WIRE Current Regulator Diodes 17

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Technology	No. of Elements	Nominal Regulation Current (Ireg)	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Knee Impedance	Maximum Operating Temperature	Maximum Limiting Voltage	Minimum Operating Temperature	Terminal Finish	Minimum Dynamic Impedance	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	JEDEC-95 Code	JESD-609 Code	Diode Element Material	Reference Standard
1N5297	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM		100 V	205000 ohm	175 Cel	1.35 V	-55 Cel	TIN LEAD		O-XALF-W2	ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON
1N5306	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM		100 V	52000 ohm	175 Cel	1.95 V	-55 Cel	TIN LEAD		O-XALF-W2	ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON
J505	Vishay Intertechnology	CURRENT REGULATOR DIODE	BOTTOM	WIRE	2	NO	ROUND	PLASTIC/EPOXY	SINGLE	FIELD EFFECT	1	1 mA	CYLINDRICAL	Current Regulator Diodes	50 V			2.1 V		Tin/Lead (Sn/Pb)	500000 ohm	O-PBCY-W2			.35 W			e0	SILICON
JAN1N5297-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM					1.35 V		TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463
1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2	ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON
1N5314-1E3/TR	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM		100 V	12000 ohm	175 Cel	2.9 V	-65 Cel	Matte Tin (Sn)	235000 ohm	O-LALF-W2	ISOLATED		.5 W	HIGH SOURCE IMPEDANCE	DO-7	e3	SILICON
JAN1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463
JANTX1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463
JANTXV1N5314-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM					2.9 V		TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463
1N5314	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM		100 V	12000 ohm	175 Cel	2.9 V	-55 Cel	TIN LEAD		O-XALF-W2	ISOLATED	Not Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON
1N5314TR	Central Semiconductor	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	4.7 mA	LONG FORM				200 Cel	2.9 V	-65 Cel	TIN LEAD		O-LALF-W2	ISOLATED	Not Qualified	.6 W	HIGH RELIABILITY	DO-35	e0	SILICON
1N5306TR	Central Semiconductor	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM				200 Cel	1.95 V	-65 Cel	TIN LEAD		O-LALF-W2	ISOLATED	Not Qualified	.6 W	HIGH RELIABILITY	DO-35	e0	SILICON
JANS1N5306-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	2.2 mA	LONG FORM					1.95 V		TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463
1N5297-1E3	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM	Current Regulator Diodes	100 V		175 Cel	1.35 V	-65 Cel	MATTE TIN	800000 ohm	O-LALF-W2	ISOLATED		.5 W	METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE	DO-7	e3	SILICON
1N5297TR	Central Semiconductor	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM				200 Cel	1.35 V	-65 Cel	TIN LEAD		O-LALF-W2	ISOLATED	Not Qualified	.6 W	HIGH RELIABILITY	DO-35	e0	SILICON
JANTX1N5297-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM				175 Cel	1.35 V	-65 Cel	TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463
JANTXV1N5297-1	Microchip Technology	CURRENT REGULATOR DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	SINGLE	FIELD EFFECT	1	1 mA	LONG FORM					1.35 V		TIN LEAD		O-XALF-W2	ISOLATED	Qualified	.5 W	METALLURGICALLY BONDED	DO-35	e0	SILICON	MIL-19500/463

Current Regulator Diodes

Current regulator diodes, also known as constant current diodes, are electronic components used to regulate the current flowing through a circuit. They are designed to provide a constant current independent of the voltage applied to the circuit.

Current regulator diodes work by maintaining a constant voltage drop across the diode, which in turn maintains a constant current through the circuit. The voltage drop is determined by the internal structure of the diode, which is typically made up of a P-N junction and a resistor.

Current regulator diodes are commonly used in electronic circuits that require a constant current, such as LED drivers, voltage regulators, and battery chargers. They offer several advantages over other types of current regulation, such as simplicity, low cost, and high reliability.

Current regulator diodes come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.