FLAT Microwave Mixer & Detector Diodes 262

  1. Home
  2. Microwave Mixer & Detector Diodes
Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form (1)
    • FLAT
    • BALL
    • C BEND
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

DAN222M3T5G

Onsemi

MIXER DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

.1 A

1.2 V

3.5 pF

.004 us

2

SMALL OUTLINE

Rectifier Diodes

80 V

150 Cel

MATTE TIN

R-PDSO-F3

1

Not Qualified

.26 W

e3

30

260

SILICON

NSR15ADXV6T5G

Onsemi

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

MEDIUM FREQUENCY

.03 A

.68 V

SCHOTTKY

.05 uA

2

1 V

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F6

1

15 V

e3

30

260

SILICON

STDD15-07P6

STMicroelectronics

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

1 pF

2

SMALL OUTLINE

Varactors

15 V

MATTE TIN

R-PDSO-F6

1

Not Qualified

e3

SILICON

934056830115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

BA277

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

1 V

1.2 pF

1

SMALL OUTLINE

Rectifier Diodes

35 V

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

934055282115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.05 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

1

Not Qualified

.715 W

e3

30

260

SILICON

BA277T/R

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

1 V

1.2 pF

1

SMALL OUTLINE

Rectifier Diodes

35 V

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

934056928115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 pF

SCHOTTKY

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SILICON

934054935335

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

BA278,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

1

SMALL OUTLINE

150 Cel

-65 Cel

R-PDSO-F2

.715 W

SILICON

BA277-01

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

1

SMALL OUTLINE

R-PDSO-F2

Not Qualified

.315 W

SILICON

BA277,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

1 V

1.2 pF

1

SMALL OUTLINE

Rectifier Diodes

35 V

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

934054935115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

BA278

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

934054935135

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.2 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

150 Cel

-65 Cel

TIN

R-PDSO-F2

Not Qualified

.715 W

e3

SILICON

1PS66SB17,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.35 V

1 pF

SCHOTTKY

.25 uA

3

3 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

TIN

R-PDSO-F6

1

Not Qualified

e3

30

260

SILICON

1PS66SB63

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.5 pF

SCHOTTKY

3

SMALL OUTLINE

R-PDSO-F6

Not Qualified

SILICON

1PS66SB17

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.35 V

1 pF

SCHOTTKY

.25 uA

3

3 V

SMALL OUTLINE

Other Diodes

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-F6

1

Not Qualified

e3

30

260

SILICON

1PS66SB82

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.34 V

SCHOTTKY

.2 uA

3

1 V

SMALL OUTLINE

Other Diodes

125 Cel

-65 Cel

Tin (Sn)

R-PDSO-F6

1

Not Qualified

e3

30

260

SILICON

1PS66SB63,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

.5 pF

SCHOTTKY

3

SMALL OUTLINE

125 Cel

R-PDSO-F6

Not Qualified

SILICON

1PS79SB63T/R

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 pF

SCHOTTKY

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

e3

SILICON

BA892

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

150 Cel

-65 Cel

R-PDSO-F2

Not Qualified

.715 W

SILICON

1PS79SB63

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 pF

SCHOTTKY

1

SMALL OUTLINE

TIN

R-PDSO-F2

Not Qualified

e3

SILICON

BA891T/R

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

1 V

1.05 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Rectifier Diodes

35 V

150 Cel

-65 Cel

TIN

R-PDSO-F2

1

Not Qualified

.715 W

e3

30

260

SILICON

BA891

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.1 A

1 V

1.05 pF

PLANAR DOPED BARRIER

1

SMALL OUTLINE

Rectifier Diodes

35 V

150 Cel

-65 Cel

TIN

R-PDSO-F2

1

Not Qualified

.715 W

e3

30

260

SILICON

IEC-60134

1PS79SB17

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.35 V

1 pF

SCHOTTKY

1

SMALL OUTLINE

Rectifier Diodes

4 V

150 Cel

Tin (Sn)

R-PDSO-F2

1

Not Qualified

e3

30

260

SILICON

1PS79SB63,115

NXP Semiconductors

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.5 pF

SCHOTTKY

1

SMALL OUTLINE

125 Cel

TIN

R-PDSO-F2

NOT APPLICABLE

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

Q62702-A1028

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.6 pF

SCHOTTKY

1

SMALL OUTLINE

LOW BARRIER

150 Cel

R-PDSO-F2

SILICON

BAT15-025D

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

400 ohm

S BAND

100 A

.42 pF

SCHOTTKY

2

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

4 GHz

BA892H6433XTMA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

e3

SILICON

AEC-Q101

BA892H6327

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

L BAND

1 V

1.4 pF

1

SMALL OUTLINE

Rectifier Diodes

35 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

e3

260

SILICON

AEC-Q101

BAT15-020R

Infineon Technologies

MIXER DIODE

QUAD

FLAT

4

YES

SQUARE

GLASS

RING, 4 ELEMENTS

400 ohm

S BAND

100 A

.35 pF

SCHOTTKY

4

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

S-LQMW-F4

Not Qualified

250 ohm

53 dBm

4 V

0 GHz

SILICON

4 GHz

BAT15-115R

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

RING, 4 ELEMENTS

400 ohm

KA BAND

50 A

.19 pF

SCHOTTKY

4

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

40 GHz

BAT15-090S

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

GLASS

SINGLE

400 ohm

X BAND TO KU BAND

50 A

.15 pF

SCHOTTKY

1

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

R-LDMW-F2

Not Qualified

250 ohm

53 dBm

4 V

0 GHz

SILICON

12 GHz

BAT15-115S

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

400 ohm

KA BAND

50 A

.18 pF

SCHOTTKY

1

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F2

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

40 GHz

BAT15-020D

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

3

YES

UNSPECIFIED

GLASS

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

400 ohm

S BAND

100 A

.35 pF

SCHOTTKY

2

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

X-LXMW-F3

Not Qualified

250 ohm

53 dBm

4 V

0 GHz

SILICON

4 GHz

BAT15-050D

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

3

YES

UNSPECIFIED

GLASS

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

400 ohm

C BAND

100 A

.25 pF

SCHOTTKY

2

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

X-LXMW-F3

Not Qualified

250 ohm

53 dBm

4 V

0 GHz

SILICON

8 GHz

BA892H6327XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

e3

SILICON

AEC-Q101

BA892-02V

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

R-PDSO-F2

1

Not Qualified

.92 pF

SILICON

AEC-Q101

BAT15-025S

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

400 ohm

S BAND

100 A

.41 pF

SCHOTTKY

1

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F2

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

4 GHz

BAT15-095D

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

400 ohm

X BAND TO KU BAND

50 A

.22 pF

SCHOTTKY

2

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

12 GHz

BAT15-052R

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

RING, 4 ELEMENTS

400 ohm

C BAND

100 A

.28 pF

SCHOTTKY

4

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

8 GHz

BAT15-095S

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

400 ohm

X BAND TO KU BAND

50 A

.21 pF

SCHOTTKY

1

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F2

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

12 GHz

BAT15-115D

Infineon Technologies

MIXER DIODE

UNSPECIFIED

FLAT

4

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

400 ohm

KA BAND

50 A

.19 pF

SCHOTTKY

2

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

Tin/Lead (Sn/Pb)

S-CXMW-F4

Not Qualified

250 ohm

53 dBm

4 V

e0

0 GHz

SILICON

40 GHz

BAT62-07F

Infineon Technologies

MIXER DIODE

DUAL

FLAT

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

1 V

.6 pF

SCHOTTKY

10 uA

2

40 V

SMALL OUTLINE

Other Diodes

40 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F4

Not Qualified

.1 W

e3

SILICON

BAT15-050R

Infineon Technologies

MIXER DIODE

QUAD

FLAT

4

YES

SQUARE

GLASS

RING, 4 ELEMENTS

400 ohm

C BAND

100 A

.25 pF

SCHOTTKY

4

MICROWAVE

Other Diodes

LOW BARRIER

150 Cel

S-LQMW-F4

Not Qualified

250 ohm

53 dBm

4 V

0 GHz

SILICON

8 GHz

BA892H6770XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

e3

SILICON

AEC-Q101

BA89202VH6327XTSA1

Infineon Technologies

MIXER DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

e3

SILICON

AEC-Q101
Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84