Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.3 A |
.24 V |
.005 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-40 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
1 |
1 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.39 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
POWER |
Tin/Lead (Sn/Pb) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
100 A |
e0 |
30 |
235 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.73 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
175 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
CATHODE |
Not Qualified |
1 |
150 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
3.2 V |
.075 us |
AVALANCHE |
100 uA |
1 |
1200 V |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
HYPERFAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
Not Qualified |
100 W |
FREE WHEELING DIODE |
1 |
TO-220AC |
200 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.225 A |
.05 us |
1 |
SMALL OUTLINE |
250 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G2 |
1 |
.38 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.22 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
125 Cel |
-65 Cel |
R-PDSO-G2 |
FREE WHEELING DIODE |
1 |
5.5 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.65 V |
SCHOTTKY |
2 |
FLANGE MOUNT |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5 A |
.7 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
50 V |
125 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Genesic Semiconductor |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
2 V |
SCHOTTKY |
10 uA |
1 |
650 V |
SMALL OUTLINE |
Rectifier Diodes |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-C2 |
64 W |
PD-CASE |
1 |
DO-214AA |
10 A |
SILICON CARBIDE |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
7.5 A |
.84 V |
SCHOTTKY |
100 uA |
2 |
FLANGE MOUNT |
35 V |
150 Cel |
HIGH POWER |
-65 Cel |
Tin/Lead (Sn/Pb) |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE |
1 |
TO-220AB |
150 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
|
Central Semiconductor |
RECTIFIER DIODE |
YES |
SINGLE |
1 A |
1 V |
.05 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
150 Cel |
Matte Tin (Sn) |
1 |
30 A |
e3 |
||||||||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.15 A |
.004 us |
1 |
SMALL OUTLINE |
75 V |
175 Cel |
-55 Cel |
R-CDSO-R2 |
.5 W |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
.004 us |
1 |
LONG FORM |
100 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.62 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
YES |
.15 A |
.715 V |
.004 us |
.5 uA |
80 V |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
4 A |
|||||||||||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.8 V |
.005 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
200 Cel |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
DO-35 |
2 A |
e0 |
SILICON |
MIL-19500/116L |
|||||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.55 V |
SCHOTTKY |
15 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-65 Cel |
TIN LEAD |
R-PDSO-G2 |
Not Qualified |
.25 W |
1 |
1 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.035 us |
1 |
SMALL OUTLINE |
600 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
LOW POWER LOSS |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.12 A |
.38 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.7 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-214AB |
100 A |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
2 BANKS, COMMON ANODE, 2 ELEMENTS |
.2 A |
.24 V |
SCHOTTKY |
2 uA |
4 |
25 V |
SMALL OUTLINE |
Signal Diodes |
30 V |
125 Cel |
-65 Cel |
TIN |
R-PDSO-F6 |
1 |
Not Qualified |
.35 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.22 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
125 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
FREE WHEELING DIODE |
1 |
5.5 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.35 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW POWER LOSS |
1 |
70 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
NO |
SINGLE |
1 A |
1.2 V |
1 |
Rectifier Diodes |
1000 V |
175 Cel |
1 |
30 A |
|||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.24 V |
.005 us |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.2 W |
1 |
.6 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
.008 us |
1 |
LONG FORM |
100 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.008 us |
5 uA |
1 |
75 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
100 V |
2 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.15 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
HIGH RELIABILITY |
1 |
100 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.05 V |
.08 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
175 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
20 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.49 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
HIGH POWER |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
120 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
4 A |
.61 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
HIGH POWER |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
790 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
40 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
.2 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
75 A |
2.6 V |
.1 us |
AVALANCHE |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
175 Cel |
HYPERFAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-247 |
500 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.1 A |
.33 V |
.005 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
.75 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.3 A |
.9 V |
.005 us |
SCHOTTKY |
1 uA |
2 |
30 V |
SMALL OUTLINE |
40 V |
150 Cel |
FAST RECOVERY |
-40 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
1 |
1 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
5 uA |
1 |
1000 V |
LONG FORM |
1000 V |
175 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AC |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
.975 V |
.035 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
3 W |
FREE WHEELING DIODE |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
R-PDSO-G3 |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||||||
Microsemi |
RECTIFIER DIODE |
YES |
SINGLE |
1 A |
1.3 V |
1 |
Rectifier Diodes |
400 V |
175 Cel |
1 |
30 A |
|||||||||||||||||||||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
DO-213AA |
SILICON |
|||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.15 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
R-PDSO-C2 |
Not Qualified |
1 |
50 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.86 V |
SCHOTTKY |
4 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
HIGH VOLTAGE POWER |
-40 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
LOW LEAKAGE CURRENT |
1 |
DO-214AA |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
6 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
60 V |
HIGH POWER |
-55 Cel |
Matte Tin (Sn) |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
320 A |
e3 |
10 |
260 |
SILICON |
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|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.005 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
e3 |
30 |
260 |
SILICON |
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Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.215 A |
.715 V |
.006 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
R-PDSO-G3 |
1 |
Not Qualified |
.225 W |
TO-236AB |
2 A |
e0 |
30 |
235 |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
.35 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
R-PDSO-F3 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
275 A |
e3 |
30 |
260 |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.