Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.004 A |
.1 us |
1 |
LONG FORM |
14000 V |
120 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.32 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.41 A |
.05 us |
AVALANCHE |
1 |
LONG FORM |
250 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.1 A |
AVALANCHE |
1 |
LONG FORM |
3000 V |
180 Cel |
-65 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC-134 |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
AVALANCHE |
1 |
LONG FORM |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
.008 us |
1 |
LONG FORM |
100 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.5 us |
1 |
DISK BUTTON |
1500 V |
GENERAL PURPOSE |
O-LADB-W2 |
ISOLATED |
Not Qualified |
1 |
60 A |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.48 A |
12 V |
.175 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
5000 V |
175 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
14 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.3 A |
.3 us |
1 |
LONG FORM |
2000 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.43 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
50 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.45 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
1400 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
IEC-134 |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
AVALANCHE |
1 |
LONG FORM |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2.08 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
ULTRA FAST SOFT RECOVERY |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
45 A |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.36 A |
23.9 V |
.35 us |
AVALANCHE |
1 |
LONG FORM |
Rectifier Diodes |
10000 V |
175 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
15 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.45 A |
.15 us |
1 |
LONG FORM |
300 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.003 A |
88 V |
.1 us |
1 |
LONG FORM |
Rectifier Diodes |
24000 V |
120 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
.03 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.3 A |
.3 us |
1 |
LONG FORM |
1600 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.45 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
1200 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
800 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1.6 A |
1.35 V |
.1 us |
AVALANCHE |
5 uA |
1 |
LONG FORM |
600 V |
175 Cel |
FAST SOFT RECOVERY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
30 A |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.3 A |
1 V |
.006 us |
.1 uA |
1 |
LONG FORM |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
1 |
DO-35 |
4 A |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 us |
1 |
DISK BUTTON |
1500 V |
GENERAL PURPOSE |
O-LADB-W2 |
ISOLATED |
Not Qualified |
1 |
50 A |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.45 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
1200 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.05 A |
5 us |
1 |
LONG FORM |
3000 V |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.005 A |
.06 us |
AVALANCHE |
1 |
LONG FORM |
10000 V |
120 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
2.08 A |
.15 us |
AVALANCHE |
1 |
LONG FORM |
1400 V |
ULTRA FAST SOFT RECOVERY |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
45 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
1.25 V |
.05 us |
.1 uA |
1 |
LONG FORM |
250 V |
175 Cel |
PURE TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.4 W |
1 |
DO-35 |
9 A |
SILICON |
|||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
1.5 V |
.3 us |
AVALANCHE |
1 uA |
1 |
LONG FORM |
1000 V |
175 Cel |
FAST SOFT RECOVERY |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
70 A |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.75 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.67 A |
.5 us |
AVALANCHE |
1 |
LONG FORM |
1400 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
SCHOTTKY |
1 |
LONG FORM |
20 V |
125 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.7 A |
.3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.25 V |
.075 us |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER |
O-PALF-W2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
3 A |
.1 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
FAST SOFT RECOVERY |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
65 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.05 A |
.2 us |
1 |
LONG FORM |
1800 V |
120 Cel |
E-LALF-W2 |
ISOLATED |
Not Qualified |
LEAKAGE CURRENT IS NOT AT 25 DEG C |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.7 A |
.25 us |
AVALANCHE |
1 |
LONG FORM |
600 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
1.1 V |
.004 us |
.2 uA |
1 |
LONG FORM |
Rectifier Diodes |
15 V |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.35 W |
1 |
DO-35 |
2 A |
SILICON |
|||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
AVALANCHE |
1 |
LONG FORM |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.1 A |
1.1 V |
.004 us |
.2 uA |
1 |
LONG FORM |
60 V |
200 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.35 W |
1 |
DO-35 |
4 A |
SILICON |
||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.65 A |
.25 us |
1 |
LONG FORM |
1200 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.37 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ELLIPTICAL |
GLASS |
SINGLE |
.005 A |
.2 us |
1 |
LONG FORM |
10000 V |
E-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.37 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
1000 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.075 A |
.008 us |
1 |
LONG FORM |
100 V |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
1 |
DO-35 |
SILICON |
||||||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.55 A |
.35 us |
AVALANCHE |
1 |
LONG FORM |
7500 V |
165 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 A |
1 |
LONG FORM |
50 V |
175 Cel |
-65 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
.25 A |
1 V |
1.5 us |
.001 uA |
1 |
LONG FORM |
125 V |
175 Cel |
PURE TIN |
O-LALF-W2 |
1 |
ISOLATED |
Not Qualified |
.3 W |
1 |
DO-34 |
4 A |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.