2 Microwave Mixer & Detector Diodes 715

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals (1)
    • 2
    • 1
    • 10
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

BA89202VH6127XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-F2

NOT SPECIFIED

NOT SPECIFIED

SILICON

AEC-Q101

SMS7630-079LF

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.05 A

.24 V

.3 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

1 V

ZERO BARRIER

150 Cel

MATTE TIN

R-PDSO-F2

1

Not Qualified

.075 W

LOW NOISE

e3

40

260

SILICON

1SS390SMT2R

ROHM

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

.1 A

1.2 pF

.01 uA

1

SMALL OUTLINE

150 Cel

TIN

R-PDSO-F2

HIGH RELIABILITY

e3

SILICON

MMSD301T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.2 A

.6 V

1.5 pF

SCHOTTKY

.2 uA

1

25 V

SMALL OUTLINE

30 V

125 Cel

EFFICIENCY

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.225 W

1

30 V

e3

30

260

SILICON

AEC-Q101

BAT6302VH6327XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

LOW BARRIER

150 Cel

MATTE TIN

R-PDSO-F2

1

.1 W

HIGH SPEED

e3

SILICON

BAT1503WE6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.35 pF

SCHOTTKY

1

SMALL OUTLINE

LOW BARRIER

150 Cel

MATTE TIN

R-PDSO-G2

1

.1 W

LOW NOISE

e3

SILICON

MMSD701T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.225 W

e3

30

260

SILICON

BAT62-03W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.6 pF

SCHOTTKY

1

SMALL OUTLINE

Other Diodes

LOW BARRIER

150 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.1 W

e3

SILICON

DB2J31400L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.03 A

.4 V

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-F2

NOT SPECIFIED

NOT SPECIFIED

SILICON

MBD301

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

TO-92

e0

235

SILICON

5082-2835

Broadcom

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.01 A

.34 V

1 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

8 V

150 Cel

-60 Cel

TIN LEAD

O-LALF-W2

1

ISOLATED

Not Qualified

e0

SILICON

DB2J20100L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.5 A

.4 V

1

SMALL OUTLINE

Rectifier Diodes

20 V

85 Cel

-40 Cel

R-PDSO-F2

3 A

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAT62-03WE6327XT

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.02 A

1 V

.6 pF

SCHOTTKY

10 uA

1

40 V

SMALL OUTLINE

LOW BARRIER

150 Cel

R-PDSO-G2

.1 W

TR, 7 INCH : 3000

SILICON

BA592E6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

e3

SILICON

SMS3923-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND TO C BAND

.05 A

1 V

1.3 pF

SCHOTTKY

.5 uA

1

15 V

CHIP CARRIER

150 Cel

-65 Cel

R-PBCC-N2

1

Not Qualified

.075 W

20 V

260

SILICON

6000 GHz

BA891,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

1 V

1.05 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Rectifier Diodes

35 V

150 Cel

-65 Cel

TIN

R-PDSO-F2

1

Not Qualified

.715 W

e3

30

260

SILICON

MBD301G

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

-55 Cel

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

TO-226AC

e1

260

SILICON

DB2J50100L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

SCHOTTKY

1

SMALL OUTLINE

85 Cel

-40 Cel

TIN BISMUTH

R-PDSO-F2

1

e6

SILICON

SMS7621-079LF

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.05 A

.32 V

.25 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

2 V

LOW BARRIER

150 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

.075 W

LOW NOISE

e3

40

260

SILICON

DB2S31600L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

.55 V

1

SMALL OUTLINE

Rectifier Diodes

30 V

85 Cel

-40 Cel

R-PDSO-F2

1

1 A

SILICON

BAT6202WH6327XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.02 A

1 V

.6 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

40 V

LOW BARRIER

150 Cel

MATTE TIN

R-PDSO-F2

.1 W

e3

SILICON

MMDL301T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.45 V

1.5 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.2 W

e3

30

260

SILICON

MMDL770T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

70 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.2 W

e3

30

260

SILICON

HSCH-9161

Broadcom

MIXER DIODE

DUAL

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

7500 ohm

MILLIMETER WAVE BAND

1

MICROWAVE

Other Diodes

ZERO BARRIER

175 Cel

S-CDMW-F2

Not Qualified

1800 ohm

220

GALLIUM ARSENIDE

SMS3922-079

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.03 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN LEAD

R-PDSO-F2

1

Not Qualified

.075 W

e0

220

SILICON

SMS7630-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.05 A

.12 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

1 V

ZERO BARRIER

175 Cel

R-PBCC-N2

1

Not Qualified

.25 W

30

260

SILICON

DB2730800L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

85 Cel

-40 Cel

R-PDSO-F2

NOT SPECIFIED

NOT SPECIFIED

SILICON

MA4E2037

TE Connectivity

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

.06 pF

SCHOTTKY

1

MICROWAVE

Microwave Mixer Diodes

R-XDMW-F2

Not Qualified

LOW NOISE

GALLIUM ARSENIDE

BA423L

NXP Semiconductors

MIXER DIODE

END

NO LEAD

2

YES

ROUND

GLASS

SINGLE

3.5 pF

1

LONG FORM

O-LELF-N2

ISOLATED

Not Qualified

SILICON

BA591,115

NXP Semiconductors

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.05 pF

1

SMALL OUTLINE

Varactors

35 V

150 Cel

-65 Cel

TIN

R-PDSO-G2

1

Not Qualified

.5 W

.8 pF

e3

30

260

SILICON

BAT62-02W

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.04 A

1 V

.6 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

40 V

LOW BARRIER

150 Cel

R-PDSO-F2

1

Not Qualified

.1 W

SILICON

DB2730900L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

85 Cel

-40 Cel

R-PDSO-F2

NOT SPECIFIED

NOT SPECIFIED

SILICON

SMS3922-079LF

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND TO C BAND

.05 A

.45 V

1.03 pF

SCHOTTKY

.1 uA

1

1 V

SMALL OUTLINE

150 Cel

-65 Cel

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.075 W

8 V

e3

40

260

SILICON

6000 GHz

DB2X20100L

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

85 Cel

-40 Cel

R-PDSO-F2

NOT SPECIFIED

NOT SPECIFIED

SILICON

MMDL101T1G

Onsemi

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.6 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

7 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.2 W

LOW NOISE

e3

30

260

SILICON

5082-2835#T25

Broadcom

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

LONG FORM

TIN LEAD

O-LALF-W2

1

ISOLATED

Not Qualified

e0

SILICON

5082-2835#T50

Broadcom

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

LONG FORM

TIN LEAD

O-LALF-W2

1

ISOLATED

Not Qualified

e0

SILICON

BAT1502LRHE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.35 pF

SCHOTTKY

1

CHIP CARRIER

LOW BARRIER

150 Cel

GOLD

R-XBCC-N2

1

.1 W

LOW NOISE

e4

SILICON

BAT1502ELE6327XTMA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.24 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

BAT1502ELSE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-XBCC-N2

1

.1 W

4 V

e4

SILICON

BAT2402LSE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

MA40264

M/a-com Technology Solutions

MIXER DIODE

DUAL

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

X BAND

SCHOTTKY

1

1 W

MICROWAVE

LOW BARRIER

.15 W

S-CDMW-F2

Not Qualified

SILICON

SMS7630-061

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

SCHOTTKY

1

CHIP CARRIER

ZERO BARRIER

R-PBCC-N2

1

Not Qualified

.075 W

40

260

SILICON

DB2J314

Panasonic

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

.03 A

.4 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

30 V

125 Cel

R-PDSO-F2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

DME2957-000

Skyworks Solutions

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

X BAND

.3 pF

SCHOTTKY

1

MICROWAVE

Microwave Mixer Diodes

MEDIUM BARRIER

R-CDMW-F2

1

6 dB

ISOLATED

Not Qualified

8 GHz

30

260

SILICON

12 GHz

MSS20-141-B10D

M/a-com Technology Solutions

MIXER DIODE

DUAL

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

KA BAND

.035 A

.08 pF

SCHOTTKY

1

0 V

MICROWAVE

ZERO BARRIER

150 Cel

-65 Cel

S-CDMW-F2

Not Qualified

.1 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

40 GHz

MSS20,141-B10D

Cobham Plc

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6000 ohm

KA BAND

.08 pF

SCHOTTKY

1

MICROWAVE

Other Diodes

ZERO BARRIER

150 Cel

.1 W

R-XDMW-F2

Not Qualified

LOW NOISE

2000 ohm

59 dBm

NOT SPECIFIED

NOT SPECIFIED

SILICON

40 GHz

1PS79SB17,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

150 Cel

TIN

R-PDSO-F2

1

Not Qualified

e3

30

260

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84