Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Diode Resistive Test Current | Config | Frequency Band | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Maximum Diode Forward Resistance | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | Nominal Minority Carrier Lifetime | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Diode Resistive Test Frequency | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
COMMON ANODE, 2 ELEMENTS |
S BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-G3 |
1.35 ohm |
1 |
Not Qualified |
.25 W |
.52 pF |
HIGH VOLTAGE |
1.55 us |
TO-236AB |
175 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
POSITIVE-INTRINSIC-NEGATIVE |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
TIN LEAD |
R-PDSO-G3 |
1.5 ohm |
Not Qualified |
.6 pF |
.07 us |
50 V |
e0 |
SILICON |
100 MHz |
||||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
SWITCHING |
R-PDSO-G3 |
.6 ohm |
LOW DISTORTION |
.07 us |
50 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
C BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
125 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
TIN |
R-PDSO-G3 |
1.35 ohm |
1 |
.25 W |
1.55 us |
150 V |
e3 |
SILICON |
AEC-Q101 |
||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
LOW DISTORTION |
.07 us |
50 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
LOW DISTORTION |
.07 us |
50 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
HIGH FREQUENCY TO S BAND |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
0 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
LIMITER |
Matte Tin (Sn) |
R-PDSO-G3 |
1.5 ohm |
1 |
Not Qualified |
.25 W |
.7 pF |
LOW DISTORTION |
.004 us |
20 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.6 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
0 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
5 ohm |
1 |
Not Qualified |
.45 pF |
1.05 us |
50 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
||||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.6 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
R-PDSO-G3 |
1 |
Not Qualified |
.25 W |
.7 us |
150 V |
260 |
SILICON |
||||||||||||||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
SWITCHING |
TIN |
R-PDSO-G3 |
2 ohm |
1 |
.25 W |
.075 us |
50 V |
e3 |
SILICON |
||||||||||||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
POSITIVE-INTRINSIC-NEGATIVE |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
TIN LEAD |
R-PDSO-G3 |
1.5 ohm |
Not Qualified |
.6 pF |
.07 us |
50 V |
e0 |
SILICON |
100 MHz |
||||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
LOW DISTORTION |
.07 us |
50 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
COMMON CATHODE, 2 ELEMENTS |
S BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-G3 |
40 ohm |
1 |
Not Qualified |
.25 W |
.52 pF |
HIGH VOLTAGE |
1.55 us |
175 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
HIGH FREQUENCY TO L BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
Matte Tin (Sn) |
R-PDSO-G3 |
3 ohm |
1 |
Not Qualified |
.25 W |
LOW DISTORTION |
1.5 us |
200 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
LOW DISTORTION |
.07 us |
50 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
5 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
TIN LEAD |
R-PDSO-G3 |
2.5 ohm |
Not Qualified |
.2 pF |
.2 us |
100 V |
e0 |
SILICON |
100 MHz |
||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
COMMON CATHODE, 2 ELEMENTS |
.6 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
1 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
-65 Cel |
TIN |
R-PDSO-G3 |
40 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
50 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
L BAND |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
LIMITER; SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.75 pF |
LOW DISTORTION |
50 V |
e4 |
20 |
260 |
SILICON |
|||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
125 Cel |
SWITCHING |
-55 Cel |
TIN |
R-PDSO-G3 |
2 ohm |
1 |
.25 W |
.075 us |
50 V |
e3 |
SILICON |
AEC-Q101 |
||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
3 ohm |
1 |
Not Qualified |
.27 pF |
LOW DISTORTION |
1.5 us |
100 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
SWITCHING |
TIN |
R-PDSO-G3 |
.7 ohm |
1 |
.12 us |
35 V |
e3 |
SILICON |
|||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
COMMON ANODE, 2 ELEMENTS |
HIGH FREQUENCY TO L BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
Matte Tin (Sn) |
R-PDSO-G3 |
1.5 ohm |
1 |
Not Qualified |
.25 W |
LOW DISTORTION |
.7 us |
200 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
5 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
MATTE TIN |
R-PDSO-G3 |
2 ohm |
1 |
Not Qualified |
.25 W |
.25 pF |
.075 us |
50 V |
e3 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
TIN |
R-PDSO-G3 |
4 ohm |
1 |
Not Qualified |
.25 W |
.35 pF |
LOW DISTORTION |
1.5 us |
100 V |
e3 |
SILICON |
100 MHz |
||||||||||||
|
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
SWITCHING |
TIN |
R-PDSO-G3 |
2 ohm |
1 |
.25 W |
.075 us |
50 V |
e3 |
SILICON |
||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
5 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
MATTE TIN |
R-PDSO-G3 |
2.5 ohm |
1 |
Not Qualified |
.2 pF |
.2 us |
100 V |
e3 |
20 |
260 |
SILICON |
100 MHz |
||||||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
TIN LEAD |
R-PDSO-G3 |
3 ohm |
Not Qualified |
.35 pF |
100 V |
e0 |
SILICON |
100 MHz |
|||||||||||||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
COMMON CATHODE, 2 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
TIN LEAD |
R-PDSO-G3 |
1.5 ohm |
Not Qualified |
.6 pF |
.07 us |
50 V |
e0 |
SILICON |
100 MHz |
||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
MATTE TIN |
R-PDSO-G3 |
22 ohm |
1 |
Not Qualified |
.2 pF |
LOW DISTORTION |
.5 us |
50 V |
e3 |
20 |
260 |
SILICON |
100 MHz |
||||||||||||
Infineon Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
SWITCHING |
R-PDSO-G3 |
2 ohm |
.25 W |
.075 us |
50 V |
SILICON |
||||||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
SINGLE |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
3 ohm |
1 |
Not Qualified |
.27 pF |
LOW DISTORTION |
1.5 us |
100 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
|||||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
TIN LEAD |
R-PDSO-G3 |
Not Qualified |
LOW DISTORTION |
.5 us |
50 V |
e0 |
SILICON |
|||||||||||||||||||||||
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
HIGH FREQUENCY TO L BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
Tin/Lead (Sn/Pb) |
R-PDSO-G3 |
2 ohm |
1 |
Not Qualified |
.25 W |
LOW DISTORTION |
1 us |
200 V |
e0 |
30 |
245 |
SILICON |
100 MHz |
||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SINGLE |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
5 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
2.5 ohm |
1 |
Not Qualified |
.2 pF |
.2 us |
100 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||||
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
TIN LEAD |
R-PDSO-G3 |
3 ohm |
Not Qualified |
.35 pF |
100 V |
e0 |
SILICON |
100 MHz |
|||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
3 ohm |
1 |
Not Qualified |
.27 pF |
LOW DISTORTION |
1.5 us |
100 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.34 V |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
.1 uA |
2 |
1 V |
SMALL OUTLINE |
Other Diodes |
50 V |
150 Cel |
LIMITER |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.07 us |
50 V |
e3 |
20 |
260 |
SILICON |
|||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.34 V |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
.1 uA |
2 |
1 V |
SMALL OUTLINE |
Other Diodes |
50 V |
150 Cel |
LIMITER |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.07 us |
50 V |
e3 |
20 |
260 |
SILICON |
|||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.34 V |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
.1 uA |
2 |
1 V |
SMALL OUTLINE |
Other Diodes |
50 V |
150 Cel |
LIMITER |
-65 Cel |
MATTE TIN |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.07 us |
50 V |
e3 |
20 |
260 |
SILICON |
|||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.375 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
LIMITER |
MATTE TIN |
R-PDSO-G3 |
2.5 ohm |
1 |
Not Qualified |
.2 us |
100 V |
e3 |
SILICON |
|||||||||||||||||||
|
Onsemi |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
SMALL OUTLINE |
PIN Diodes |
125 Cel |
SWITCHING |
TIN |
R-PDSO-G3 |
1 ohm |
1 |
Not Qualified |
.2 W |
1 pF |
HIGH VOLTAGE |
TO-236AB |
200 V |
e3 |
30 |
260 |
SILICON |
||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
S BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-G3 |
1.35 ohm |
1 |
Not Qualified |
.24 W |
.52 pF |
1.55 us |
100 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
||||||||||
Hewlett Packard |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
ATTENUATOR |
R-PDSO-G3 |
Not Qualified |
.25 W |
LOW DISTORTION |
1.5 us |
100 V |
SILICON |
|||||||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
3 ohm |
1 |
Not Qualified |
.27 pF |
LOW DISTORTION |
1.5 us |
100 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
|||||||||||
Agilent Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON CATHODE, 2 ELEMENTS |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
Tin/Lead (Sn/Pb) |
R-PDSO-G3 |
4 ohm |
Not Qualified |
.25 W |
1.5 us |
100 V |
e0 |
SILICON |
100 MHz |
|||||||||||||||||
Agilent Technologies |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.37 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
TIN LEAD |
R-PDSO-G3 |
2 ohm |
Not Qualified |
.25 W |
.37 pF |
LOW DISTORTION |
1.8 us |
100 V |
e0 |
SILICON |
100 MHz |
||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
COMMON CATHODE, 2 ELEMENTS |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
LOW DISTORTION |
.07 us |
50 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
MATTE TIN |
R-PDSO-G3 |
22 ohm |
1 |
Not Qualified |
.2 pF |
LOW DISTORTION |
.5 us |
50 V |
e3 |
20 |
260 |
SILICON |
100 MHz |
PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.
PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.
PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.
PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.