Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Config | Technology | No. of Elements | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | Minimum Dynamic Impedance | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diotec Semiconductor Ag |
CURRENT REGULATOR DIODE |
YES |
FIELD EFFECT |
40 mA |
Current Regulator Diodes |
90 V |
3 V |
1 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Diotec Semiconductor Ag |
CURRENT REGULATOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
40 mA |
SMALL OUTLINE |
90 V |
150 Cel |
3 V |
-50 Cel |
R-PDSO-C2 |
1 W |
DO-214AA |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
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Vishay Intertechnology |
CURRENT REGULATOR DIODE |
YES |
2.9 mA |
Current Regulator Diodes |
50 V |
3.9 V |
.36 W |
SILICON |
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Microchip Technology |
CURRENT REGULATOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
FIELD EFFECT |
1 |
2.2 mA |
LONG FORM |
175 Cel |
1.95 V |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
MIL-19500 |
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Microchip Technology |
CURRENT REGULATOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
FIELD EFFECT |
1 |
2.2 mA |
LONG FORM |
175 Cel |
1.95 V |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
MIL-19500 |
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|
Central Semiconductor |
CURRENT REGULATOR DIODE |
YES |
1.1 mA |
Current Regulator Diodes |
100 V |
1.7 V |
TIN BISMUTH |
650000 ohm |
1 |
.5 W |
e6 |
10 |
260 |
SILICON |
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Micross Components |
CURRENT REGULATOR DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
3.6 mA |
SMALL OUTLINE |
40000 ohm |
135 Cel |
3.9 V |
-55 Cel |
80000 ohm |
R-PDSO-G3 |
.35 W |
SILICON |
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Vishay Siliconix |
CURRENT REGULATOR DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
3.6 mA |
SMALL OUTLINE |
3.9 V |
MATTE TIN |
R-PDSO-G3 |
Not Qualified |
.35 W |
TO-236AB |
e3 |
SILICON |
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Vishay Siliconix |
CURRENT REGULATOR DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
3.6 mA |
SMALL OUTLINE |
3.9 V |
R-PDSO-G3 |
Not Qualified |
.35 W |
TO-236AB |
SILICON |
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Calogic |
CURRENT REGULATOR DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
3.6 mA |
SMALL OUTLINE |
50 V |
70000 ohm |
150 Cel |
3.9 V |
-55 Cel |
R-PDSO-G3 |
Not Qualified |
.36 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||
Microchip Technology |
CURRENT REGULATOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
FIELD EFFECT |
1 |
4.7 mA |
LONG FORM |
175 Cel |
2.9 V |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
|||||||||
|
Central Semiconductor |
CURRENT REGULATOR DIODE |
YES |
15 mA |
Current Regulator Diodes |
50 V |
4.3 V |
TIN BISMUTH |
30000 ohm |
1 |
.5 W |
e6 |
10 |
260 |
SILICON |
|||||||||||||||||||
Microchip Technology |
CURRENT REGULATOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
FIELD EFFECT |
1 |
1 mA |
LONG FORM |
175 Cel |
1.35 V |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
MIL-19500 |
||||||||
|
Semitec |
CURRENT REGULATOR DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
8.2 mA |
SMALL OUTLINE |
Current Regulator Diodes |
50 V |
150 Cel |
6.56 V |
-40 Cel |
R-PDSO-F2 |
.5 W |
SILICON |
|||||||||||||
Microchip Technology |
CURRENT REGULATOR DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
FIELD EFFECT |
1 |
2.2 mA |
LONG FORM |
Current Regulator Diodes |
100 V |
175 Cel |
1.95 V |
-65 Cel |
TIN LEAD |
370000 ohm |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AB |
e0 |
SILICON |
||||||
|
Diotec Semiconductor Ag |
CURRENT REGULATOR DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
FIELD EFFECT |
1 |
40 mA |
SMALL OUTLINE |
90 V |
150 Cel |
3 V |
-50 Cel |
R-PDSO-C2 |
1 W |
DO-214AC |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
Current regulator diodes, also known as constant current diodes, are electronic components used to regulate the current flowing through a circuit. They are designed to provide a constant current independent of the voltage applied to the circuit.
Current regulator diodes work by maintaining a constant voltage drop across the diode, which in turn maintains a constant current through the circuit. The voltage drop is determined by the internal structure of the diode, which is typically made up of a P-N junction and a resistor.
Current regulator diodes are commonly used in electronic circuits that require a constant current, such as LED drivers, voltage regulators, and battery chargers. They offer several advantages over other types of current regulation, such as simplicity, low cost, and high reliability.
Current regulator diodes come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.