Intertechnology |
BRIDGE RECTIFIER DIODE |
UPPER |
SOLDER LUG |
4 |
NO |
SQUARE |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
25 A |
1.14 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
400 V |
150 Cel |
-55 Cel |
TIN SILVER COPPER |
S-PUFM-D4 |
ISOLATED |
1 |
420 A |
e1 |
SILICON |
UL RECOGNIZED |
|||||||||||||
|
Vishay Intertechnology |
BRIDGE RECTIFIER DIODE |
SINGLE |
WIRE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1.9 A |
4 |
IN-LINE |
600 V |
150 Cel |
-40 Cel |
R-PSIP-W4 |
1 |
52 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||
|
Vishay Intertechnology |
BRIDGE RECTIFIER DIODE |
UPPER |
WIRE |
4 |
NO |
SQUARE |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
8 A |
4 |
FLANGE MOUNT |
100 V |
150 Cel |
-55 Cel |
S-PUFM-W4 |
1 |
137 A |
NOT APPLICABLE |
NOT APPLICABLE |
SILICON |
|||||||||||||||||
Multicomp Pro |
BRIDGE RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
2.4 A |
4 |
FLANGE MOUNT |
1000 V |
150 Cel |
-55 Cel |
R-PSFM-T4 |
1 |
1000 V |
120 A |
SILICON |
|||||||||||||||||||
|
Vishay Intertechnology |
BRIDGE RECTIFIER DIODE |
DUAL |
WIRE |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1.2 A |
1.1 V |
4 |
IN-LINE |
Bridge Rectifier Diodes |
200 V |
150 Cel |
-55 Cel |
R-PDIP-W4 |
Not Qualified |
1 |
52 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||
|
Rectron |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
2 A |
.85 V |
SCHOTTKY |
200 uA |
4 |
80 V |
SMALL OUTLINE |
80 V |
150 Cel |
R-PDSO-G4 |
HIGH RELIABILITY |
1 |
80 V |
60 A |
SILICON |
||||||||||||||
Microsemi |
BRIDGE RECTIFIER DIODE |
DUAL |
WIRE |
4 |
NO |
RECTANGULAR |
UNSPECIFIED |
BRIDGE, 4 ELEMENTS |
1.5 A |
1.1 V |
AVALANCHE |
4 |
IN-LINE |
Bridge Rectifier Diodes |
500 V |
150 Cel |
Tin/Lead (Sn/Pb) |
R-XDIP-W4 |
Not Qualified |
1 |
25 A |
e0 |
SILICON |
|||||||||||||||
Microchip Technology |
BRIDGE RECTIFIER DIODE |
UPPER |
SOLDER LUG |
4 |
NO |
SQUARE |
UNSPECIFIED |
BRIDGE, 4 ELEMENTS |
10 A |
1.2 V |
AVALANCHE |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
200 V |
150 Cel |
-65 Cel |
TIN LEAD |
S-XUFM-D4 |
ISOLATED |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
|||||||||||||
Microchip Technology |
BRIDGE RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
SQUARE |
UNSPECIFIED |
BRIDGE, 4 ELEMENTS |
22.5 A |
.95 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
TIN LEAD |
S-XUFM-X4 |
ISOLATED |
Not Qualified |
1 |
110 V |
125 A |
e0 |
SILICON |
|||||||||||||
|
Diodes Incorporated |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
.5 A |
4 |
SMALL OUTLINE |
1000 V |
150 Cel |
-55 Cel |
R-PDSO-G4 |
1 |
1000 V |
20 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||
Weitron Technology |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1.1 V |
5 uA |
4 |
100 V |
SMALL OUTLINE |
100 V |
150 Cel |
-55 Cel |
R-PDSO-G4 |
1 |
100 V |
30 A |
SILICON |
||||||||||||||||
|
Taiwan Semiconductor |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
.8 A |
4 |
SMALL OUTLINE |
200 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G4 |
1 |
1 |
200 V |
30 A |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
||||||||||||
|
Sangdest Microelectronics (Nanjing) |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
4 |
SMALL OUTLINE |
600 V |
150 Cel |
-55 Cel |
PURE TIN |
R-PDSO-G4 |
1 |
600 V |
35 A |
SILICON |
|||||||||||||||||
|
Microchip Technology |
BRIDGE RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
100 A |
2 V |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
600 V |
175 Cel |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
LOW NOISE |
1 |
SILICON |
|||||||||||||||
Changzhou Galaxy Century Microelectronics |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
.8 A |
1.1 V |
10 uA |
4 |
SMALL OUTLINE |
600 V |
150 Cel |
-55 Cel |
R-PDSO-G4 |
1 |
40 A |
SILICON |
||||||||||||||||||
Micro Commercial Components |
BRIDGE RECTIFIER DIODE |
UPPER |
WIRE |
4 |
NO |
SQUARE |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
6 A |
1.1 V |
.00001 uA |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
800 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PUFM-W4 |
ISOLATED |
Not Qualified |
1 |
800 V |
200 A |
e3 |
260 |
SILICON |
UL RECOGNIZED |
||||||||||
|
Micro Commercial Components |
BRIDGE RECTIFIER DIODE |
UPPER |
WIRE |
4 |
NO |
SQUARE |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
10 A |
1.1 V |
10 uA |
4 |
FLANGE MOUNT |
Bridge Rectifier Diodes |
800 V |
150 Cel |
-55 Cel |
MATTE TIN |
S-PUFM-W4 |
1 |
1 |
800 V |
150 A |
e3 |
10 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||
|
Bourns |
BRIDGE RECTIFIER DIODE |
DUAL |
FLAT |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1 V |
SCHOTTKY |
5 uA |
4 |
200 V |
FLATPACK |
200 V |
175 Cel |
-55 Cel |
TIN |
R-PDFP-F4 |
1 |
Not Qualified |
LOW POWER LOSS |
1 |
200 V |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||
|
Bourns |
BRIDGE RECTIFIER DIODE |
DUAL |
FLAT |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1 V |
SCHOTTKY |
5 uA |
4 |
600 V |
FLATPACK |
600 V |
175 Cel |
-55 Cel |
TIN |
R-PDFP-F4 |
1 |
Not Qualified |
LOW POWER LOSS |
1 |
600 V |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||
|
Comchip Technology |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
2 A |
.85 V |
SCHOTTKY |
4 |
SMALL OUTLINE |
Bridge Rectifier Diodes |
100 V |
125 Cel |
-55 Cel |
R-PDSO-G4 |
FREE WHEELING DIODE |
1 |
TO-269AA |
100 V |
50 A |
30 |
250 |
SILICON |
|||||||||||
|
Continental Device India |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1.1 V |
10 uA |
4 |
50 V |
SMALL OUTLINE |
50 V |
150 Cel |
-55 Cel |
R-PDSO-G4 |
1 |
50 V |
30 A |
SILICON |
IATF 16949 |
||||||||||||||
|
Rectron |
BRIDGE RECTIFIER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
BRIDGE, 4 ELEMENTS |
1 A |
1.1 V |
.00001 uA |
4 |
SMALL OUTLINE |
Rectifier Diodes |
50 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
Not Qualified |
1 |
50 V |
40 A |
e3 |
260 |
SILICON |
UL RECOGNIZED |
Bridge rectifier diodes are electronic components used to convert AC voltage to DC voltage in electronic circuits. They are commonly used in power supplies, battery chargers, and other devices that require a DC power source.
Bridge rectifier diodes consist of four diodes arranged in a bridge configuration. The input AC voltage is applied to the two outer terminals of the bridge, while the output DC voltage is taken from the two inner terminals. The diodes in the bridge allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Bridge rectifier diodes offer several advantages over other types of rectifiers, such as simplicity, efficiency, and reliability. They do not require a center-tapped transformer and can provide a higher output voltage than other rectifiers with the same input voltage.
Bridge rectifier diodes come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.