Infineon Technologies Microwave Mixer & Detector Diodes 418
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Config | Maximum Impedance | Frequency Band | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Minimum Pulsed Input Power | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Schottky Barrier Type | Maximum Operating Temperature | Application | Maximum Pulsed Input Power | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Noise Figure | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | Minimum Impedance | Minimum Tangential Signal Sensitivity | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Minimum Operating Frequency | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Operating Frequency | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.34 V |
1 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
8 V |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
Not Qualified |
.15 W |
e3 |
260 |
SILICON |
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|
Infineon Technologies |
MIXER DIODE |
YES |
Microwave Mixer Diodes |
150 Cel |
5.5 dB |
SILICON |
|||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
GULL WING |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.6 pF |
SCHOTTKY |
1 |
MICROWAVE |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-CXMW-G2 |
6.5 dB |
Not Qualified |
.1 W |
HIGH RELIABILITY |
SILICON |
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|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
FLAT |
2 |
YES |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
400 ohm |
KA BAND |
50 A |
.18 pF |
SCHOTTKY |
1 |
MICROWAVE |
Other Diodes |
LOW BARRIER |
150 Cel |
Tin/Lead (Sn/Pb) |
S-CXMW-F2 |
Not Qualified |
250 ohm |
53 dBm |
4 V |
e0 |
0 GHz |
SILICON |
40 GHz |
|||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
YES |
.44 V |
Other Diodes |
150 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
.3 V |
.85 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
Other Diodes |
8 V |
LOW BARRIER |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
Not Qualified |
.1 W |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
FLAT |
3 |
YES |
UNSPECIFIED |
GLASS |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
400 ohm |
S BAND |
100 A |
.35 pF |
SCHOTTKY |
2 |
MICROWAVE |
Other Diodes |
LOW BARRIER |
150 Cel |
X-LXMW-F3 |
Not Qualified |
250 ohm |
53 dBm |
4 V |
0 GHz |
SILICON |
4 GHz |
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|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
FLAT |
3 |
YES |
UNSPECIFIED |
GLASS |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
400 ohm |
C BAND |
100 A |
.25 pF |
SCHOTTKY |
2 |
MICROWAVE |
Other Diodes |
LOW BARRIER |
150 Cel |
X-LXMW-F3 |
Not Qualified |
250 ohm |
53 dBm |
4 V |
0 GHz |
SILICON |
8 GHz |
|||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
.85 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
LOW BARRIER |
150 Cel |
R-PDSO-G4 |
CATHODE |
.1 W |
HIGH SPEED |
SILICON |
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|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.75 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
Not Qualified |
.15 W |
e3 |
SILICON |
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|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1.4 pF |
1 |
SMALL OUTLINE |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
e3 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
X BAND |
.11 A |
.41 V |
.35 pF |
SCHOTTKY |
1 |
SMALL OUTLINE |
LOW BARRIER |
150 Cel |
-55 Cel |
R-PDSO-G2 |
.1 W |
LOW NOISE |
4 V |
SILICON |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.75 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
125 Cel |
-55 Cel |
R-PDSO-G3 |
.15 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
X BAND |
.52 V |
.35 pF |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
4 V |
MEDIUM BARRIER |
125 Cel |
R-PDSO-G2 |
Not Qualified |
.1 W |
SILICON |
||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.34 V |
1 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
Rectifier Diodes |
8 V |
150 Cel |
MATTE TIN |
R-PDSO-G3 |
Not Qualified |
.15 W |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
X BAND |
.11 A |
.41 V |
.35 pF |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
LOW BARRIER |
150 Cel |
-55 Cel |
R-XBCC-N2 |
1 |
.1 W |
4 V |
260 |
SILICON |
|||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
150 Cel |
R-PDSO-G3 |
.15 W |
SILICON |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
YES |
Microwave Mixer Diodes |
150 Cel |
Tin/Lead (Sn/Pb) |
e0 |
SILICON |
12 GHz |
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|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1.4 pF |
1 |
SMALL OUTLINE |
Varactors |
35 V |
125 Cel |
-55 Cel |
R-PDSO-F2 |
1 |
Not Qualified |
.92 pF |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.75 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
Microwave Mixer Diodes |
150 Cel |
R-PDSO-G3 |
1 |
7 dB |
Not Qualified |
.15 W |
SILICON |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.22 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
9 dB |
ISOLATED |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
CROSSOVER RING, 4 ELEMENTS |
X BAND |
.11 A |
.41 V |
.35 pF |
SCHOTTKY |
4 |
SMALL OUTLINE |
Microwave Mixer Diodes |
LOW BARRIER |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
ANODE AND CATHODE |
Not Qualified |
.1 W |
4 V |
e3 |
260 |
SILICON |
|||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
X BAND |
.32 V |
.35 pF |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
4 V |
LOW BARRIER |
150 Cel |
GOLD |
R-XBCC-N2 |
1 |
Not Qualified |
.1 W |
LOW NOISE |
e4 |
SILICON |
||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.6 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
5.5 dB |
ISOLATED |
Not Qualified |
.1 W |
HIGH RELIABILITY |
SILICON |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
GULL WING |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.25 pF |
SCHOTTKY |
1 |
MICROWAVE |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-CXMW-G2 |
6 dB |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.75 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
125 Cel |
-55 Cel |
R-PDSO-G3 |
.15 W |
SILICON |
|||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
X BAND |
.11 A |
.41 V |
.35 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
Other Diodes |
4 V |
LOW BARRIER |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
1 |
CATHODE |
Not Qualified |
.1 W |
4 V |
e3 |
260 |
SILICON |
||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.75 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
Microwave Mixer Diodes |
150 Cel |
R-PDSO-G4 |
1 |
7 dB |
CATHODE |
Not Qualified |
.15 W |
SILICON |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
YES |
.3 V |
10 uA |
3 V |
Other Diodes |
3 V |
150 Cel |
-55 Cel |
1 |
.1 W |
260 |
||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
GULL WING |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.25 pF |
SCHOTTKY |
1 |
MICROWAVE |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-CXMW-G2 |
7.5 dB |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
X BAND |
.35 pF |
SCHOTTKY |
1 |
CHIP CARRIER |
LOW BARRIER |
150 Cel |
-55 Cel |
GOLD |
R-PBCC-N2 |
1 |
.1 W |
LOW NOISE |
e4 |
SILICON |
|||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.6 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
5.5 dB |
ISOLATED |
Not Qualified |
.1 W |
HIGH RELIABILITY |
SILICON |
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|
Infineon Technologies |
MIXER DIODE |
BOTTOM |
BALL |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
W BAND |
SCHOTTKY |
2 |
GRID ARRAY |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
R-PBGA-B6 |
Not Qualified |
.02 W |
SILICON |
8 GHz |
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|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
GULL WING |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.35 pF |
SCHOTTKY |
1 |
MICROWAVE |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-CXMW-G2 |
6.5 dB |
Not Qualified |
.1 W |
HIGH RELIABILITY |
SILICON |
||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.35 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
6.5 dB |
ISOLATED |
Not Qualified |
.1 W |
HIGH RELIABILITY |
SILICON |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.22 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
9 dB |
ISOLATED |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.75 pF |
SCHOTTKY |
2 |
SMALL OUTLINE |
150 Cel |
R-PDSO-G3 |
.15 W |
SILICON |
||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
.13 A |
.5 V |
1 pF |
SCHOTTKY |
.1 uA |
2 |
1 V |
SMALL OUTLINE |
150 Cel |
MATTE TIN |
R-PDSO-G6 |
Not Qualified |
.15 W |
8 V |
e3 |
SILICON |
||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
7.5 dB |
ISOLATED |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
|||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
SINGLE |
.25 pF |
SCHOTTKY |
1 |
LONG FORM |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-PELF-N2 |
6 dB |
ISOLATED |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
YES |
X BAND |
.11 A |
.41 V |
.35 pF |
SCHOTTKY |
Other Diodes |
LOW BARRIER |
150 Cel |
-55 Cel |
1 |
.1 W |
4 V |
260 |
SILICON |
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|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
GULL WING |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
.22 pF |
SCHOTTKY |
1 |
MICROWAVE |
Microwave Mixer Diodes |
MEDIUM BARRIER |
150 Cel |
O-CXMW-G2 |
9 dB |
Not Qualified |
.05 W |
HIGH RELIABILITY |
SILICON |
||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
ULTRA HIGH FREQUENCY |
.04 A |
1 V |
.6 pF |
SCHOTTKY |
1 |
CHIP CARRIER |
Rectifier Diodes |
40 V |
LOW BARRIER |
150 Cel |
MATTE TIN |
R-XBCC-N2 |
Not Qualified |
.1 W |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
FLAT |
2 |
YES |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
400 ohm |
S BAND |
100 A |
.41 pF |
SCHOTTKY |
1 |
MICROWAVE |
Other Diodes |
LOW BARRIER |
150 Cel |
Tin/Lead (Sn/Pb) |
S-CXMW-F2 |
Not Qualified |
250 ohm |
53 dBm |
4 V |
e0 |
0 GHz |
SILICON |
4 GHz |
|||||||||||||||||||||||
|
|
Infineon Technologies |
MIXER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
X BAND |
.09 A |
.45 V |
.35 pF |
SCHOTTKY |
1 |
SMALL OUTLINE |
Rectifier Diodes |
4 V |
LOW BARRIER |
R-PDSO-G2 |
1 |
Not Qualified |
.1 W |
LOW NOISE |
SILICON |
||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
YES |
Microwave Mixer Diodes |
150 Cel |
6.5 dB |
SILICON |
|||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MIXER DIODE |
YES |
Microwave Mixer Diodes |
150 Cel |
6.5 dB |
SILICON |
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|
Infineon Technologies |
MIXER DIODE |
UNSPECIFIED |
GULL WING |
2 |
YES |
ROUND |
GLASS |
SINGLE |
S BAND |
.35 pF |
SCHOTTKY |
1 |
MICROWAVE |
Microwave Mixer Diodes |
MEDIUM BARRIER |
O-LXMW-G2 |
5.5 dB |
Not Qualified |
2 GHz |
SILICON |
4 GHz |
Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.
A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.
A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.
Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.
Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84