NXP Semiconductors Other Function Diodes 16

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Manufacturers (1)
    • NXP Semiconductors
    • Analog Devices
    • Broadcom
    • Central Semiconductor
    • Diodes Incorporated
    • Infineon Technologies
    • Iskra Semic Capacitors Industry
    • Lion Enterprises
    • Maxim Integrated
    • Mercury Systems
    • Motorola
    • National Semiconductor
    • Onsemi
    • Philips Semiconductors
    • ROHM
    • Rca Distributor & Special Products Div
    • Renesas Electronics
    • STMicroelectronics
    • Sino-american Silicon Products
    • Skyworks Solutions
    • TDK
    • TE Connectivity
    • Texas Instruments
    • Toshiba
    • Vishay Intertechnology
    • Wetherill Associates (Wai)
Diode Type
    • RECTIFIER DIODE
Surface Mount
    • NO
    • YES
Maximum Impedance
    • 1000 ohm
    • 15000 ohm
    • 2000 ohm
    • 400 ohm
    • 500 ohm
Maximum Output Current
    • .03 A
    • .05 A
Maximum Forward Voltage (VF)
    • .13 V
    • .24 V
    • .3 V
    • .33 V
    • .34 V
    • .35 V
    • .38 V
    • .39 V
    • .4 V
    • .41 V
    • .42 V
    • .45 V
    • .48 V
    • .485 V
    • .49 V
    • .5 V
    • .52 V
    • .53 V
    • .55 V
    • .6 V
    • .65 V
    • .7 V
    • .715 V
    • .8 V
    • .85 V
    • .87 V
    • .9 V
    • .91 V
    • .95 V
    • .97 V
    • .98 V
    • 1 V
    • 1.05 V
    • 1.1 V
    • 1.15 V
    • 1.2 V
    • 1.25 V
    • 1.3 V
    • 1.5 V
    • 1.6 V
    • 1.9 V
    • 2.3 V
    • 2.5 V
    • 2.6 V
    • 2.8 V
    • 3 V
    • 3.5 V
Maximum Reverse Recovery Time
    • .004 us
    • .005 us
    • .006 us
    • .008 us
    • .01 us
    • .015 us
    • .02 us
    • .025 us
    • .05 us
    • .055 us
    • .06 us
    • .07 us
    • .085 us
    • .1 us
    • .5 us
Technology
    • SCHOTTKY
Maximum Reverse Current
    • .000005 uA
    • .01 uA
    • .05 uA
    • .1 uA
    • .15 uA
    • .2 uA
    • .5 uA
    • .7 uA
    • 1 uA
    • 1.2 uA
    • 10 uA
    • 100 uA
    • 1000 uA
    • 10000 uA
    • 110 uA
    • 11000 uA
    • 120 uA
    • 1250 uA
    • 1400 uA
    • 15 uA
    • 150 uA
    • 15000 uA
    • 2 uA
    • 2.5 uA
    • 20 uA
    • 200 uA
    • 2000 uA
    • 20000 uA
    • 3 uA
    • 30 uA
    • 300 uA
    • 30000 uA
    • 35 uA
    • 350 uA
    • 360 uA
    • 42 uA
    • 5 uA
    • 50 uA
    • 500 uA
    • 5000 uA
    • 6 uA
    • 60000 uA
    • 7.5 uA
    • 800 uA
    • 80000 uA
    • 90 uA
Reverse Test Voltage
    • 1 V
    • 10 V
    • 10.5 V
    • 100 V
    • 1000 V
    • 11.2 V
    • 12.6 V
    • 1200 V
    • 14 V
    • 15 V
    • 15.4 V
    • 150 V
    • 16 V
    • 16.8 V
    • 1700 V
    • 18.9 V
    • 2 V
    • 2.5 V
    • 20 V
    • 200 V
    • 21 V
    • 23.1 V
    • 25 V
    • 25.2 V
    • 27.3 V
    • 3 V
    • 3.3 V
    • 3.4 V
    • 30 V
    • 3300 V
    • 35 V
    • 4 V
    • 40 V
    • 400 V
    • 45 V
    • 5 V
    • 50 V
    • 6 V
    • 60 V
    • 600 V
    • 7 V
    • 7.5 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 800 V
Sub-Category
    • Other Diodes
Maximum Repetitive Peak Reverse Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 14 V
    • 15 V
    • 150 V
    • 16 V
    • 1600 V
    • 1700 V
    • 2 V
    • 20 V
    • 200 V
    • 25 V
    • 250 V
    • 3 V
    • 30 V
    • 3300 V
    • 35 V
    • 4 V
    • 4.5 V
    • 40 V
    • 400 V
    • 420 V
    • 45 V
    • 50 V
    • 60 V
    • 600 V
    • 7 V
    • 7.5 V
    • 70 V
    • 75 V
    • 8 V
    • 80 V
    • 800 V
    • 85 V
    • 90 V
Maximum Operating Temperature
    • 100 Cel
    • 110 Cel
    • 125 Cel
    • 150 Cel
    • 155 Cel
    • 175 Cel
    • 70 Cel
    • 85 Cel
Minimum Operating Temperature
    • -25 Cel
    • -40 Cel
    • -55 Cel
    • -65 Cel
    • 0 Cel
Terminal Finish
    • MATTE TIN
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL
    • TIN
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin/Bismuth (Sn/Bi)
    • Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL)
    • 1
Maximum Power Dissipation
    • .07 W
    • .1 W
    • .15 W
    • .17 W
    • .2 W
    • .23 W
    • .25 W
    • .3 W
    • .35 W
    • .4 W
    • .55 W
    • .65 W
    • 1 W
    • 1.25 W
    • 1.66 W
Minimum Impedance
    • 1000 ohm
    • 250 ohm
    • 350 ohm
    • 5000 ohm
Minimum Tangential Signal Sensitivity
    • 48 dBm
    • 53 dBm
    • 55 dBm
    • 56 dBm
JESD-609 Code
    • e0
    • e1
    • e3
    • e6
Minimum Operating Frequency
    • .00001 GHz
    • 0 GHz
    • 8 GHz
    • 8.2 GHz
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
Peak Reflow Temperature (C)
    • 260
Diode Element Material
    • SILICON
Maximum Operating Frequency
    • .1 GHz
    • 12 GHz
    • 20 GHz
    • 3 GHz
    • 4 GHz
    • 40 GHz
    • 8 GHz
Reset All
Part RoHS Manufacturer Diode Type Surface Mount Maximum Impedance Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Technology Maximum Reverse Current Reverse Test Voltage Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Moisture Sensitivity Level (MSL) Maximum Power Dissipation Minimum Impedance Minimum Tangential Signal Sensitivity JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Operating Frequency

BAT54VV/A2,115

NXP Semiconductors

YES

.24 V

2 uA

25 V

Other Diodes

30 V

125 Cel

-65 Cel

.17 W

BAV99S/G,115

NXP Semiconductors

1PS79SB70/DG,115

NXP Semiconductors

BAS40-07V/A2,115

NXP Semiconductors

YES

.38 V

10 uA

40 V

Other Diodes

40 V

150 Cel

-65 Cel

BAW56S/T3

NXP Semiconductors

YES

.715 V

.004 us

150 uA

80 V

Other Diodes

90 V

150 Cel

-65 Cel

.35 W

BAV23/T3

NXP Semiconductors

YES

1.25 V

.05 us

100 uA

200 V

Other Diodes

250 V

150 Cel

-65 Cel

.25 W

BAT74/A2,215

NXP Semiconductors

YES

.24 V

.005 us

2 uA

25 V

Other Diodes

30 V

125 Cel

-65 Cel

.23 W

BAV756ST/R

NXP Semiconductors

YES

.715 V

.004 us

150 uA

80 V

Other Diodes

90 V

150 Cel

-65 Cel

.35 W

BAS40-07,115

NXP Semiconductors

YES

.38 V

10 uA

40 V

Other Diodes

40 V

150 Cel

-65 Cel

BAS21VD/A2,135

NXP Semiconductors

YES

1 V

.05 us

100 uA

200 V

Other Diodes

250 V

150 Cel

-65 Cel

.25 W

BAP70AM/A2,135

NXP Semiconductors

YES

1.1 V

.1 uA

50 V

Other Diodes

50 V

150 Cel

-65 Cel

.3 W

BAS70/G,215

NXP Semiconductors

BAT74VT/R

NXP Semiconductors

YES

.24 V

2 uA

25 V

Other Diodes

30 V

125 Cel

-65 Cel

.23 W

BAT74/G,215

NXP Semiconductors

YES

.24 V

.005 us

2 uA

25 V

Other Diodes

30 V

125 Cel

-65 Cel

.23 W

BAP70AM/A2,115

NXP Semiconductors

YES

1.1 V

.1 uA

50 V

Other Diodes

50 V

150 Cel

-65 Cel

.3 W

BAS40-07/DG,215

NXP Semiconductors

YES

.38 V

10 uA

40 V

Other Diodes

40 V

150 Cel

-65 Cel

Other Function Diodes

Other function diodes are specialized electronic components used in various applications for specific functions or tasks. These diodes are designed to provide unique characteristics or properties that cannot be achieved by regular diodes, such as fast switching, low leakage current, or high voltage tolerance.

Some examples of other function diodes include:

1. Schottky diodes: Schottky diodes are high-speed diodes that use a metal-semiconductor junction to allow for fast switching and low forward voltage drop.

2. Zener diodes: Zener diodes are used as voltage regulators, allowing a fixed voltage to be maintained across the diode, even as the input voltage changes.

3. Varactor diodes: Varactor diodes are used as voltage-controlled capacitors, allowing for tunable capacitance in electronic circuits.

4. PIN diodes: PIN diodes are used as RF switches or attenuators due to their low insertion loss and fast switching speed.

5. Avalanche diodes: Avalanche diodes are used as voltage limiters, protecting electronic circuits from voltage surges and spikes.

Other function diodes are used in a wide range of applications, such as power supplies, communication systems, instrumentation, and medical equipment. They offer unique properties and characteristics that cannot be achieved by regular diodes, making them ideal for specific applications that require high performance and reliability.