Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Panjit International |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.9 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
200 V |
175 Cel |
EFFICIENCY |
-65 Cel |
R-PSFM-T3 |
ISOLATED |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
275 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Daco Semiconductor |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
80 A |
.75 V |
SCHOTTKY |
1000 uA |
1 |
POST/STUD MOUNT |
30 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-MUPM-D1 |
CATHODE |
1 |
DO-203AB |
1000 A |
SILICON |
||||||||||||||||||||||||||||||
Daco Semiconductor |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
80 A |
.75 V |
SCHOTTKY |
1000 uA |
1 |
POST/STUD MOUNT |
30 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
O-MUPM-D1 |
ANODE |
1 |
DO-203AB |
1000 A |
SILICON |
||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
.975 V |
.025 us |
5 uA |
2 |
FLANGE MOUNT |
200 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST RECOVERY |
-55 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
1 |
TO-220AB |
100 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.5 us |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
NO |
SINGLE |
3 A |
45 V |
1 |
Rectifier Diodes |
20000 V |
50 Cel |
-40 Cel |
1 |
50 A |
||||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
.48 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
220 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
.05 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
150 A |
e3 |
SILICON |
|||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
PIN/PEG |
3 |
NO |
SQUARE |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
12 A |
1.35 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
POWER ULTRA FAST RECOVERY |
TIN LEAD |
S-XSFM-P3 |
Not Qualified |
1 |
TO-254AA |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
20 us |
1 |
LONG FORM |
Rectifier Diodes |
1500 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.75 V |
SCHOTTKY |
2 |
FLANGE MOUNT |
Rectifier Diodes |
60 V |
150 Cel |
HIGH VOLTAGE POWER |
MATTE TIN |
R-PSFM-T3 |
LOW NOISE |
1 |
TO-220AB |
150 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Sangdest Microelectronics (Nanjing) |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
30 A |
SCHOTTKY |
2 |
FLANGE MOUNT |
GENERAL PURPOSE |
R-PSFM-T3 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
TO-247AD |
432 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.55 V |
SCHOTTKY |
2 |
FLANGE MOUNT |
Rectifier Diodes |
45 V |
175 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
Not Qualified |
1 |
TO-247AC |
500 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
4 A |
1.28 V |
.05 us |
10 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
DO-201AD |
125 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.84 V |
.022 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
200 V |
175 Cel |
EFFICIENCY |
MATTE TIN |
R-PSFM-T3 |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-247AC |
180 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
30 A |
1.7 V |
.1 us |
100 uA |
2 |
1000 V |
FLANGE MOUNT |
Other Diodes |
1000 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-65 Cel |
NICKEL |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY |
1 |
240 A |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
7.5 A |
.7 V |
SCHOTTKY |
800 uA |
2 |
FLANGE MOUNT |
45 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN OVER NICKEL |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE |
1 |
TO-220AB |
810 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.46 V |
4500 uA |
1 |
POST/STUD MOUNT |
1600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
1 |
DO-203AB |
1250 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
-65 Cel |
Tin (Sn) |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-41 |
30 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
75 V |
175 Cel |
-65 Cel |
Tin/Silver (Sn96.5Ag3.5) |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
2 A |
e2 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
Texas Instruments |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.15 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
175 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-204AC |
110 A |
260 |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
PIN/PEG |
3 |
NO |
SQUARE |
UNSPECIFIED |
COMMON ANODE, 2 ELEMENTS |
12 A |
1.35 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
400 V |
POWER ULTRA FAST RECOVERY |
TIN LEAD |
S-XSFM-P3 |
Not Qualified |
1 |
TO-254AA |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
SINGLE |
PIN/PEG |
3 |
NO |
SQUARE |
UNSPECIFIED |
COMMON ANODE, 2 ELEMENTS |
12 A |
1.35 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
POWER ULTRA FAST RECOVERY |
TIN LEAD |
S-XSFM-P3 |
Not Qualified |
1 |
TO-254AA |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.4 V |
1 |
POST/STUD MOUNT |
Rectifier Diodes |
1600 V |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
Not Qualified |
1 |
DO-203AB |
1250 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
Transys Electronics |
RECTIFIER DIODE |
NO |
SINGLE |
70 A |
1.4 V |
1 |
Rectifier Diodes |
1600 V |
180 Cel |
1 |
1000 A |
|||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
75 A |
.8 V |
.055 us |
SCHOTTKY |
25000 uA |
2 |
200 V |
FLANGE MOUNT |
Other Diodes |
200 V |
150 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, SNUBBER DIODE, LOW NOISE, LOW LEAKAGE CURRENT |
1 |
600 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
1.2 V |
.028 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
150 V |
150 Cel |
ULTRA FAST SOFT RECOVERY |
TIN |
R-PSFM-T3 |
CATHODE |
Not Qualified |
1 |
TO-220AB |
160 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
BOTTOM |
WIRE |
5 |
NO |
ROUND |
METAL |
SEPARATE, 2 ELEMENTS |
.05 A |
1.5 V |
.000001 uA |
2 |
CYLINDRICAL |
150 Cel |
-55 Cel |
MATTE TIN |
O-MBCY-W5 |
1 |
SUBSTRATE |
Not Qualified |
.5 W |
1 |
TO-78 |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
Wolfspeed |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
33 A |
1.8 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
166 W |
FREE WHEELING DIODE |
1 |
TO-220AC |
SILICON CARBIDE |
AEC-Q101 |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 A |
3 V |
2 us |
5 uA |
1 |
3000 V |
LONG FORM |
3000 V |
175 Cel |
HIGH VOLTAGE |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
15 A |
e3 |
SILICON |
||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
200 uA |
1 |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
TIN |
R-PSFM-T2 |
CATHODE |
129 W |
PD-CASE |
1 |
TO-220AC |
637 A |
e3 |
SILICON CARBIDE |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
1.2 V |
.06 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
400 V |
175 Cel |
POWER |
-65 Cel |
Tin (Sn) |
R-PSFM-T3 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
TO-218AC |
150 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
Rectron |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||
|
Semikron International |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
82 A |
1.55 V |
4500 uA |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN/SILVER |
R-XUFM-X2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY |
1 |
2000 A |
e3/e4 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.86 V |
SCHOTTKY |
1 uA |
1 |
100 V |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
POWER |
MATTE TIN |
O-PALF-W2 |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-41 |
50 A |
e3 |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.59 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
150 Cel |
POWER |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
AVALANCHE CAPABILITY |
1 |
DO-15 |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
1.5 V |
SCHOTTKY |
60 uA |
1 |
FLANGE MOUNT |
1200 V |
175 Cel |
POWER |
-40 Cel |
MATTE TIN |
R-PSFM-T2 |
CATHODE |
1 |
TO-220AC |
60 A |
e3 |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.88 V |
SCHOTTKY |
250 uA |
2 |
FLANGE MOUNT |
200 V |
175 Cel |
EFFICIENCY |
-40 Cel |
MATTE TIN |
R-PSFM-T3 |
1 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
TO-220AB |
260 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 A |
1 |
FLANGE MOUNT |
1200 V |
150 Cel |
HIGH VOLTAGE |
-40 Cel |
MATTE TIN OVER NICKEL |
R-PSFM-T2 |
CATHODE |
1 |
475 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
UPPER |
SOLDER LUG |
1 |
NO |
ROUND |
METAL |
SINGLE |
70 A |
1.85 V |
.15 us |
100 uA |
1 |
POST/STUD MOUNT |
1000 V |
125 Cel |
FAST RECOVERY |
-40 Cel |
TIN OVER NICKEL |
O-MUPM-D1 |
CATHODE |
FREE WHEELING DIODE |
1 |
DO-203AB |
870 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.75 V |
SCHOTTKY |
1000 uA |
2 |
FLANGE MOUNT |
45 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN OVER NICKEL |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE |
1 |
TO-247AC |
2900 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
150 Cel |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
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|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
1000 V |
150 Cel |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-204AL |
e3 |
10 |
260 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.2 V |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
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|
Taiwan Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
50 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
DO-201AD |
200 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 A |
1 V |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1200 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
R-PSFM-T2 |
CATHODE |
Not Qualified |
1 |
TO-247AC |
475 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.