Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.07 A |
.41 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-G3 |
1 |
Not Qualified |
.225 W |
FAST SWITCHING |
1 |
TO-236AB |
.6 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.42 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
Motorola |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.74 V |
SCHOTTKY |
500 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
R-PDSO-C2 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AB |
80 A |
SILICON |
||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.9 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
-50 Cel |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AB |
30 A |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.975 V |
.035 us |
5 uA |
1 |
200 V |
FLANGE MOUNT |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
PURE MATTE TIN |
R-PSFM-T2 |
1 |
CATHODE |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE |
1 |
TO-220AC |
200 V |
100 A |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.07 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
70 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.225 A |
.05 us |
2 |
SMALL OUTLINE |
250 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
.25 W |
TO-236AB |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||||
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.225 A |
.05 us |
2 |
SMALL OUTLINE |
250 V |
150 Cel |
R-PDSO-G3 |
.25 W |
TO-236AB |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Wolfspeed |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
38 A |
1.5 V |
SCHOTTKY |
50 uA |
2 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T3 |
CATHODE |
116 W |
LOW LEAKAGE CURRENT, PD-CASE |
1 |
TO-247 |
650 V |
75 A |
SILICON CARBIDE |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.9 V |
.03 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-214AA |
50 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
.44 V |
SCHOTTKY |
220 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-F3 |
1 |
CATHODE |
1 |
TO-277 |
300 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.12 A |
.38 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
-65 Cel |
R-PDSO-G3 |
.6 A |
SILICON |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.13 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.83 W |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
YES |
SINGLE |
2 A |
.575 V |
SCHOTTKY |
1 |
Rectifier Diodes |
60 V |
150 Cel |
TIN |
1 |
1 |
18 A |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.5 V |
SCHOTTKY |
200 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-214AC |
65 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.25 A |
.43 V |
SCHOTTKY |
2 uA |
2 |
SMALL OUTLINE |
40 V |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
.25 W |
PD-CASE |
1 |
.8 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.975 V |
.035 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY HIGH POWER |
-65 Cel |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
TO-220AC |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.95 V |
.035 us |
5 uA |
1 |
FLANGE MOUNT |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
LOW POWER LOSS |
1 |
TO-220AC |
100 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.875 V |
.035 us |
2 uA |
1 |
SMALL OUTLINE |
200 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
FREE WHEELING DIODE |
1 |
DO-214AA |
40 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.13 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
10 V |
150 Cel |
EFFICIENCY |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.83 W |
1 |
9 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.15 V |
2.5 us |
10 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-214AB |
100 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
5 uA |
1 |
50 V |
LONG FORM |
50 V |
175 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AC |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
e3 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.006 us |
2 |
SMALL OUTLINE |
70 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.225 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.36 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
40 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
SCHOTTKY |
1 |
FLANGE MOUNT |
45 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
Not Qualified |
LOW POWER LOSS |
1 |
TO-220AC |
300 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0031 us |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
1 |
.525 W |
1 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
YES |
SINGLE |
1 A |
1.1 V |
BLANK |
1 |
Rectifier Diodes |
1000 V |
175 Cel |
TIN SILVER COPPER OVER NICKEL |
1 |
1 |
100 A |
10 |
260 |
|||||||||||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
20 V |
125 Cel |
-55 Cel |
R-PDSO-G2 |
.3 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.76 V |
SCHOTTKY |
3.5 uA |
1 |
SMALL OUTLINE |
100 V |
175 Cel |
HIGH VOLTAGE POWER |
-40 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
LOW LEAKAGE CURRENT |
1 |
130 A |
e3 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.57 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
HIGH POWER |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
40 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1.25 V |
.006 us |
1 uA |
1 |
75 V |
SMALL OUTLINE |
100 V |
150 Cel |
SWITCHING |
-55 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
.35 W |
1 |
TO-236AB |
1 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
125 Cel |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
1 |
e3 |
40 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.875 V |
.035 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
50 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST RECOVERY POWER |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AA |
40 A |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.8 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
HIGH POWER |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
40 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 V |
SCHOTTKY |
.5 uA |
1 |
20 V |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-214AC |
30 A |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.25 A |
1.25 V |
.05 us |
AVALANCHE |
.1 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
110 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
1 |
TO-236AB |
3 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.15 A |
.006 us |
2 |
SMALL OUTLINE |
70 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
.3 W |
e3 |
SILICON |
||||||||||||||||||||||||||||||||
ROHM |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
5 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 4 ELEMENTS |
.025 A |
.9 V |
.004 us |
.1 uA |
4 |
70 V |
IN-LINE |
Other Diodes |
80 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PSIP-T5 |
Not Qualified |
.08 W |
HIGH RELIABILITY |
.25 A |
e0 |
SILICON |
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Onsemi |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.18 V |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
175 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
30 A |
e0 |
30 |
235 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
4 A |
.89 V |
.035 us |
5 uA |
1 |
SMALL OUTLINE |
200 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
DO-214AB |
125 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
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|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.25 us |
5 uA |
1 |
SMALL OUTLINE |
1000 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
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|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.5 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
POWER |
Matte Tin (Sn) - annealed |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-263AB |
220 A |
e3 |
30 |
245 |
SILICON |
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Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
150 V |
175 Cel |
-65 Cel |
TIN LEAD OVER NICKEL |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
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|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.875 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
HIGH RELIABLITY |
1 |
35 A |
e3 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.