Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.225 A |
1.25 V |
.05 us |
.1 uA |
2 |
SMALL OUTLINE |
Rectifier Diodes |
250 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
HALOGEN FREE |
TO-236AB |
2.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.25 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
600 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-214AC |
30 A |
e3 |
40 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.24 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
150 Cel |
TIN |
R-PDSO-F2 |
1 |
Not Qualified |
.35 W |
1 |
10 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
10 uA |
1 |
400 V |
SMALL OUTLINE |
400 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
DO-214AC |
400 V |
30 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.62 V |
SCHOTTKY |
500 uA |
1 |
100 V |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
175 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-214AA |
50 A |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 3 ELEMENTS |
.2 A |
.715 V |
.004 us |
50 uA |
3 |
80 V |
SMALL OUTLINE |
Other Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G6 |
1 |
Not Qualified |
.25 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.3 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
5 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.005 us |
SCHOTTKY |
2 |
SMALL OUTLINE |
30 V |
150 Cel |
TIN |
R-PDSO-G3 |
1 |
.23 W |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.22 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
20 V |
125 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
EXTREME FAST SWITCHING, FREE WHEELING DIODE |
1 |
5.5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.3 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
5 A |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
LONG FORM |
O-LELF-R2 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.3 V |
.035 us |
10 uA |
1 |
600 V |
SMALL OUTLINE |
600 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
100 A |
e3 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.68 V |
.035 us |
5 uA |
1 |
600 V |
SMALL OUTLINE |
600 V |
150 Cel |
SUPER FAST RECOVERY |
-55 Cel |
R-PDSO-C2 |
1 |
DO-214AA |
90 A |
SILICON |
|||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
21 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
SMALL OUTLINE |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSSO-G2 |
1 |
CATHODE |
283 W |
HIGH RELIABILITY, PD-CASE |
1 |
TO-263AB |
90 A |
e3 |
30 |
260 |
SILICON CARBIDE |
AEC-Q101 |
||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
.05 us |
15 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
HIGH VOLTAGE |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
250 V |
1 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Temic Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
.05 us |
.1 uA |
1 |
LONG FORM |
250 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
1 A |
SILICON |
|||||||||||||||||||||||||||||||
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.6 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
POWER |
TIN LEAD |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE |
1 |
75 A |
e0 |
235 |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.8 V |
SCHOTTKY |
5 uA |
1 |
SMALL OUTLINE |
200 V |
175 Cel |
FAST RECOVERY POWER |
-40 Cel |
R-PDSO-F2 |
FREE WHEELING DIODE |
1 |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
1 V |
.004 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.2 W |
1 |
.35 A |
e3 |
10 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.35 A |
.6 V |
.01 us |
SCHOTTKY |
5 uA |
1 |
30 V |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
Not Qualified |
.2 W |
1 |
40 V |
1.5 A |
e3 |
30 |
260 |
SILICON |
MIL-STD-202 |
|||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.86 V |
SCHOTTKY |
1000 uA |
1 |
SMALL OUTLINE |
Rectifier Diodes |
200 V |
150 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
FREE WHEELING DIODE |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.65 V |
SCHOTTKY |
50 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
NONE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
25 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.75 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
LOW POWER LOSS, FREE WHEELING DIODE |
1 |
DO-214AA |
50 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
.37 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
R-PDSO-F2 |
HIGH RELIABILITY |
1 |
.2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
7.5 A |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
45 V |
175 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
CATHODE |
Not Qualified |
1 |
150 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.07 A |
.41 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
1 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.3 V |
.15 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.75 V |
SCHOTTKY |
500 uA |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
LOW POWER LOSS |
1 |
DO-214AB |
70 A |
e3 |
30 |
250 |
SILICON |
||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.215 A |
.715 V |
.006 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
-65 Cel |
R-PDSO-G3 |
.2 W |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.9 V |
SCHOTTKY |
500 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PDSO-C2 |
1 |
FREE WHEELING DIODE |
1 |
DO-214AB |
50 A |
SILICON |
|||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.07 A |
.41 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
70 V |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.23 W |
1 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
1.5 V |
.12 us |
AVALANCHE |
1 |
SMALL OUTLINE |
Rectifier Diodes |
1000 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AC |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.8 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
125 Cel |
TIN |
R-PDSO-G2 |
1 |
Not Qualified |
1 |
.6 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Nexperia |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
30 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G2 |
1 |
.357 W |
1 |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.225 A |
.87 V |
.05 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
350 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.35 W |
HIGH RELIABILITY |
4 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
1.1 V |
.05 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
175 V |
150 Cel |
Tin (Sn) |
R-PDSO-G3 |
1 |
Not Qualified |
.35 W |
1 |
2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.67 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
150 V |
175 Cel |
EFFICIENCY |
MATTE TIN |
R-PDSO-C2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-214AC |
75 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
6 A |
.57 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
TO-252AA |
320 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.865 V |
.015 us |
1 |
SMALL OUTLINE |
Rectifier Diodes |
100 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
HIGH RELIABILITY |
1 |
DO-214AC |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Leshan Radio |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.215 A |
.9 V |
3 us |
2 |
SMALL OUTLINE |
Rectifier Diodes |
85 V |
150 Cel |
-65 Cel |
R-PDSO-G3 |
.15 W |
.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.37 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-F2 |
1 |
.95 W |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||||
|
Central Semiconductor |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.8 V |
SCHOTTKY |
1 uA |
1 |
25 V |
SMALL OUTLINE |
Rectifier Diodes |
30 V |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
.25 W |
1 |
30 V |
.75 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
.05 us |
10 uA |
1 |
400 V |
SMALL OUTLINE |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-214AC |
400 V |
30 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.2 A |
.55 V |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
40 V |
125 Cel |
TIN |
R-PDSO-G3 |
1 |
Not Qualified |
ULTRA HIGH SPEED SWITCHING |
TO-236AB |
1 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 3 ELEMENTS |
.2 A |
.715 V |
.004 us |
50 uA |
3 |
80 V |
SMALL OUTLINE |
Other Diodes |
100 V |
150 Cel |
-65 Cel |
TIN |
R-PDSO-F6 |
1 |
Not Qualified |
.18 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.5 V |
.012 us |
SCHOTTKY |
500 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
125 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
LOW POWER LOSS |
1 |
80 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.94 V |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
60 V |
150 Cel |
POWER |
Matte Tin (Sn) - annealed |
R-PDSO-C2 |
1 |
Not Qualified |
1 |
DO-214AB |
75 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.65 V |
SCHOTTKY |
100 uA |
1 |
SMALL OUTLINE |
40 V |
125 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
CATHODE |
.556 W |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.