4 Diodes & Rectifiers 673

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Working Test Current Config Frequency Band Nominal Reference Voltage Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Nominal Regulation Current (Ireg) Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Maximum Dynamic Impedance Maximum Limiting Voltage Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases JEDEC-95 Code Diode Cap Tolerance Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BAT140CT/R

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

TIN

R-PDSO-G4

CATHODE

Not Qualified

e3

SILICON

BAS56T/R

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.2 A

1 V

.006 us

.1 uA

2

60 V

SMALL OUTLINE

Other Diodes

60 V

150 Cel

TIN

R-PDSO-G4

CATHODE

Not Qualified

.25 W

2 A

e3

260

SILICON

BAT140S

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 A

.5 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

40 V

125 Cel

TIN

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

10 A

e3

SILICON

BAT74-T

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.2 A

1 V

.005 us

SCHOTTKY

2 uA

2

SMALL OUTLINE

30 V

125 Cel

TIN

R-PDSO-G4

Not Qualified

.23 W

.6 A

e3

40

260

SILICON

BAV23/DG

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.125 A

1.25 V

.05 us

100 uA

2

200 V

SMALL OUTLINE

Other Diodes

250 V

150 Cel

-65 Cel

R-PDSO-G4

Not Qualified

.25 W

HALOGEN FREE

SILICON

BAT160STRL

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

60 V

150 Cel

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

LOW SWITCHING LOSS

SILICON

IEC-134

BAS56212

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.006 us

2

SMALL OUTLINE

60 V

150 Cel

R-PDSO-G4

Not Qualified

.25 W

SILICON

BAT120S

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 A

.45 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

25 V

125 Cel

Tin (Sn)

R-PDSO-G4

1

ANODE AND CATHODE

Not Qualified

10 A

e3

30

260

SILICON

BAT160ATRL

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

60 V

150 Cel

R-PDSO-G4

ANODE

Not Qualified

LOW SWITCHING LOSS

SILICON

IEC-134

BYV40-150

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

1.5 A

1 V

.025 us

10 uA

2

SMALL OUTLINE

150 V

150 Cel

EFFICIENCY

R-PDSO-G4

CATHODE

Not Qualified

1.5 W

1

6.6 A

SILICON

BAT120CTRL

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

125 Cel

R-PDSO-G4

CATHODE

Not Qualified

SILICON

BAT160A

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1 A

.85 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

60 V

150 Cel

Tin (Sn)

R-PDSO-G4

1

ANODE

Not Qualified

LOW SWITCHING LOSS

10 A

e3

30

260

SILICON

BAV23212

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.05 us

2

SMALL OUTLINE

250 V

150 Cel

R-PDSO-G4

Not Qualified

.25 W

SILICON

BAT120AT/R

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

125 Cel

TIN

R-PDSO-G4

ANODE

Not Qualified

e3

SILICON

BAS56-T

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.2 A

1 V

.006 us

.1 uA

2

SMALL OUTLINE

60 V

150 Cel

TIN

R-PDSO-G4

CATHODE

Not Qualified

.25 W

2 A

e3

SILICON

BAT120A,115

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1 A

.45 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

25 V

125 Cel

TIN

R-PDSO-G4

1

ANODE

Not Qualified

10 A

e3

30

260

SILICON

BAS28-T

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.215 A

1.25 V

.004 us

1 uA

2

SMALL OUTLINE

85 V

150 Cel

TIN

R-PDSO-G4

CATHODE

Not Qualified

.25 W

4 A

e3

SILICON

CECC50001-074

BAS70-07235

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.07 A

1 V

SCHOTTKY

10 uA

2

SMALL OUTLINE

150 Cel

R-PDSO-G4

Not Qualified

.25 W

.1 A

SILICON

BAS28

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.215 A

1.25 V

.004 us

1 uA

2

75 V

SMALL OUTLINE

Other Diodes

85 V

150 Cel

Tin (Sn)

R-PDSO-G4

1

CATHODE

Not Qualified

.25 W

4 A

e3

30

260

SILICON

CECC50001-074

BAT140AT/R

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

TIN

R-PDSO-G4

ANODE

Not Qualified

e3

SILICON

BYV40E-150

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

1.5 A

1 V

.025 us

10 uA

2

SMALL OUTLINE

Rectifier Diodes

150 V

150 Cel

ULTRA FAST SOFT RECOVERY

TIN

R-PDSO-G4

1

CATHODE

Not Qualified

1

6.6 A

e3

SILICON

IEC-134

BAT160AT/R

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

150 Cel

TIN

R-PDSO-G4

ANODE

Not Qualified

LOW SWITCHING LOSS

e3

SILICON

BAV23

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.225 A

1.25 V

.05 us

.1 uA

2

200 V

SMALL OUTLINE

Other Diodes

250 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G4

1

Not Qualified

.25 W

HALOGEN FREE

2.5 A

e3

30

260

SILICON

BAT120ST/R

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 A

SCHOTTKY

2

SMALL OUTLINE

125 Cel

TIN

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

e3

SILICON

BAS56,235

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.2 A

1 V

.006 us

.1 uA

2

60 V

SMALL OUTLINE

Other Diodes

60 V

150 Cel

TIN

R-PDSO-G4

1

CATHODE

Not Qualified

.25 W

2 A

e3

30

260

SILICON

BAS28/T3

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.215 A

1.25 V

.004 us

1 uA

2

SMALL OUTLINE

85 V

150 Cel

TIN

R-PDSO-G4

CATHODE

Not Qualified

.25 W

4 A

e3

40

260

SILICON

CECC50001-074

BAT160S

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1 A

.85 V

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

60 V

150 Cel

Tin (Sn)

R-PDSO-G4

1

ANODE AND CATHODE

Not Qualified

LOW SWITCHING LOSS

10 A

e3

30

260

SILICON

BAS70-07/A2,215

NXP Semiconductors

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.07 A

1 V

SCHOTTKY

10 uA

2

70 V

SMALL OUTLINE

70 V

150 Cel

GENERAL PURPOSE

-65 Cel

R-PDSO-G4

LOW LEAKAGE CURRENT

1

.1 A

SILICON

IEC-60134

IDL04G65C5XUMA2

Infineon Technologies

RECTIFIER DIODE

SINGLE

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.7 V

SCHOTTKY

70 uA

1

SMALL OUTLINE

650 V

150 Cel

EFFICIENCY

-55 Cel

TIN

S-PSSO-N4

3

CATHODE

62 W

HIGH RELIABILITY, PD-CASE

1

21 A

e3

SILICON CARBIDE

BAW101E6327

Infineon Technologies

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.25 A

1.3 V

1 us

50 uA

2

250 V

SMALL OUTLINE

Other Diodes

300 V

150 Cel

-65 Cel

TIN

R-PDSO-G4

1

Not Qualified

.35 W

e3

260

SILICON

DD1200S33KL2CB5NOSA1

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

1200 A

2

FLANGE MOUNT

3300 V

125 Cel

GENERAL PURPOSE

-40 Cel

R-XUFM-X4

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAW101E6327XT

Infineon Technologies

RECTIFIER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.25 A

1.3 V

1 us

.15 uA

2

250 V

SMALL OUTLINE

300 V

150 Cel

HIGH VOLTAGE

Tin (Sn)

R-PDSO-G4

1

.35 W

TR, 7 INCH; 3000

1

300 V

e3

SILICON

AEC-Q101

DD1200S12H4HOSA1

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

1200 A

2.35 V

2

FLANGE MOUNT

1200 V

150 Cel

GENERAL PURPOSE

-40 Cel

R-PUFM-X4

1

ISOLATED

1

SILICON

IEC-61140; UL APPROVED

B40H2L60S02

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

40 A

1.55 V

.2 us

5000 uA

2

600 V

FLANGE MOUNT

Other Diodes

600 V

125 Cel

FAST RECOVERY

-40 Cel

R-PUFM-X4

ISOLATED

Not Qualified

1

500 A

40

260

SILICON

UL RECOGNIZED

B40H2L10S05

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

40 A

1.55 V

.5 us

5000 uA

2

100 V

FLANGE MOUNT

Other Diodes

100 V

125 Cel

FAST RECOVERY

-40 Cel

R-PUFM-X4

ISOLATED

Not Qualified

1

500 A

40

260

SILICON

UL RECOGNIZED

IDL02G65C5

Infineon Technologies

RECTIFIER DIODE

SINGLE

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.7 V

SCHOTTKY

35 uA

1

SMALL OUTLINE

650 V

150 Cel

EFFICIENCY

-55 Cel

TIN

S-PSSO-N4

3

CATHODE

46 W

PD-CASE

1

13 A

e3

SILICON CARBIDE

IDL04G65C5

Infineon Technologies

RECTIFIER DIODE

SINGLE

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.7 V

SCHOTTKY

70 uA

1

SMALL OUTLINE

650 V

150 Cel

EFFICIENCY

-55 Cel

TIN

S-PSSO-N4

3

CATHODE

62 W

PD-CASE

1

21 A

e3

SILICON CARBIDE

DD250S65K3

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

250 A

3.5 V

2

FLANGE MOUNT

6500 V

125 Cel

GENERAL PURPOSE

-50 Cel

R-PUFM-X4

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-1287; IEC-61140; UL APPROVED

DD750S65K3T

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

750 A

2

FLANGE MOUNT

6500 V

125 Cel

GENERAL PURPOSE

-50 Cel

TIN LEAD

R-XUFM-X4

ISOLATED

Not Qualified

1

e0

SILICON

DD400S33K2CNOSA1

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

400 A

3.5 V

2

FLANGE MOUNT

Other Diodes

3300 V

150 Cel

GENERAL PURPOSE

-40 Cel

R-XUFM-X4

ISOLATED

Not Qualified

800000 W

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

DD800S17H4_B2

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

800 A

2.1 V

2

FLANGE MOUNT

Other Diodes

1700 V

150 Cel

HIGH POWER

-40 Cel

R-XUFM-X4

1

ISOLATED

Not Qualified

800000 W

1

SILICON

DD600S65K3

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

600 A

3.5 V

2

FLANGE MOUNT

6500 V

125 Cel

GENERAL PURPOSE

-50 Cel

R-PUFM-X4

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-1287; IEC-61140; UL APPROVED

DD400S17K6CB2NOSA1

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

400 A

2.5 V

2

FLANGE MOUNT

1700 V

125 Cel

GENERAL PURPOSE

-40 Cel

R-XUFM-X4

ISOLATED

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

HFA80FA120PBF

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

40 A

.052 us

2

FLANGE MOUNT

150 Cel

ULTRA FAST SOFT RECOVERY

-55 Cel

R-PUFM-X4

ISOLATED

1

400 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

DD600S16K4

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

600 A

2.8 V

40000 uA

2

1600 V

FLANGE MOUNT

Other Diodes

1600 V

150 Cel

GENERAL PURPOSE

-55 Cel

R-XUFM-X4

ISOLATED

Not Qualified

1

NOT SPECIFIED

NOT SPECIFIED

SILICON

B40H2L80S05

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

40 A

1.55 V

.5 us

5000 uA

2

800 V

FLANGE MOUNT

Other Diodes

800 V

125 Cel

FAST RECOVERY

-40 Cel

R-PUFM-X4

ISOLATED

Not Qualified

1

500 A

40

260

SILICON

UL RECOGNIZED

DD1200S12H4

Infineon Technologies

RECTIFIER DIODE

UPPER

UNSPECIFIED

4

NO

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

1200 A

2.35 V

2

FLANGE MOUNT

1200 V

150 Cel

GENERAL PURPOSE

-40 Cel

R-PUFM-X4

1

ISOLATED

1

SILICON

IEC-61140; UL APPROVED

IDL12G65C5

Infineon Technologies

RECTIFIER DIODE

SINGLE

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

1.7 V

SCHOTTKY

190 uA

1

SMALL OUTLINE

650 V

150 Cel

EFFICIENCY

-55 Cel

TIN

S-PSSO-N4

3

CATHODE

138 W

PD-CASE

1

50 A

e3

SILICON CARBIDE

Diodes & Rectifiers

Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.

A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.

Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.

Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.

Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.