Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
1.5 V |
.075 us |
10 uA |
1 |
LONG FORM |
250 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.3 W |
HIGH RELIABILITY |
1 |
DO-34 |
1 A |
e0 |
30 |
240 |
SILICON |
||||||||||||||||||||||||||
Eupec & Kg |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
600 V |
150 Cel |
GENERAL PURPOSE |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
160 A |
SILICON |
||||||||||||||||||||||||||||||||||
|
IXYS Corporation |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
3.6 A |
1.25 V |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1200 V |
180 Cel |
GENERAL PURPOSE |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
120 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.15 A |
1.05 V |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-7 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
Sensitron Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
SCHOTTKY |
1 |
LONG FORM |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN LEAD |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-201AD |
96 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
Motorola |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
5 A |
1 V |
.3 us |
25 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
FAST RECOVERY POWER |
-65 Cel |
TIN LEAD |
O-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
300 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Motorola |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
METAL |
SINGLE |
3 A |
1.1 V |
.3 us |
50 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
150 Cel |
FAST RECOVERY POWER |
-65 Cel |
TIN LEAD |
O-MALF-W2 |
CATHODE |
Not Qualified |
1 |
100 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.3 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
EFFICIENCY |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1.25 V |
.3 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
EFFICIENCY |
TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
100 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
Eic Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.7 A |
.55 V |
SCHOTTKY |
5100 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
EFFICIENCY |
-40 Cel |
O-PALF-W2 |
ISOLATED |
HIGH RELIABILITY, LOW POWER LOSS |
1 |
50 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Kyocera |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
.55 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-40 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
40 A |
SILICON |
|||||||||||||||||||||||||||||||
Kyocera |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
.58 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
60 V |
125 Cel |
-40 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
25 A |
SILICON |
|||||||||||||||||||||||||||||||
Kyocera |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
-40 Cel |
O-XALF-W2 |
ISOLATED |
Not Qualified |
1 |
40 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 V |
2 us |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.2 V |
.2 us |
5 uA |
1 |
600 V |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
DO-204AL |
30 A |
e3 |
SILICON |
|||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.8 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
400 V |
175 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
CECC50008-015 |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1.15 V |
4 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1.15 V |
4 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.8 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
175 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
CECC50008-015 |
||||||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
GENERAL PURPOSE |
MATTE TIN |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
200 A |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1 V |
7.5 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
800 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN/SILVER (SN/AG) |
E-LALF-W2 |
ISOLATED |
1 |
100 A |
e2 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
Central Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
PLASTIC/EPOXY |
SINGLE |
3 A |
1 |
LONG FORM |
800 V |
GENERAL PURPOSE |
TIN LEAD |
E-PALF-W2 |
ISOLATED |
Not Qualified |
1 |
125 A |
e0 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.005 A |
36 V |
.08 us |
2 uA |
1 |
8000 V |
LONG FORM |
8000 V |
120 Cel |
HIGH VOLTAGE ULTRA FAST RECOVERY |
-40 Cel |
O-XALF-W2 |
ISOLATED |
1 |
.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.25 V |
.006 us |
50 uA |
1 |
60 V |
LONG FORM |
Rectifier Diodes |
75 V |
175 Cel |
GENERAL PURPOSE |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-204AH |
75 V |
4 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||
National Semiconductor |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.004 us |
1 |
LONG FORM |
50 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
1 V |
.004 us |
.1 uA |
1 |
50 V |
LONG FORM |
Rectifier Diodes |
75 V |
175 Cel |
FAST RECOVERY |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-204AH |
75 V |
2 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.5 V |
1 us |
200 uA |
1 |
LONG FORM |
1650 V |
140 Cel |
GENERAL PURPOSE |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1.5 V |
20 us |
AVALANCHE |
140 uA |
1 |
1500 V |
LONG FORM |
1650 V |
140 Cel |
EFFICIENCY |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2.9 A |
1.78 V |
.15 us |
AVALANCHE |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
1 |
ISOLATED |
1 |
65 A |
e2 |
SILICON |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
.85 V |
.04 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3.5 A |
.89 V |
.03 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
ULTRA FAST RECOVERY |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
90 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1.1 V |
.3 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
FAST SOFT RECOVERY |
-55 Cel |
E-LALF-W2 |
ISOLATED |
1 |
50 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.8 A |
.8 V |
3 us |
AVALANCHE |
1 uA |
1 |
600 V |
LONG FORM |
600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
650 V |
50 A |
SILICON |
IEC-134 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2 A |
1 V |
4 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
Tin/Silver (Sn96.5Ag3.5) |
E-LALF-W2 |
1 |
ISOLATED |
1 |
50 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
Fagor Electronica S Coop |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1 V |
1 uA |
1 |
LONG FORM |
600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
80 A |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
3 A |
1 V |
7.5 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
TIN SILVER |
E-LALF-W2 |
ISOLATED |
1 |
100 A |
e2 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
.95 V |
.05 us |
5 uA |
1 |
200 V |
LONG FORM |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-204AC |
75 A |
e3 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
50 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
400 A |
e3 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.2 A |
.004 us |
1 |
LONG FORM |
50 V |
TIN LEAD |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
DO-35 |
e0 |
SILICON |
MIL-19500/231H |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
.15 A |
1 |
LONG FORM |
175 Cel |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-XALF-W2 |
ISOLATED |
Qualified |
1 |
e0 |
SILICON |
MIL-19500/240J |
|||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.05 V |
.065 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
35 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1.35 V |
.075 us |
1 |
LONG FORM |
Rectifier Diodes |
600 V |
175 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-41 |
35 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
6 A |
.9 V |
2.5 us |
1 |
LONG FORM |
Rectifier Diodes |
400 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
400 A |
e3 |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
2 A |
1 V |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-PALF-W2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-15 |
70 A |
260 |
SILICON |
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Shindengen Electric Manufacturing |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
SINGLE |
2.1 A |
.98 V |
.035 us |
10 uA |
1 |
LONG FORM |
200 V |
150 Cel |
SUPER FAST RECOVERY |
O-XALF-W2 |
ISOLATED |
LOW NOISE |
1 |
60 A |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.49 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE |
1 |
DO-201AD |
120 A |
e3 |
SILICON |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
3 A |
.65 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
EFFICIENCY |
MATTE TIN |
O-PALF-W2 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
DO-201AD |
100 A |
e3 |
SILICON |
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|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
8 A |
.55 V |
SCHOTTKY |
50 uA |
1 |
60 V |
LONG FORM |
60 V |
150 Cel |
GENERAL PURPOSE |
-50 Cel |
O-PALF-W2 |
ISOLATED |
FREE WHEELING DIODE |
1 |
360 A |
10 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.