ROUND Microwave Mixer & Detector Diodes 450

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Output Current	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	No. of Elements	Minimum Pulsed Input Power	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Schottky Barrier Type	Maximum Operating Temperature	Application	Maximum Pulsed Input Power	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Noise Figure	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	No. of Phases	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material
1S2076ATD	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				3 pF	PLANAR DOPED BARRIER	1		LONG FORM								TIN LEAD	O-LALF-W2			ISOLATED	Not Qualified	.25 W	HIGH RELIABILITY		DO-35	e0			SILICON
1SS199TA	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				3 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified		HIGH RELIABILITY		DO-34				SILICON
1SS286TDX	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-34				SILICON
1SS110TE	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	PLANAR DOPED BARRIER	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-34				SILICON
1SS106RF	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.5 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified		HIGH RELIABILITY		DO-35				SILICON
1SS199TJ	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				3 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified								SILICON
1SS165TAX	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-34				SILICON
1SS165TE	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-34				SILICON
1SS286TE	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-34				SILICON
1SS88TA	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				.97 pF	SCHOTTKY	1		LONG FORM								TIN LEAD	O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-35	e0			SILICON
1SS106RH	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.5 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified		HIGH RELIABILITY		DO-35				SILICON
1SS108TE	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				3 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified		HIGH RELIABILITY		DO-35				SILICON
1SS88RG	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				.97 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-35				SILICON
1SS165TA	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.15 W	HIGH RELIABILITY		DO-34				SILICON
1SS198	Renesas Electronics	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		30 A	1 V	1.5 pF	SCHOTTKY	1		LONG FORM	Rectifier Diodes	10 V		125 Cel					O-LALF-W2	1		ISOLATED	Not Qualified		HIGH RELIABILITY						SILICON
JANTX1N5712	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM				200 Cel			-65 Cel		O-LALF-W2			ISOLATED	Not Qualified	.25 W							SILICON
JANTXV1N5712	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.25 W							SILICON
JAN1N5712	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.25 W							SILICON
5082-2826	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE					SCHOTTKY	1		LONG FORM	Microwave Mixer Diodes			200 Cel	GENERAL PURPOSE		-65 Cel	TIN LEAD	O-LALF-W2			ISOLATED	Not Qualified			1		e0			SILICON
5082-2810#T25	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM								TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
HSCH-6830	Broadcom	MIXER DIODE	RADIAL	FLAT	4	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	RING, 4 ELEMENTS	KU BAND			.22 pF	SCHOTTKY	4	1 W	DISK BUTTON			LOW BARRIER			.6 W		MATTE TIN	O-CRDB-F4				Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-2811#T50	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.02 A	.41 V	1.2 pF	SCHOTTKY	1		LONG FORM	Rectifier Diodes	15 V		200 Cel				TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
5082-2811	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.02 A	.41 V	1.2 pF	SCHOTTKY	1		LONG FORM	Rectifier Diodes	15 V		200 Cel			-65 Cel	TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
HSCH-3206	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE					SCHOTTKY	1	1 W	MICROWAVE			ZERO BARRIER			.2 W		MATTE TIN	O-CEMW-N2				Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
HSCH-6812F01	Broadcom	MIXER DIODE	RADIAL	FLAT	4	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	RING, 4 ELEMENTS	X BAND			.27 pF	SCHOTTKY	4	1 W	DISK BUTTON			MEDIUM BARRIER			.6 W		MATTE TIN	O-CRDB-F4				Not Qualified		FORMED LEADS			e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-2787	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE					SCHOTTKY	1	2 W	LONG FORM									O-LALF-W2			ISOLATED	Not Qualified	.1 W							SILICON
HSCH-6530F01	Broadcom	MIXER DIODE	RADIAL	FLAT	3	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	L BAND TO KU BAND			.22 pF	SCHOTTKY	2	1 W	DISK BUTTON			LOW BARRIER			.3 W		MATTE TIN	O-CRDB-F3		7.2 dB		Not Qualified		FORMED LEADS			e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-2810#T50	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				1.2 pF	SCHOTTKY	1		LONG FORM				200 Cel			-65 Cel	TIN LEAD	O-LALF-W2			ISOLATED	Not Qualified					e0			SILICON
5082-2702	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	KU BAND				SCHOTTKY	1	1 W	MICROWAVE			MEDIUM BARRIER			.2 W			O-CEMW-N2				Not Qualified								SILICON
HSCH-6812	Broadcom	MIXER DIODE	RADIAL	FLAT	4	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	RING, 4 ELEMENTS	X BAND			.27 pF	SCHOTTKY	4	1 W	DISK BUTTON			MEDIUM BARRIER			.6 W		MATTE TIN	O-CRDB-F4				Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
HSCH-6312	Broadcom	MIXER DIODE	RADIAL	FLAT	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	L BAND TO KU BAND			.27 pF	SCHOTTKY	1	1 W	DISK BUTTON			MEDIUM BARRIER			.15 W		MATTE TIN	O-CRDB-F2		6.2 dB		Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
HSCH-6332F01	Broadcom	MIXER DIODE	RADIAL	FLAT	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	L BAND TO KU BAND			.27 pF	SCHOTTKY	1	1 W	DISK BUTTON			LOW BARRIER			.15 W		MATTE TIN	O-CRDB-F2		6.2 dB		Not Qualified		FORMED LEADS			e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-2805	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE					SCHOTTKY	1		LONG FORM	Microwave Mixer Diodes			200 Cel	GENERAL PURPOSE		-65 Cel	TIN LEAD	O-LALF-W2			ISOLATED	Not Qualified			1		e0			SILICON
HSCH-6832F01	Broadcom	MIXER DIODE	RADIAL	FLAT	4	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	RING, 4 ELEMENTS	X BAND			.27 pF	SCHOTTKY	4	1 W	DISK BUTTON			LOW BARRIER			.6 W		MATTE TIN	O-CRDB-F4				Not Qualified		FORMED LEADS			e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-2830	Broadcom	MIXER DIODE	RADIAL	FLAT	4	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	RING, 4 ELEMENTS	C BAND				SCHOTTKY	4		DISK BUTTON			MEDIUM BARRIER						O-CRDB-F4				Not Qualified								SILICON
5082-2800	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.015 A	.41 V	2 pF	SCHOTTKY	1		LONG FORM	Rectifier Diodes	70 V		200 Cel			-65 Cel	TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
5082-2724	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	KU BAND				SCHOTTKY	1	1 W	MICROWAVE			MEDIUM BARRIER			.2 W			O-CEMW-N2				Not Qualified								SILICON
5082-2723	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	KU BAND				SCHOTTKY	1	1 W	MICROWAVE			MEDIUM BARRIER			.2 W			O-CEMW-N2				Not Qualified								SILICON
5082-2750	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE					SCHOTTKY	1	2 W	MICROWAVE									O-CEMW-N2				Not Qualified	.1 W							SILICON
5082-2800#T25	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				2 pF	SCHOTTKY	1		LONG FORM				150 Cel			-60 Cel	TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
HSCH-3207	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE					SCHOTTKY	1	1 W	MICROWAVE			ZERO BARRIER			.2 W		MATTE TIN	O-CEMW-N2				Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
HSCH-6312F01	Broadcom	MIXER DIODE	RADIAL	FLAT	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	L BAND TO KU BAND			.27 pF	SCHOTTKY	1	1 W	DISK BUTTON			MEDIUM BARRIER			.15 W		MATTE TIN	O-CRDB-F2		6.2 dB		Not Qualified		FORMED LEADS			e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-2800#T50	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE				2 pF	SCHOTTKY	1		LONG FORM								TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
5082-2751	Broadcom	MIXER DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE					SCHOTTKY	1	2 W	MICROWAVE									O-CEMW-N2				Not Qualified	.1 W							SILICON
5082-2810	Broadcom	MIXER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.035 A	.41 V	1.2 pF	SCHOTTKY	1		LONG FORM	Rectifier Diodes	20 V		200 Cel				TIN LEAD	O-LALF-W2	1		ISOLATED	Not Qualified					e0			SILICON
HSCH-6530	Broadcom	MIXER DIODE	RADIAL	FLAT	3	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	L BAND TO KU BAND			.22 pF	SCHOTTKY	2	1 W	DISK BUTTON			LOW BARRIER			.3 W		MATTE TIN	O-CRDB-F3		7.2 dB		Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
HSCH-6332	Broadcom	MIXER DIODE	RADIAL	FLAT	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SINGLE	L BAND TO KU BAND			.27 pF	SCHOTTKY	1	1 W	DISK BUTTON			LOW BARRIER			.15 W		MATTE TIN	O-CRDB-F2		6.2 dB		Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON
HSCH-6512	Broadcom	MIXER DIODE	RADIAL	FLAT	3	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	L BAND TO KU BAND			.27 pF	SCHOTTKY	2	1 W	DISK BUTTON			MEDIUM BARRIER			.3 W		MATTE TIN	O-CRDB-F3		6.2 dB		Not Qualified					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84