Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/444 |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
TIN LEAD OVER NICKEL |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||
|
Bourns |
RECTIFIER DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
.004 us |
1 |
SMALL OUTLINE |
100 V |
125 Cel |
-55 Cel |
GOLD |
R-PDSO-R2 |
Not Qualified |
.4 W |
1 |
e4 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
.025 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
HIGH SPEED SWITCH |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.37 V |
.01 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
LOW LEAKAGE CURRENT |
1 |
DO-213AA |
15 A |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
2 us |
1 |
LONG FORM |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
e0 |
SILICON |
MIL-19500/427K |
|||||||||||||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.45 V |
.005 us |
SCHOTTKY |
.5 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
4 A |
e3 |
30 |
235 |
SILICON |
||||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.1 A |
1 V |
SCHOTTKY |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
125 Cel |
-65 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.1 W |
1 |
.75 A |
e3 |
30 |
235 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-XELF-R2 |
1 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
MIL-19500/586F |
||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.34 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
45 V |
125 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
METALLURGICALLY BONDED |
1 |
DO-213AB |
25 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
2 A |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.2 V |
10 uA |
1 |
1000 V |
LONG FORM |
Rectifier Diodes |
1000 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
2.5 A |
.025 us |
1 |
LONG FORM |
150 V |
ULTRA FAST RECOVERY POWER |
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
35 A |
e0 |
SILICON |
MIL-19500/477F |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.8 V |
.004 us |
SCHOTTKY |
2 uA |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
-40 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
ULTRA HIGH SPEED SWITCH |
1 |
5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
250 V |
175 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
1 |
5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.33 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
25 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
2 A |
e3 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.32 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
20 V |
125 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
25 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
DUAL |
WRAP AROUND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.15 A |
.004 us |
1 |
SMALL OUTLINE |
75 V |
175 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-R2 |
1 |
.5 W |
HIGH RELIABILITY |
1 |
e3 |
SILICON |
||||||||||||||||||||||||||||||
|
Diotec Semiconductor Ag |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
.9 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
150 Cel |
-50 Cel |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
DO-213AB |
30 A |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1.2 V |
.005 us |
.5 uA |
1 |
75 V |
LONG FORM |
75 V |
175 Cel |
SWITCHING |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
.5 W |
METALLURGICALLY BONDED |
1 |
DO-213AA |
100 V |
e3 |
SILICON |
MIL-19500 |
||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
1.1 V |
10 uA |
1 |
400 V |
LONG FORM |
Rectifier Diodes |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT |
1 |
DO-213AB |
30 A |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||
|
STMicroelectronics |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.85 V |
SCHOTTKY |
500 uA |
1 |
LONG FORM |
Rectifier Diodes |
40 V |
125 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
50 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
150 V |
175 Cel |
-65 Cel |
TIN LEAD OVER NICKEL |
O-LELF-R2 |
ISOLATED |
HIGH RELIABILITY |
1 |
e0 |
SILICON |
|||||||||||||||||||||||||||||||
|
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
.875 V |
.025 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
150 V |
175 Cel |
ULTRA FAST RECOVERY |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
ISOLATED |
HIGH RELIABLITY |
1 |
35 A |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Rectron |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
MATTE TIN |
O-PELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
e3 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
400 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
.3 A |
1.2 V |
.005 us |
.5 uA |
1 |
LONG FORM |
75 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-XELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
2.5 A |
e0 |
SILICON |
MIL-19500/578E |
|||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.033 A |
SCHOTTKY |
1 |
LONG FORM |
50 V |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AA |
e0 |
SILICON |
MIL-19500/444 |
|||||||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.125 A |
.05 us |
1 |
LONG FORM |
120 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
50 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
20 V |
125 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
Multicomp Pro |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1 |
LONG FORM |
50 V |
175 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
1 |
DO-213AA |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
175 Cel |
Matte Tin (Sn) - annealed |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-213AC |
4 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
45 V |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
METALLURGICALLY BONDED |
1 |
DO-213AB |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.24 V |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
5 A |
e2 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
LONG FORM |
O-LELF-R2 |
Not Qualified |
||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.25 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
Rectifier Diodes |
200 V |
175 Cel |
TIN |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
1 |
5 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.05 us |
1 |
LONG FORM |
250 V |
200 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
.5 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
1 V |
.004 us |
5 uA |
1 |
LONG FORM |
Rectifier Diodes |
100 V |
200 Cel |
Tin (Sn) |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.5 W |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.15 A |
.004 us |
1 |
LONG FORM |
100 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
.5 W |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
3 A |
.03 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY |
TIN LEAD |
O-LELF-R2 |
ISOLATED |
Not Qualified |
HIGH RELIABILITY, METALLURGICALLY BONDED |
1 |
125 A |
e0 |
SILICON |
||||||||||||||||||||||||||||||||
Microchip Technology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
2.5 A |
.025 us |
1 |
LONG FORM |
ULTRA FAST RECOVERY POWER |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
ISOLATED |
Qualified |
1 |
35 A |
e0 |
SILICON |
MIL-19500/477F |
||||||||||||||||||||||||||||||||
|
Panjit International |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
5 uA |
1 |
400 V |
LONG FORM |
400 V |
150 Cel |
-65 Cel |
O-PELF-R2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
30 A |
SILICON |
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|
Diodes Incorporated |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
1 |
LONG FORM |
Rectifier Diodes |
1000 V |
150 Cel |
MATTE TIN |
O-PELF-R2 |
1 |
ISOLATED |
Not Qualified |
1 |
30 A |
e3 |
260 |
SILICON |
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Vishay Telefunken |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
LONG FORM |
O-LELF-R2 |
Not Qualified |
DO-213AA |
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|
Vishay Intertechnology |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.2 A |
.24 V |
.005 us |
SCHOTTKY |
1 |
LONG FORM |
Rectifier Diodes |
30 V |
125 Cel |
TIN SILVER |
O-LELF-R2 |
1 |
ISOLATED |
Not Qualified |
.2 W |
1 |
DO-213AA |
.6 A |
e2 |
30 |
260 |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.