BOTTOM Microwave Mixer & Detector Diodes 67

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Manufacturers
    • Agilent Technologies
    • Broadcom
    • Cobham Plc
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • NXP Semiconductors
    • Nexperia
    • Onsemi
    • Panasonic
    • ROHM
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • MIXER DIODE
    • RECTIFIER DIODE
    • VARIABLE CAPACITANCE DIODE
Terminal Position (1)
    • BOTTOM
    • AXIAL
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • TRIPLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • BALL
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 10
    • 2
    • 3
    • 4
    • 5
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • 2 BANKS, SERIES CONNECTED, CENTRE TAP, 2 ELEMENTS
    • ANTI-PARALLEL CONNECTED, 2 ELEMENTS
    • BRIDGE, 4 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON ANODE, 4 ELEMENTS
    • COMMON BIPOLAR TERMINAL, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 4 ELEMENTS
    • COMPLEX
    • CROSSOVER RING, 4 ELEMENTS
    • RING, 4 ELEMENTS
    • RING, 8 ELEMENTS
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Maximum Impedance
    • 1200 ohm
    • 150 ohm
    • 15000 ohm
    • 200 ohm
    • 250 ohm
    • 350 ohm
    • 400 ohm
    • 5.5 ohm
    • 5000 ohm
    • 6000 ohm
    • 7500 ohm
Frequency Band
    • C BAND
    • C BAND TO KU BAND
    • C BAND TO X BAND
    • HIGH FREQUENCY
    • K BAND
    • K BAND TO MILLIMETER WAVE BAND
    • KA BAND
    • KU BAND
    • L BAND
    • L BAND TO K BAND
    • L BAND TO KU BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • S BAND TO C BAND
    • S BAND TO KA BAND
    • S BAND TO X BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO C BAND
    • ULTRA HIGH FREQUENCY TO S BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO MILLIMETER WAVE BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • W BAND
    • X BAND
    • X BAND TO KU BAND
Maximum Output Current
    • .001 A
    • .005 A
    • .01 A
    • .015 A
    • .02 A
    • .025 A
    • .03 A
    • .035 A
    • .04 A
    • .05 A
    • .07 A
    • .09 A
    • .1 A
    • .11 A
    • .13 A
    • .15 A
    • .2 A
    • .5 A
    • 1 A
    • 10 A
    • 100 A
    • 15 A
    • 30 A
    • 50 A
Maximum Forward Voltage (VF)
    • .01 V
    • .12 V
    • .15 V
    • .23 V
    • .24 V
    • .25 V
    • .27 V
    • .3 V
    • .32 V
    • .34 V
    • .35 V
    • .375 V
    • .4 V
    • .41 V
    • .415 V
    • .42 V
    • .44 V
    • .45 V
    • .5 V
    • .52 V
    • .55 V
    • .575 V
    • .58 V
    • .6 V
    • .68 V
    • .7 V
    • .8 V
    • .85 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.2 V
    • 800 V
Maximum Diode Capacitance
    • .05 pF
    • .06 pF
    • .07 pF
    • .08 pF
    • .1 pF
    • .12 pF
    • .15 pF
    • .16 pF
    • .18 pF
    • .19 pF
    • .2 pF
    • .21 pF
    • .22 pF
    • .23 pF
    • .24 pF
    • .25 pF
    • .26 pF
    • .27 pF
    • .28 pF
    • .3 pF
    • .31 pF
    • .32 pF
    • .35 pF
    • .38 pF
    • .4 pF
    • .41 pF
    • .42 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .85 pF
    • .9 pF
    • .97 pF
    • 1 pF
    • 1.03 pF
    • 1.05 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.4 pF
    • 1.5 pF
    • 1.6 pF
    • 1.72 pF
    • 1.83 pF
    • 1.9 pF
    • 10.77 pF
    • 15 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 3 pF
    • 3.5 pF
    • 4 pF
Maximum Reverse Recovery Time
    • .003 us
    • .0035 us
    • .004 us
Technology
    • PLANAR DOPED BARRIER
    • SCHOTTKY
Maximum Reverse Current
    • .001 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .25 uA
    • .5 uA
    • .75 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 200 uA
    • 25 uA
    • 5 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Reverse Test Voltage
    • .5 V
    • 0 V
    • 1 V
    • 1.5 V
    • 15 V
    • 2 V
    • 20 V
    • 25 V
    • 3 V
    • 30 V
    • 4 V
    • 40 V
    • 50 V
    • 70 V
Minimum Pulsed Input Power
    • 1 W
    • 2 W
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • GRID ARRAY
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Bridge Rectifier Diodes
    • Microwave Mixer Diodes
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 1 V
    • 10 V
    • 100 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 50 V
    • 60 V
    • 7 V
    • 70 V
    • 8 V
    • 80 V
Schottky Barrier Type
    • HIGH BARRIER
    • LOW BARRIER
    • MEDIUM BARRIER
    • ZERO BARRIER
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 60 Cel
    • 70 Cel
    • 85 Cel
Application
    • EFFICIENCY
    • GENERAL PURPOSE
Maximum Pulsed Input Power
    • .075 W
    • .1 W
    • .125 W
    • .15 W
    • .2 W
    • .25 W
    • .3 W
    • .6 W
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -55 Cel
    • -60 Cel
    • -65 Cel
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL PALLADIUM GOLD
    • PURE TIN
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Lead (Sn/Pb)
JESD-30 Code
    • O-CELF-R2
    • O-CEMW-N2
    • O-CRDB-F2
    • O-CRDB-F3
    • O-CRDB-F4
    • O-CXMW-G2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-LXMW-G2
    • O-PALF-W2
    • O-PBCY-T2
    • O-PBCY-W2
    • O-PELF-N2
    • O-PRDB-F2
    • O-PRDB-F4
    • R-CBCC-N4
    • R-CDMW-F2
    • R-CDSO-C2
    • R-CDSO-G3
    • R-CTMW-F3
    • R-LDMW-F2
    • R-LTMW-F3
    • R-MTMW-F3
    • R-PBCC-N2
    • R-PBCC-N4
    • R-PBGA-B4
    • R-PBGA-B6
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PSIP-W2
    • R-PSSO-G2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDMW-F2
    • R-XDSO-N2
    • R-XQMW-F4
    • R-XUUC-N1
    • R-XUUC-N2
    • R-XUUC-N3
    • R-XUUC-N6
    • S-CDMW-F2
    • S-CQMW-F4
    • S-CXMW-F2
    • S-CXMW-F4
    • S-LQMW-F4
    • S-PDMW-F2
    • S-PDSO-F2
    • S-PXMW-F2
    • S-PXMW-F4
    • S-XUUC-N1
    • S-XUUC-N3
    • S-XUUC-N4
    • X-LXMW-F3
Moisture Sensitivity Level (MSL)
    • 1
    • 2
    • NOT APPLICABLE
Maximum Noise Figure
    • 5 dB
    • 5.5 dB
    • 6 dB
    • 6.2 dB
    • 6.5 dB
    • 7 dB
    • 7.2 dB
    • 7.5 dB
    • 8 dB
    • 9 dB
Case Connection
    • ANODE
    • ANODE AND CATHODE
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .02 W
    • .05 W
    • .075 W
    • .1 W
    • .12 W
    • .125 W
    • .15 W
    • .2 W
    • .21 W
    • .225 W
    • .25 W
    • .26 W
    • .28 W
    • .29 W
    • .3 W
    • .315 W
    • .33 W
    • .43 W
    • .5 W
    • .715 W
    • .75 W
Nominal Diode Capacitance
    • .8 pF
    • .92 pF
    • 1.7 pF
Additional Features
    • FORMED LEADS
    • HIGH RELIABILITY
    • HIGH SPEED
    • LOW NOISE
    • LOW REVERSE LEAKAGE
    • MATCHED BATCH AVAILABLE
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2202
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2207
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2765
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2774
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2785
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF 5082-2794
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5310
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5312
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5320
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5334
    • MATCHED BATCH WITH MINIMUM OF 20 UNITS OF HSCH-5338
    • STANDARD BATCH MATCH SIZE 100 UNITS
    • TR, 7 INCH : 3000
No. of Phases
    • 1
Minimum Impedance
    • 100 ohm
    • 150 ohm
    • 1800 ohm
    • 200 ohm
    • 2000 ohm
    • 250 ohm
    • 50 ohm
    • 5000 ohm
    • 800 ohm
Minimum Tangential Signal Sensitivity
    • -40 dBm
    • -50 dBm
    • -56 dBm
    • 52 dBm
    • 53 dBm
    • 55 dBm
    • 57 dBm
    • 59 dBm
JEDEC-95 Code
    • DO-34
    • DO-35
    • TO-226AC
    • TO-236
    • TO-236AA
    • TO-236AB
    • TO-253AA
    • TO-92
Minimum Breakdown Voltage
    • 10 V
    • 15 V
    • 2 V
    • 20 V
    • 3 V
    • 30 V
    • 35 V
    • 4 V
    • 40 V
    • 5 V
    • 6 V
    • 60 V
    • 70 V
    • 8 V
Maximum Non Repetitive Peak Forward Current
    • .05 A
    • .06 A
    • .08 A
    • .1 A
    • 1 A
    • 3 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e4
    • e6
Minimum Operating Frequency
    • .0001 GHz
    • .3 GHz
    • .915 GHz
    • 0 GHz
    • 10 GHz
    • 11 GHz
    • 12 GHz
    • 12.4 GHz
    • 2 GHz
    • 20 GHz
    • 25 GHz
    • 27 GHz
    • 3.9 GHz
    • 4 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Maximum Operating Frequency
    • 1 GHz
    • 10 GHz
    • 100 GHz
    • 11 GHz
    • 12 GHz
    • 14 GHz
    • 150 GHz
    • 18 GHz
    • 4 GHz
    • 40 GHz
    • 5.8 GHz
    • 6 GHz
    • 6000 GHz
    • 8 GHz
    • 80 GHz
    • 85 GHz
Reference Standard
    • AEC-Q101
    • EUROPEAN SPACE AGENCY
    • IEC-60134
    • MIL-19500
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Impedance Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Diode Capacitance Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Minimum Pulsed Input Power Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Schottky Barrier Type Maximum Operating Temperature Application Maximum Pulsed Input Power Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features No. of Phases Minimum Impedance Minimum Tangential Signal Sensitivity JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency Reference Standard

SMS7621-092

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

COMMON BIPOLAR TERMINAL, 2 ELEMENTS

K BAND

.05 A

.32 V

SCHOTTKY

2

CHIP CARRIER

LOW BARRIER

150 Cel

-65 Cel

R-XBCC-N4

.075 W

2 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

MBD301

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

TO-92

e0

235

SILICON

SMS3923-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND TO C BAND

.05 A

1 V

1.3 pF

SCHOTTKY

.5 uA

1

15 V

CHIP CARRIER

150 Cel

-65 Cel

R-PBCC-N2

1

Not Qualified

.075 W

20 V

260

SILICON

6000 GHz

MBD301G

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

-55 Cel

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

TO-226AC

e1

260

SILICON

SMS7630-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.05 A

.12 V

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

1 V

ZERO BARRIER

175 Cel

R-PBCC-N2

1

Not Qualified

.25 W

30

260

SILICON

BAT1502LRHE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.35 pF

SCHOTTKY

1

CHIP CARRIER

LOW BARRIER

150 Cel

GOLD

R-XBCC-N2

1

.1 W

LOW NOISE

e4

SILICON

BAT1502ELE6327XTMA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.24 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

BAT1502ELSE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-XBCC-N2

1

.1 W

4 V

e4

SILICON

BAT2402LSE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

SMS7630-061

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

SCHOTTKY

1

CHIP CARRIER

ZERO BARRIER

R-PBCC-N2

1

Not Qualified

.075 W

40

260

SILICON

SMS7630-517

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

X BAND

.24 V

.3 pF

SCHOTTKY

2

CHIP CARRIER

Other Diodes

1 V

ZERO BARRIER

150 Cel

-65 Cel

R-PBCC-N4

1

Not Qualified

.075 W

LOW NOISE

30

260

SILICON

SMS7621-060

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

K BAND

.18 pF

SCHOTTKY

1

CHIP CARRIER

LOW BARRIER

R-XBCC-N2

1

Not Qualified

.075 W

30

260

SILICON

SMS3922-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND TO C BAND

.05 A

.45 V

1.03 pF

SCHOTTKY

.1 uA

1

1 V

CHIP CARRIER

150 Cel

-65 Cel

R-PBCC-N2

1

Not Qualified

.075 W

70 V

260

SILICON

6000 GHz

SMS7621-040LF

Skyworks Solutions

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.05 A

.32 V

.25 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

2 V

LOW BARRIER

175 Cel

R-PBCC-N2

1

Not Qualified

.75 W

260

SILICON

HMPS-2822-BLK

Broadcom

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

C BAND

.34 V

1 pF

SCHOTTKY

.1 uA

2

1 V

CHIP CARRIER

Other Diodes

150 Cel

-65 Cel

Tin (Sn)

R-XBCC-N4

1

Not Qualified

e3

20

260

SILICON

MBD201

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1.5 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-T2

TO-226AC

SILICON

NSR201MXT5G

Onsemi

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND TO KU BAND

.05 A

.32 V

.2 pF

SCHOTTKY

10 uA

1

2 V

CHIP CARRIER

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

e4

30

260

SILICON

MBD501

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-T2

TO-226AC

SILICON

MBD701

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

TO-92

e0

235

SILICON

MBD101

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Microwave Mixer Diodes

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

TO-92

e0

235

SILICON

MBD701G

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Other Diodes

125 Cel

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

TO-92

e1

260

SILICON

ESGD100

Onsemi

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

.32 pF

SCHOTTKY

1

CHIP CARRIER

Microwave Mixer Diodes

150 Cel

R-XBCC-N2

Not Qualified

SILICON

SNSR201MXT5G

Onsemi

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND TO KU BAND

.05 A

.32 V

.2 pF

SCHOTTKY

.75 uA

1

1.5 V

CHIP CARRIER

2 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

1

e4

30

260

SILICON

MBD101G

Onsemi

MIXER DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1 pF

SCHOTTKY

1

CYLINDRICAL

Microwave Mixer Diodes

150 Cel

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

TO-92

e1

260

SILICON

BAT2402ELSE6327XTSA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

BAT24-02ELS

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

K BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

Gold (Au)

R-PBCC-N2

1

.1 W

4 V

e4

NOT SPECIFIED

NOT SPECIFIED

SILICON

SP001200976

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.35 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

R-PBCC-N2

.1 W

4 V

SILICON

BAT15-02ELS

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-XBCC-N2

1

.1 W

4 V

e4

SILICON

BAT15-02L

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.11 A

.41 V

.35 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

4 V

LOW BARRIER

150 Cel

MATTE TIN

R-XBCC-N2

Not Qualified

.1 W

LOW NOISE

e3

SILICON

BAT15-02LRH-E6327

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.11 A

.41 V

.35 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

LOW BARRIER

150 Cel

-55 Cel

R-XBCC-N2

1

.1 W

4 V

260

SILICON

BAT15-02LRH

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

.32 V

.35 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

4 V

LOW BARRIER

150 Cel

GOLD

R-XBCC-N2

1

Not Qualified

.1 W

LOW NOISE

e4

SILICON

BAT15-02EL

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.35 pF

SCHOTTKY

1

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

.1 W

LOW NOISE

e4

SILICON

BAT14-077D

Infineon Technologies

MIXER DIODE

BOTTOM

BALL

6

YES

RECTANGULAR

PLASTIC/EPOXY

W BAND

SCHOTTKY

2

GRID ARRAY

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

R-PBGA-B6

Not Qualified

.02 W

SILICON

8 GHz

BAT62-02L

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

.04 A

1 V

.6 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

40 V

LOW BARRIER

150 Cel

MATTE TIN

R-XBCC-N2

Not Qualified

.1 W

e3

SILICON

BA892-02L

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

VERY HIGH FREQUENCY

1.4 pF

1

CHIP CARRIER

Varactors

35 V

125 Cel

-55 Cel

TIN LEAD

R-XBCC-N2

Not Qualified

.92 pF

e0

SILICON

AEC-Q101

BAT15-07LRH

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

X BAND

.32 V

.35 pF

SCHOTTKY

2

CHIP CARRIER

Other Diodes

4 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-XBCC-N4

Not Qualified

.1 W

LOW NOISE

e3

SILICON

BAT15-02LS

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

Rectifier Diodes

4 V

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

BAT15-099LRH

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

X BAND

.32 V

.35 pF

SCHOTTKY

2

CHIP CARRIER

Other Diodes

4 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-XBCC-N4

Not Qualified

.1 W

LOW NOISE

e3

SILICON

BAT68-02L

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.34 V

1 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

8 V

150 Cel

MATTE TIN

R-XBCC-N2

Not Qualified

.15 W

e3

SILICON

BAT15-098LRH

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

X BAND

.32 V

.35 pF

SCHOTTKY

2

CHIP CARRIER

Other Diodes

4 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-XBCC-N4

Not Qualified

.1 W

LOW NOISE

e3

SILICON

BAT62-07L4

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

1 V

.6 pF

SCHOTTKY

10 uA

2

40 V

CHIP CARRIER

Other Diodes

40 V

LOW BARRIER

150 Cel

-55 Cel

MATTE TIN

R-XBCC-N4

Not Qualified

.1 W

e3

SILICON

BAT14-077S

Infineon Technologies

MIXER DIODE

BOTTOM

BALL

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

W BAND

SCHOTTKY

1

GRID ARRAY

Microwave Mixer Diodes

MEDIUM BARRIER

150 Cel

R-PBGA-B4

Not Qualified

.02 W

SILICON

80 GHz

BAT62-02LS

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1 V

.6 pF

SCHOTTKY

1

CHIP CARRIER

Rectifier Diodes

40 V

LOW BARRIER

150 Cel

MATTE TIN

R-XBCC-N2

Not Qualified

.1 W

e3

SILICON

BAT1502ELSE6433XTMA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

R-PBCC-N2

.1 W

4 V

SILICON

BAT1502LSE6433XTMA1

Infineon Technologies

MIXER DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

X BAND

.11 A

.41 V

.23 pF

SCHOTTKY

5 uA

1

1 V

CHIP CARRIER

LOW BARRIER

150 Cel

-55 Cel

GOLD

R-PBCC-N2

1

.1 W

4 V

e4

SILICON

ZC2800

Diodes Incorporated

MIXER DIODE

BOTTOM

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

2 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.25 W

SILICON

ZC5800

Diodes Incorporated

MIXER DIODE

BOTTOM

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

2 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.25 W

SILICON

ZC2811

Diodes Incorporated

MIXER DIODE

BOTTOM

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

1.2 pF

SCHOTTKY

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.25 W

SILICON

Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84