Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
5 uA |
1 |
LONG FORM |
1000 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.05 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
35 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 us |
1 |
LONG FORM |
1000 V |
150 Cel |
-55 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-41 |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
5 A |
.67 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
EFFICIENCY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
85 A |
1.2 V |
9000 uA |
1 |
POST/STUD MOUNT |
400 V |
180 Cel |
GENERAL PURPOSE |
-65 Cel |
Tin (Sn) - with Nickel (Ni) barrier |
O-MUPM-D1 |
ANODE |
1 |
DO-203AB |
1800 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
40 A |
1.06 V |
SCHOTTKY |
300 uA |
2 |
150 V |
FLANGE MOUNT |
150 V |
150 Cel |
EFFICIENCY |
-40 Cel |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-247AD |
500 A |
SILICON |
|||||||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
NO |
SINGLE |
.25 A |
1 V |
.05 us |
1 |
Rectifier Diodes |
250 V |
175 Cel |
1 |
|||||||||||||||||||||||||||||||||||||||||||
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.5 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE, HIGH SURGE CAPABILITY |
1 |
DO-41 |
40 A |
e0 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
UNSPECIFIED |
SINGLE |
1 A |
5 us |
1 |
LONG FORM |
E-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
.89 V |
.025 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
MATTE TIN |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
1 |
TO-220AB |
50 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Wolfspeed |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
4 A |
SCHOTTKY |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PSFM-T2 |
CATHODE |
Not Qualified |
1 |
TO-220AC |
110 A |
e3 |
SILICON CARBIDE |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
.895 V |
.035 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
R-PSFM-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
TO-220AB |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
120 A |
.07 us |
SCHOTTKY |
2 |
FLANGE MOUNT |
200 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW NOISE, HIGH RELIABILITY |
1 |
1000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
MATTE TIN |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
1 |
DO-35 |
5 A |
e3 |
SILICON |
CECC50001-022 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.25 A |
1 V |
.05 us |
15 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
HIGH VOLTAGE |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-204AH |
250 V |
1 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.2 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.8 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
1.5 V |
.05 us |
5 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PSFM-T2 |
CATHODE |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
TO-220AC |
100 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.88 V |
SCHOTTKY |
2 |
FLANGE MOUNT |
Rectifier Diodes |
100 V |
HIGH VOLTAGE POWER |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
Not Qualified |
AVALANCHE RATED |
1 |
TO-220AB |
250 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
POWER |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
75 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
.63 V |
SCHOTTKY |
200 uA |
1 |
FLANGE MOUNT |
45 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN OVER NICKEL |
R-PSFM-T2 |
CATHODE |
FREE WHEELING DIODE |
1 |
TO-220AC |
1800 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
30 V |
EFFICIENCY |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
80 A |
SILICON |
||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.38 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-204AL |
20 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.94 V |
SCHOTTKY |
200 uA |
2 |
FLANGE MOUNT |
Rectifier Diodes |
100 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
LOW POWER LOSS |
1 |
TO-220AB |
200 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
26 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
214 W |
1 |
TO-247 |
119 A |
e3 |
SILICON CARBIDE |
|||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
50 V |
150 Cel |
-55 Cel |
O-PALF-W2 |
ISOLATED |
1 |
DO-41 |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
.45 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
1 |
DO-204AH |
750 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
.63 V |
SCHOTTKY |
500 uA |
1 |
FLANGE MOUNT |
Rectifier Diodes |
45 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PSFM-T2 |
CATHODE |
LOW POWER LOSS |
1 |
TO-220AC |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.4 A |
1 |
LONG FORM |
600 V |
150 Cel |
-65 Cel |
Tin/Lead (Sn63Pb37) |
O-LALF-W2 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1.3 V |
2 us |
.5 uA |
1 |
600 V |
LONG FORM |
600 V |
200 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LALF-W2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
660 V |
30 A |
SILICON |
MIL-19500 |
|||||||||||||||||||||||||||
Micro Commercial Components |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
16 A |
.7 V |
SCHOTTKY |
100 uA |
2 |
FLANGE MOUNT |
45 V |
EFFICIENCY |
TIN LEAD |
R-PSFM-T3 |
CATHODE |
Not Qualified |
LOW POWER LOSS |
1 |
TO-220AB |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
.71 V |
.035 us |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
125 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
1.2 V |
.06 us |
SCHOTTKY |
1 |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
TIN |
R-PSFM-T2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-220AC |
150 A |
e3 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1.8 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
2000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-204AL |
20 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
5 uA |
1 |
LONG FORM |
400 V |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-41 |
30 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.1 V |
5 us |
5 uA |
1 |
LONG FORM |
1000 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE |
1 |
DO-201AD |
125 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.38 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-201AD |
80 A |
e3 |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.05 us |
10 uA |
1 |
600 V |
LONG FORM |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
BRIGHT TIN |
O-PALF-W2 |
ISOLATED |
1 |
DO-201AD |
600 V |
110 A |
e3 |
260 |
SILICON |
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Lite-on Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.05 us |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
O-PALF-W2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
SILICON |
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|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
1.8 V |
.1 us |
AVALANCHE |
1 |
FLANGE MOUNT |
Rectifier Diodes |
800 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
R-PSFM-T2 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-220AC |
100 A |
e3 |
SILICON |
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|
Semikron International |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
120 A |
2.7 V |
1.02 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1700 V |
150 Cel |
FAST SOFT RECOVERY |
-40 Cel |
TIN SILVER |
R-XUFM-X2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, SNUBBER DIODE |
1 |
1800 A |
e2 |
SILICON |
UL RECOGNIZED |
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|
STMicroelectronics |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
50 A |
.8 V |
.065 us |
500 uA |
2 |
200 V |
FLANGE MOUNT |
Other Diodes |
200 V |
150 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
MATTE TIN |
R-PUFM-X4 |
1 |
ISOLATED |
Not Qualified |
1 |
750 A |
e3 |
SILICON |
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|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e3 |
30 |
260 |
SILICON |
CECC50001-021 |
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|
Good-ark Electronics |
RECTIFIER DIODE |
NO |
SINGLE |
1 A |
1.1 V |
1 |
Rectifier Diodes |
1250 V |
150 Cel |
1 |
50 A |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.