RADIAL Microwave Mixer & Detector Diodes 28
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Config | Maximum Impedance | Frequency Band | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Minimum Pulsed Input Power | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Schottky Barrier Type | Maximum Operating Temperature | Application | Maximum Pulsed Input Power | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Noise Figure | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | Minimum Impedance | Minimum Tangential Signal Sensitivity | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Minimum Operating Frequency | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Operating Frequency | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Skyworks Solutions |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
KU BAND |
.15 pF |
SCHOTTKY |
1 |
DISK BUTTON |
Microwave Mixer Diodes |
LOW BARRIER |
175 Cel |
O-PRDB-F2 |
1 |
Not Qualified |
12.4 GHz |
260 |
SILICON |
18 GHz |
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|
|
Skyworks Solutions |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
PLASTIC/EPOXY |
RING, 8 ELEMENTS |
S BAND TO X BAND |
SCHOTTKY |
8 |
DISK BUTTON |
HIGH BARRIER |
O-PRDB-F4 |
1 |
Not Qualified |
40 |
260 |
SILICON |
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|
Renesas Electronics |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
CROSSOVER RING, 4 ELEMENTS |
ULTRA HIGH FREQUENCY |
1 V |
1.2 pF |
SCHOTTKY |
4 |
0 V |
DISK BUTTON |
150 Cel |
O-CRDB-F4 |
.075 W |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
KU BAND |
.22 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
LOW BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
X BAND |
.27 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
LOW BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
7.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
X BAND |
.27 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
6.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
LOW BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
6.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
X BAND |
.27 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
LOW BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
C BAND |
SCHOTTKY |
4 |
DISK BUTTON |
MEDIUM BARRIER |
O-CRDB-F4 |
Not Qualified |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
6.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
LOW BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
7.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
LOW BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
6.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
6.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
LOW BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
7.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
LOW BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
6.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
LOW BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
6.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
KU BAND |
.22 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
LOW BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
7.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
KU BAND |
.22 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
X BAND |
.27 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
LOW BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
7.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
LOW BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
7.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
7.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
L BAND TO KU BAND |
.22 pF |
SCHOTTKY |
1 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.15 W |
MATTE TIN |
O-CRDB-F2 |
7.2 dB |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
4 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
RING, 4 ELEMENTS |
KU BAND |
.22 pF |
SCHOTTKY |
4 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.6 W |
MATTE TIN |
O-CRDB-F4 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
Broadcom |
MIXER DIODE |
RADIAL |
FLAT |
3 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
L BAND TO KU BAND |
.27 pF |
SCHOTTKY |
2 |
1 W |
DISK BUTTON |
MEDIUM BARRIER |
.3 W |
MATTE TIN |
O-CRDB-F3 |
6.2 dB |
Not Qualified |
FORMED LEADS |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.
A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.
A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.
Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.
Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84