Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
4 A |
.62 V |
SCHOTTKY |
150 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-XBCC-N2 |
ANODE |
LOW LEAKAGE CURRENT |
1 |
28 A |
e4 |
SILICON |
MIL-STD-202 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.715 V |
.004 us |
1 |
CHIP CARRIER |
Rectifier Diodes |
75 V |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
.25 W |
HIGH RELIABILITY |
1 |
2 A |
e4 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.015 us |
AVALANCHE |
1 |
CHIP CARRIER |
20 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
FREE WHEELING DIODE |
1 |
e4 |
260 |
SILICON |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
TIN SILVER |
R-XBCC-N2 |
1 |
1 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1 |
CHIP CARRIER |
20 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
1 |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
10 A |
e4 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.75 V |
.00299 us |
SCHOTTKY |
2 uA |
2 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-PBCC-N3 |
1 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
7 A |
e4 |
260 |
SILICON |
|||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
AVALANCHE |
1 |
CHIP CARRIER |
10 V |
150 Cel |
-65 Cel |
NICKEL PALLADIUM GOLD |
R-PBCC-N2 |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
e4 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.0016 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
.25 W |
FREE WHEELING DIODE |
1 |
2 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
1 |
CHIP CARRIER |
40 V |
150 Cel |
-55 Cel |
MATTE TIN |
R-PBCC-N2 |
1 |
1 |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.03 A |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
125 Cel |
R-PBCC-N2 |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-PBCC-N2 |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-PBCC-N2 |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.37 V |
SCHOTTKY |
7 uA |
1 |
10 V |
CHIP CARRIER |
30 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
R-PBCC-N2 |
.25 W |
LOW LEAKAGE CURRENT, FREE WHEELING DIODE |
1 |
30 V |
2 A |
e3 |
260 |
SILICON |
AEC-Q101; MIL-STD-202; IATF-16949 |
|||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
.7 V |
SCHOTTKY |
20 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
R-XBCC-N2 |
CATHODE |
1 |
3 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.47 V |
SCHOTTKY |
300 uA |
1 |
30 V |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.85 V |
SCHOTTKY |
2 |
CHIP CARRIER |
Rectifier Diodes |
120 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN LEAD |
R-XBCC-N4 |
CATHODE |
Not Qualified |
1 |
110 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.5 A |
.4 V |
SCHOTTKY |
500 uA |
1 |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.81 V |
SCHOTTKY |
15 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
R-PBCC-N2 |
1 |
2 A |
SILICON |
||||||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
20 A |
.98 V |
.035 us |
2 |
CHIP CARRIER |
Rectifier Diodes |
200 V |
150 Cel |
EFFICIENCY |
-40 Cel |
TIN LEAD |
R-XBCC-N4 |
CATHODE |
Not Qualified |
LOW NOISE |
1 |
110 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.47 V |
SCHOTTKY |
300 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1.5 A |
.64 V |
SCHOTTKY |
25 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
R-PBCC-N2 |
.9 W |
1 |
5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
20 A |
1.8 V |
.035 us |
2 |
CHIP CARRIER |
Rectifier Diodes |
400 V |
150 Cel |
EFFICIENCY |
-40 Cel |
TIN LEAD |
R-XBCC-N4 |
CATHODE |
Not Qualified |
LOW NOISE |
1 |
110 A |
e0 |
SILICON |
|||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-XBCC-N2 |
CATHODE |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.55 V |
SCHOTTKY |
2 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN LEAD |
R-XBCC-N4 |
CATHODE |
Not Qualified |
1 |
330 A |
e0 |
SILICON |
||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
125 Cel |
R-PBCC-N2 |
CATHODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.47 V |
SCHOTTKY |
300 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-XBCC-N2 |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.5 V |
SCHOTTKY |
30 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
100 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.15 W |
PD-CASE |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.47 V |
SCHOTTKY |
300 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
2 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.5 V |
SCHOTTKY |
30 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
100 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.15 W |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
SCHOTTKY |
1 |
CHIP CARRIER |
125 Cel |
R-PBCC-N2 |
CATHODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.5 V |
SCHOTTKY |
30 uA |
1 |
30 V |
CHIP CARRIER |
Rectifier Diodes |
30 V |
100 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.15 W |
PD-CASE |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
.57 V |
SCHOTTKY |
25 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
10 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.6 V |
SCHOTTKY |
5 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
100 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.15 W |
1 |
1 A |
SILICON |
||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
.45 V |
SCHOTTKY |
500 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
CATHODE |
1 |
3 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-XBCC-N2 |
Not Qualified |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1 A |
SCHOTTKY |
1 |
CHIP CARRIER |
40 V |
125 Cel |
R-XBCC-N2 |
CATHODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.6 V |
SCHOTTKY |
5 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
100 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.15 W |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-XBCC-N2 |
CATHODE |
Not Qualified |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
125 Cel |
R-XBCC-N2 |
Not Qualified |
.15 W |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.5 A |
.4 V |
SCHOTTKY |
500 uA |
1 |
CHIP CARRIER |
30 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
4 |
YES |
RECTANGULAR |
UNSPECIFIED |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.47 V |
SCHOTTKY |
2 |
CHIP CARRIER |
Rectifier Diodes |
30 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N4 |
CATHODE |
Not Qualified |
LOW NOISE |
1 |
330 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
.5 V |
SCHOTTKY |
30 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
100 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XBCC-N2 |
.15 W |
PD-CASE |
1 |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.2 A |
SCHOTTKY |
1 |
CHIP CARRIER |
32 V |
125 Cel |
R-XBCC-N2 |
Not Qualified |
.15 W |
1 |
SILICON |
|||||||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
.5 A |
.6 V |
SCHOTTKY |
50 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
1 |
2 A |
30 |
260 |
SILICON |
||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.5 A |
.55 V |
SCHOTTKY |
200 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
5 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.5 A |
.64 V |
SCHOTTKY |
25 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
150 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
.9 W |
1 |
5 A |
SILICON |
||||||||||||||||||||||||||||||
|
Toshiba |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1.5 A |
.55 V |
SCHOTTKY |
200 uA |
1 |
40 V |
CHIP CARRIER |
40 V |
125 Cel |
GENERAL PURPOSE |
R-XBCC-N2 |
1 |
5 A |
SILICON |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.