AXIAL Microwave Mixer & Detector Diodes 250

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

BA484

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1.2 V

1.6 pF

.1 uA

1

LONG FORM

Rectifier Diodes

35 V

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

35 V

SILICON

BA481153

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

.6 V

1.1 pF

10 uA

1

LONG FORM

100 Cel

O-LALF-W2

8 dB

ISOLATED

Not Qualified

DO-34

4 V

SILICON

BA481133

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

.6 V

1.1 pF

10 uA

1

LONG FORM

100 Cel

O-LALF-W2

8 dB

ISOLATED

Not Qualified

DO-34

4 V

SILICON

BA484136

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1.2 V

1.6 pF

.1 uA

1

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

35 V

SILICON

BA423A

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.9 V

2.5 pF

SCHOTTKY

1

LONG FORM

Rectifier Diodes

20 V

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

SILICON

BA482116

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1.2 V

1.2 pF

.1 uA

1

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

35 V

SILICON

BA481136

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

30 A

.6 V

1.1 pF

10 uA

1

LONG FORM

100 Cel

O-LALF-W2

8 dB

ISOLATED

Not Qualified

DO-34

4 V

SILICON

BA482T/R

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1.2 V

1.2 pF

.1 uA

1

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

35 V

SILICON

BA223

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.5 pF

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

DO-34

SILICON

BA423A113

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

50 A

.9 V

2.5 pF

.1 uA

1

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

20 V

SILICON

BA281

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

1.2 pF

1

LONG FORM

O-PALF-W2

ISOLATED

Not Qualified

DO-35

SILICON

BA423A143

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

50 A

.9 V

2.5 pF

.1 uA

1

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

20 V

SILICON

BA483116

NXP Semiconductors

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

VERY HIGH FREQUENCY

100 A

1.2 V

1 pF

.1 uA

1

LONG FORM

150 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-34

35 V

SILICON

1S2076ARF

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

175 Cel

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

SILICON

1S2076-E

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

175 Cel

TIN COPPER

O-LALF-W2

1

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

e2

SILICON

1SS108TDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

SILICON

1SS286TA

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.2 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-34

SILICON

1SS199RX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-34

SILICON

1SS86

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.85 pF

SCHOTTKY

1

LONG FORM

Microwave Mixer Diodes

100 Cel

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1SS110TD

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.2 pF

PLANAR DOPED BARRIER

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-34

SILICON

1SS106TDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

SILICON

1SS198TDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-34

SILICON

1SS88TDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.97 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1S2076ARG

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

175 Cel

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

SILICON

1SS110RY

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.2 pF

PLANAR DOPED BARRIER

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-34

SILICON

1SS108RE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

SILICON

1S2076RF

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

175 Cel

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

SILICON

1SS88TE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.97 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1SS198TE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

TIN COPPER

O-LALF-W2

1

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-34

e2

SILICON

1SS199TE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-34

SILICON

1SS199TDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-34

SILICON

1S2076RE-E

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

175 Cel

TIN COPPER

O-LALF-W2

1

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

e2

SILICON

1S2076ATDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

SILICON

1SS106RE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

SILICON

1S2076TAX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

SILICON

1SS108RH

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

SILICON

1SS106TD

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

e0

SILICON

1SS106-E

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

TIN COPPER

O-LALF-W2

1

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

e2

SILICON

1SS86TA

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.85 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1S2076TDX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

SILICON

1S2076ARE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

PLANAR DOPED BARRIER

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

e0

SILICON

1S2076A

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

CERAMIC, GLASS-SEALED

SINGLE

.15 A

.8 V

3 pF

.003 us

PLANAR DOPED BARRIER

1

LONG FORM

Rectifier Diodes

70 V

175 Cel

TIN LEAD

O-GALF-W2

ISOLATED

Not Qualified

.25 W

HIGH RELIABILITY

DO-35

e0

SILICON

1SS86TAX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.85 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1SS108RF

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

SILICON

1SS86TE

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.85 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1SS86RF

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

ULTRA HIGH FREQUENCY

.85 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-35

SILICON

1SS106TA-E

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 pF

SCHOTTKY

1

LONG FORM

TIN COPPER

O-LALF-W2

1

ISOLATED

Not Qualified

HIGH RELIABILITY

DO-35

e2

SILICON

1SS286RX

Renesas Electronics

MIXER DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.2 pF

SCHOTTKY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.15 W

HIGH RELIABILITY

DO-34

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84