Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
200 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3 A |
1.2 V |
5 uA |
1 |
LONG FORM |
600 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-XALF-W2 |
ISOLATED |
6.25 W |
1 |
DO-201AD |
200 A |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
30 V |
125 Cel |
-65 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
DO-41 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.035 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
e3 |
SILICON |
|||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 V |
.004 us |
1 |
LONG FORM |
100 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
100 V |
175 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
20 V |
125 Cel |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AL |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
110 A |
1.15 V |
AVALANCHE |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1200 V |
180 Cel |
GENERAL PURPOSE |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
1400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 us |
1 |
LONG FORM |
600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.35 A |
.9 V |
.01 us |
SCHOTTKY |
25 uA |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.33 W |
FAST SWITCHING |
1 |
7.5 A |
e3 |
30 |
235 |
SILICON |
|||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
O-PALF-W2 |
1 |
ISOLATED |
1 |
DO-41 |
30 A |
e3 |
5 |
260 |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.005 us |
1 |
LONG FORM |
200 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/116L |
|||||||||||||||||||||||||||||||
|
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-201AD |
200 A |
SILICON |
|||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
2 us |
1 |
LONG FORM |
400 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-201AD |
125 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-XELF-R2 |
1 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
MIL-19500/586F |
||||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
.004 us |
1 |
LONG FORM |
100 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.62 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.8 V |
.005 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
200 Cel |
-65 Cel |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
DO-35 |
2 A |
e0 |
SILICON |
MIL-19500/116L |
|||||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.3 A |
.008 us |
1 |
LONG FORM |
100 V |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.008 us |
5 uA |
1 |
75 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
100 V |
2 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1.5 us |
5 uA |
1 |
1000 V |
LONG FORM |
1000 V |
175 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-204AC |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
DO-213AA |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-65 Cel |
BRIGHT TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.9 V |
SCHOTTKY |
2000 uA |
1 |
LONG FORM |
30 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY |
1 |
DO-201AD |
80 A |
SILICON |
|||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.9 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
150 Cel |
EFFICIENCY |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING |
1 |
DO-201AD |
80 A |
e0 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
150 Cel |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-204AL |
e3 |
40 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.2 V |
10 uA |
1 |
1000 V |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.008 us |
5 uA |
1 |
75 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
100 V |
2 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Temic Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.008 us |
5 uA |
1 |
LONG FORM |
100 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
EXTREME FAST SWITCHES |
1 |
2 A |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.34 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
25 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
LONG FORM |
O-LELF-R2 |
Not Qualified |
DO-213AA |
|||||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
.05 us |
15 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
HIGH VOLTAGE |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
250 V |
1 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.875 V |
.03 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
5 W |
HIGH RELIABILITY |
1 |
125 A |
e0 |
SILICON |
MIL-19500/477 |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
1 |
LONG FORM |
175 Cel |
POWER |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
100 A |
e0 |
SILICON |
MIL-19500/420G |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
5 W |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||
Spc Technology/ Multicomp |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.35 V |
.06 us |
10 uA |
1 |
LONG FORM |
200 V |
150 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-27 |
150 A |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.