YES Microwave Mixer & Detector Diodes 1,976

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount (1)
    • YES
    • NO
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

HSD88

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.015 A

.42 V

.8 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

10 V

125 Cel

R-PDSO-F2

Not Qualified

SILICON

HSM198STR

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1.5 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

HSM276STL

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.9 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

HSM88WKTL-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSU277

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Rectifier Diodes

35 V

125 Cel

R-PDSO-G2

Not Qualified

.15 W

SILICON

HSC276

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

125 Cel

R-PDSO-F2

Not Qualified

SILICON

HSM88WATR-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSM198S

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.03 A

1.1 V

1.5 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

10 V

125 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

HSU276TRF-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

TIN BISMUTH

R-PDSO-G2

1

Not Qualified

e6

SILICON

RKS152KJR

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.9 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Varactors

35 V

150 Cel

R-PDSO-F2

Not Qualified

.15 W

SILICON

HSC276TRF

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

e0

SILICON

HSM88AS-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSC285-E

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

SCHOTTKY

1

SMALL OUTLINE

125 Cel

TIN BISMUTH

R-PDSO-F2

1

Not Qualified

e6

SILICON

RKS152KKR

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.9 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Varactors

35 V

150 Cel

R-PDSO-F2

Not Qualified

.15 W

1.7 pF

SILICON

HSU285-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

SCHOTTKY

1

SMALL OUTLINE

125 Cel

TIN BISMUTH

R-PDSO-G2

1

Not Qualified

e6

SILICON

ND433G

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

MEDIUM FREQUENCY

.03 A

.23 V

1.2 pF

SCHOTTKY

25 uA

4

.5 V

SMALL OUTLINE

125 Cel

R-PDSO-G8

.075 W

5 V

SILICON

HSU285

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

.005 A

.15 V

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

2 V

125 Cel

TIN LEAD

R-PDSO-G2

Not Qualified

e0

SILICON

HSM88WATL-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSE11

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

.4 pF

SCHOTTKY

1

SMALL OUTLINE

Microwave Mixer Diodes

125 Cel

S-PDSO-F2

Not Qualified

GALLIUM ARSENIDE

HSB276AS-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.9 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

R-PDSO-G3

1

Not Qualified

SILICON

HSC88

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.015 A

.42 V

.8 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

10 V

125 Cel

R-PDSO-F2

Not Qualified

SILICON

HSM88WK

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

125 Cel

R-PDSO-G3

Not Qualified

SILICON

HSU88TRF-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.8 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

SILICON

HSC276KRF

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

SILICON

HSM88WA

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

Microwave Mixer Diodes

125 Cel

R-PDSO-G3

Not Qualified

SILICON

RKS151KK

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

.8 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Rectifier Diodes

35 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

.15 W

e0

SILICON

HSU276TRU

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

SILICON

RKS1510DKJ

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.8 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

.15 W

SILICON

ND587T-3P

Renesas Electronics

MIXER DIODE

YES

SCHOTTKY

Microwave Mixer Diodes

GALLIUM ARSENIDE

HSM2694

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.005 A

1 V

1.2 pF

PLANAR DOPED BARRIER

2

SMALL OUTLINE

Rectifier Diodes

35 V

125 Cel

R-PDSO-G3

Not Qualified

.15 W

SILICON

HSM276AS

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.03 A

.9 pF

SCHOTTKY

2

SMALL OUTLINE

Rectifier Diodes

5 V

125 Cel

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSU276TRF

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.85 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

TIN LEAD

R-PDSO-G2

Not Qualified

e0

SILICON

HSM276SRTL-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.9 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSU276

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.03 A

.85 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

3 V

125 Cel

TIN LEAD

R-PDSO-G2

Not Qualified

e0

SILICON

HSM88WKTR

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

HSM88ASRTR-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSC277

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Rectifier Diodes

35 V

125 Cel

R-PDSO-F2

Not Qualified

.15 W

SILICON

HSD88KRF-E

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.8 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

SILICON

HSM88WATR

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

.85 pF

SCHOTTKY

2

SMALL OUTLINE

100 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

e0

SILICON

RKS1510DKK

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.8 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

125 Cel

R-PDSO-F2

Not Qualified

.15 W

SILICON

HSC277TRF-E-Q

Renesas Electronics

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 V

1.2 pF

PLANAR DOPED BARRIER

.05 uA

1

25 V

SMALL OUTLINE

60 Cel

-20 Cel

R-PDSO-F2

.15 W

SILICON

HSM198STR-E

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

1.5 pF

SCHOTTKY

2

SMALL OUTLINE

125 Cel

TIN BISMUTH

R-PDSO-G3

1

Not Qualified

e6

SILICON

HSU277TRF-EQ

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

NOT SPECIFIED

NOT SPECIFIED

SILICON

HSU276A

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.03 A

.85 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

5 V

125 Cel

R-PDSO-G2

Not Qualified

SILICON

1SS317

Renesas Electronics

MIXER DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.1 A

1.1 V

1.5 pF

PLANAR DOPED BARRIER

.05 uA

1

30 V

SMALL OUTLINE

R-PDSO-G2

.15 W

HIGH RELIABILITY

SILICON

HMPS-2823-BLK

Broadcom

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

C BAND

1 pF

SCHOTTKY

2

CHIP CARRIER

TIN

R-XBCC-N4

1

Not Qualified

e3

SILICON

HMPS-2820-TR1

Broadcom

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

C BAND

.34 V

1 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

15 V

150 Cel

Tin (Sn)

R-CBCC-N4

1

Not Qualified

e3

20

260

SILICON

HMPS-2825

Broadcom

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SEPARATE, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

.1 uA

2

1 V

CHIP CARRIER

Other Diodes

15 V

150 Cel

-65 Cel

Tin (Sn)

R-CBCC-N4

1

Not Qualified

e3

20

260

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84