RECTANGULAR Microwave Mixer & Detector Diodes 1,585

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape (1)
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

BAT63E6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

LOW BARRIER

R-PDSO-G4

ANODE

Not Qualified

SILICON

BAT68-05E6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.15 W

SILICON

BAT68-04E6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.34 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

8 V

150 Cel

MATTE TIN

R-PDSO-G3

Not Qualified

.15 W

e3

SILICON

BAT14-077S

Infineon Technologies

MIXER DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

W BAND

SCHOTTKY

1

GRID ARRAY

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

R-PBGA-B4

Not Qualified

.02 W

SILICON

80 GHz

BAT62-02LS

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1 V

.6 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

40 V

LOW BARRIER

150 Cel

MATTE TIN

R-XBCC-N2

Not Qualified

.1 W

e3

SILICON

BAT17-05W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN

R-PDSO-G3

1

Not Qualified

.15 W

e3

SILICON

BAT17-04W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN

R-PDSO-G3

1

Not Qualified

.15 W

e3

SILICON

BAT1705WE6327XT

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

.15 W

SILICON

BAT68-07W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.5 V

1 pF

SCHOTTKY

.1 uA

2

1 V

SMALL OUTLINE

Other Diodes

8 V

150 Cel

-65 Cel

R-PDSO-G4

1

CATHODE

Not Qualified

.15 W

SILICON

BAT62E6327XT

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

.02 A

1 V

.6 pF

SCHOTTKY

10 uA

2

40 V

SMALL OUTLINE

LOW BARRIER

150 Cel

R-PDSO-G4

.1 W

TR, 7 INCH : 3000

SILICON

BAT17W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

.15 W

e0

SILICON

BAT17-05WE6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.35 V

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

125 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.15 W

e3

260

SILICON

BAT68-06E6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.34 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

8 V

150 Cel

Matte Tin (Sn)

R-PDSO-G3

Not Qualified

.15 W

e3

SILICON

BAT68-03WE6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

SMALL OUTLINE

150 Cel

MATTE TIN

R-PDSO-G2

Not Qualified

.15 W

e3

SILICON

BAT63-099R

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

VERY HIGH FREQUENCY

.6 pF

SCHOTTKY

4

SMALL OUTLINE

R-PDSO-G4

ANODE

Not Qualified

SILICON

BAT68W

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

.15 W

e0

SILICON

BAT62-02V

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

SMALL OUTLINE

LOW BARRIER

150 Cel

MATTE TIN

R-PDSO-F2

1

.1 W

e3

SILICON

BAT14-099E6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.35 pF

SCHOTTKY

2

SMALL OUTLINE

MEDIUM BARRIER

R-PDSO-G4

CATHODE

Not Qualified

.1 W

SILICON

BA89202VH6433TR

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-F2

SILICON

AEC-Q101

BAT68-08S

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.34 V

1 pF

SCHOTTKY

1.2 uA

3

1 V

SMALL OUTLINE

Other Diodes

8 V

150 Cel

-55 Cel

R-PDSO-G6

1

Not Qualified

.15 W

SILICON

BAT6806E6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

150 Cel

R-PDSO-G3

.15 W

SILICON

BAT17-05E6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.35 V

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

150 Cel

R-PDSO-G3

Not Qualified

.15 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAT68-06

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

R-PDSO-G3

1

Not Qualified

.15 W

SILICON

BAT1704WE6327HTSA1

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

.15 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAT68-07

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN LEAD

R-PDSO-G4

CATHODE

Not Qualified

.15 W

e0

SILICON

BAT15-02V

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.35 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

LOW BARRIER

150 Cel

MATTE TIN

R-PDSO-F2

Not Qualified

.1 W

LOW NOISE

e3

SILICON

BAT1502ELSE6433XTMA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

R-PBCC-N2

.1 W

4 V

SILICON

BAT17-04WE6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.35 V

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

150 Cel

R-PDSO-G3

Not Qualified

.15 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAT14-099RE6433

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

CROSSOVER RING, 4 ELEMENTS

SCHOTTKY

4

SMALL OUTLINE

MEDIUM BARRIER

R-PDSO-G4

ANODE AND CATHODE

Not Qualified

.1 W

SILICON

BAT15-099

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.35 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

LOW BARRIER

150 Cel

TIN

R-PDSO-G4

1

CATHODE

Not Qualified

.1 W

LOW NOISE

e3

SILICON

12 GHz

BA892H6127XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

e3

SILICON

AEC-Q101

BAT1502LSE6433XTMA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

BAT17-04E6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.35 V

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.15 W

e3

260

SILICON

BAT68-06E6327

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.34 V

1 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

8 V

150 Cel

MATTE TIN

R-PDSO-G3

1

Not Qualified

.15 W

e3

260

SILICON

BAT17-06

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.75 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

R-PDSO-G3

1

7 dB

Not Qualified

.15 W

SILICON

BAT68-04

Infineon Technologies

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

150 Cel

TIN

R-PDSO-G3

1

Not Qualified

.15 W

e3

SILICON

ZC2811M

Diodes Incorporated

MIXER DIODE

SINGLE

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.2 pF

SCHOTTKY

1

SMALL OUTLINE

R-PSSO-G2

Not Qualified

.25 W

SILICON

ZC2813ETA

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1.2 pF

SCHOTTKY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

LOW NOISE

SILICON

ZC2811N

Diodes Incorporated

MIXER DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.2 pF

SCHOTTKY

1

IN-LINE

R-PSIP-W2

Not Qualified

.25 W

SILICON

ZC2812ETA

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1.2 pF

SCHOTTKY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

LOW NOISE

SILICON

ZSS1510

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

SCHOTTKY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.33 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZC2810ETC

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.2 pF

SCHOTTKY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.29 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZC2800N

Diodes Incorporated

MIXER DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2 pF

SCHOTTKY

1

IN-LINE

R-PSIP-W2

Not Qualified

.25 W

SILICON

ZC2800M

Diodes Incorporated

MIXER DIODE

SINGLE

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2 pF

SCHOTTKY

1

SMALL OUTLINE

R-PSSO-G2

Not Qualified

.25 W

SILICON

ZC2813E

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

1.2 pF

SCHOTTKY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

LOW NOISE

SILICON

ZC5800ETA

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2 pF

SCHOTTKY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.29 W

SILICON

ZC2811ETA

Diodes Incorporated

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1.2 pF

SCHOTTKY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.29 W

SILICON

ZC5800N

Diodes Incorporated

MIXER DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

2 pF

SCHOTTKY

1

IN-LINE

R-PSIP-W2

Not Qualified

.25 W

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84