RECTANGULAR PIN Diodes 1,441

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Diode Resistive Test Current Config Frequency Band Maximum Forward Voltage (VF) Maximum Diode Capacitance Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish JESD-30 Code Maximum Diode Forward Resistance Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features Nominal Minority Carrier Lifetime JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Diode Resistive Test Frequency Reference Standard

SMP1340-011LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

HIGH FREQUENCY TO S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

5 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Matte Tin (Sn)

R-PDSO-G2

1.2 ohm

1

Not Qualified

.25 W

.21 pF

.1 us

50 V

e3

40

260

SILICON

100 MHz

SMP1345-079LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

C BAND

.2 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

ATTENUATOR; SWITCHING

Matte Tin (Sn)

R-PDSO-G2

2 ohm

1

ISOLATED

Not Qualified

.25 W

.1 us

e3

40

260

SILICON

DSG9500-000

Skyworks Solutions

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

L BAND TO KU BAND

.02 pF

POSITIVE-INTRINSIC-NEGATIVE

1

MICROWAVE

ATTENUATOR; LIMITER; SWITCHING

R-XDMW-F2

4 ohm

Not Qualified

.25 W

.25 us

200 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

SMP1302-079LF

Skyworks Solutions

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SINGLE

HIGH FREQUENCY TO L BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

Matte Tin (Sn)

R-PDSO-F2

1.5 ohm

1

Not Qualified

.25 W

LOW DISTORTION

.7 us

200 V

e3

40

260

SILICON

100 MHz

BAP51-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

.55 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G2

2.5 ohm

1

Not Qualified

.5 W

.55 pF

.55 us

60 V

e3

30

260

SILICON

100 MHz

HSMP-389R-BLKG

Broadcom

PIN DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

4

5 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

MATTE TIN

R-PDSO-G6

2.5 ohm

1

Not Qualified

.2 pF

.2 us

100 V

e3

20

260

SILICON

100 MHz

SMP1304-079LF

Skyworks Solutions

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY TO L BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

ATTENUATOR

R-PDSO-F2

2 ohm

Not Qualified

.25 W

1 us

NOT SPECIFIED

NOT SPECIFIED

SILICON

SMP1320-079LF

Skyworks Solutions

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

HIGH FREQUENCY TO S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Matte Tin (Sn)

R-PDSO-F2

.9 ohm

1

ISOLATED

Not Qualified

.25 W

.3 pF

.4 us

50 V

e3

40

260

SILICON

100 MHz

SMP1340-007LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

HIGH FREQUENCY TO S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

5 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Matte Tin (Sn)

R-PDSO-G3

1.2 ohm

1

Not Qualified

.25 W

.21 pF

.1 us

50 V

e3

40

260

SILICON

100 MHz

RN141CMT2R

ROHM

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

3 mA

SINGLE

VERY HIGH FREQUENCY

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

150 Cel

SWITCHING

TIN

R-PDSO-F2

2 ohm

HIGH RELIABILITY

50 V

e3

SILICON

100 MHz

SMP1307-005LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

100 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY TO L BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR

Matte Tin (Sn)

R-PDSO-G3

3 ohm

1

Not Qualified

.25 W

LOW DISTORTION

1.5 us

200 V

e3

40

260

SILICON

100 MHz

SMP1322-005LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY TO S BAND

1 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

-65 Cel

Matte Tin (Sn)

R-PDSO-G3

1.5 ohm

1

Not Qualified

.75 W

.4 us

50 V

e3

40

260

SILICON

100 MHz

SMP1322-079LF

Skyworks Solutions

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SINGLE

HIGH FREQUENCY TO S BAND

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

-65 Cel

MATTE TIN

R-PDSO-F2

1.5 ohm

1

Not Qualified

.75 W

.4 us

50 V

e3

40

260

SILICON

100 MHz

SMP1340-079LF

Skyworks Solutions

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

HIGH FREQUENCY TO S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

5 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Matte Tin (Sn)

R-PDSO-F2

1.2 ohm

1

Not Qualified

.25 W

.21 pF

.1 us

50 V

e3

40

260

SILICON

100 MHz

ASML-5829-BLKG

Broadcom

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.375 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

LIMITER

MATTE TIN

R-PDSO-G3

2.5 ohm

1

Not Qualified

.2 us

100 V

e3

SILICON

HSMP-3824-TR2G

Broadcom

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

COMMON CATHODE, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

.6 ohm

1

Not Qualified

.25 W

.6 pF

LOW DISTORTION

.07 us

50 V

e4

20

260

SILICON

100 MHz

HSMP-3833-BLKG

Broadcom

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

100 mA

COMMON ANODE, 2 ELEMENTS

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

1.5 ohm

1

Not Qualified

.25 W

.3 pF

LOW DISTORTION

.5 us

200 V

e4

20

260

SILICON

100 MHz

HSMP-386L-TR1G

Broadcom

PIN DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 3 ELEMENTS

POSITIVE-INTRINSIC-NEGATIVE

3

50 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

MATTE TIN

R-PDSO-G6

1

Not Qualified

.2 pF

LOW DISTORTION

.5 us

50 V

e3

20

260

SILICON

RN142SMT2R

ROHM

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

1

1 V

SMALL OUTLINE

150 Cel

SWITCHING

TIN

R-PDSO-F2

2 ohm

HIGH RELIABILITY

60 V

e3

SILICON

100 MHz

SMP1320-040LF

Skyworks Solutions

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

S BAND

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

CHIP CARRIER

PIN Diodes

175 Cel

SWITCHING

R-PBCC-N2

.9 ohm

1

Not Qualified

.75 W

.23 pF

.4 us

50 V

40

260

SILICON

100 MHz

SMP1320-077LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

HIGH FREQUENCY TO S BAND

.45 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Tin (Sn)

R-PDSO-G3

.9 ohm

1

ISOLATED

Not Qualified

.25 W

.3 pF

.4 us

50 V

e3

40

260

SILICON

100 MHz

SMP1321-005LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY TO S BAND

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

Matte Tin (Sn)

R-PDSO-G3

2 ohm

1

ISOLATED

Not Qualified

.25 W

.4 us

e3

40

260

SILICON

SMP1321-040LF

Skyworks Solutions

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY TO S BAND

.25 pF

POSITIVE-INTRINSIC-NEGATIVE

1

CHIP CARRIER

175 Cel

SWITCHING

R-PBCC-N2

2 ohm

1

Not Qualified

.75 W

.4 us

40

260

SILICON

SMP1331-040LF

Skyworks Solutions

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SINGLE

HIGH FREQUENCY TO X BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

CHIP CARRIER

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

R-PBCC-N2

14.5 ohm

.25 W

.18 pF

LOW DISTORTION

.6 us

NOT SPECIFIED

NOT SPECIFIED

SILICON

100 MHz

SMP1340-040LF

Skyworks Solutions

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

5 mA

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

5 V

CHIP CARRIER

PIN Diodes

175 Cel

SWITCHING

-55 Cel

R-XBCC-N2

1.2 ohm

1

Not Qualified

.75 W

.21 pF

.1 us

50 V

40

260

SILICON

100 MHz

SMP1345-004LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

C BAND

.2 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

ATTENUATOR; SWITCHING

Matte Tin (Sn)

R-PDSO-G3

2 ohm

1

ISOLATED

Not Qualified

.25 W

.1 us

e3

40

260

SILICON

SMP1345-518

Skyworks Solutions

PIN DIODE

BOTTOM

BUTT

4

YES

RECTANGULAR

PLASTIC/EPOXY

RING, 4 ELEMENTS

C BAND

.2 pF

POSITIVE-INTRINSIC-NEGATIVE

4

GRID ARRAY

ATTENUATOR; SWITCHING

R-PBGA-B4

2 ohm

1

ISOLATED

Not Qualified

.25 W

.1 us

30

260

SILICON

SMP1352-005LF

Skyworks Solutions

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY TO S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

SWITCHING

R-PDSO-G3

1.35 ohm

Not Qualified

.25 W

LOW DISTORTION

1 us

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAP64-03,115

NXP Semiconductors

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G2

1.35 ohm

1

Not Qualified

.5 W

.52 pF

HIGH VOLTAGE

1.55 us

175 V

e3

30

260

SILICON

100 MHz

MA4P604-255

M/a-com Technology Solutions

PIN DIODE

END

NO LEAD

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

100 mA

SINGLE

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

DISK BUTTON

PIN Diodes

175 Cel

SWITCHING

R-CEDB-N2

1 ohm

CATHODE

Not Qualified

HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT

3 us

1000 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

MSWSE-010-15S

M/a-com Technology Solutions

PIN DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

100 mA

SINGLE

S BAND

.22 pF

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

175 Cel

SWITCHING

R-PDSO-N2

.8 ohm

.17 pF

.65 us

200 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

500 MHz

UPP9401E3/TR7

Microchip Technology

PIN DIODE

SINGLE

GULL WING

1

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

-55 Cel

MATTE TIN

R-PSSO-G1

1 ohm

ANODE

Not Qualified

2.5 W

LOW DISTORTION

2 us

50 V

e3

SILICON

MMBV3401LT1

Onsemi

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

Tin/Lead (Sn/Pb)

R-PDSO-G3

.7 ohm

1

Not Qualified

.2 W

1 pF

HIGH RELIABILITY

TO-236AB

35 V

e0

30

235

SILICON

100 MHz

MMBV3401LT3

Onsemi

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

Tin/Lead (Sn/Pb)

R-PDSO-G3

.7 ohm

1

Not Qualified

TO-236AB

35 V

e0

30

235

SILICON

100 MHz

MMBV3700LT1

Onsemi

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

Tin/Lead (Sn/Pb)

R-PDSO-G3

1 ohm

1

Not Qualified

.2 W

1 pF

HIGH VOLTAGE

TO-236AB

200 V

e0

30

235

SILICON

NSVDP301MX2WT5G

Onsemi

PIN DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

150 Cel

ATTENUATOR; SWITCHING

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

.33 pF

80 V

e4

30

260

SILICON

AEC-Q101

NSP301MX3T5G

Onsemi

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

.23 pF

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

CHIP CARRIER

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

R-PBCC-N2

2 ohm

.23 pF

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1 MHz

NSDP301MX3T5G

Onsemi

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

CHIP CARRIER

150 Cel

ATTENUATOR; SWITCHING

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

.33 pF

80 V

e4

30

260

SILICON

CPH5513

Onsemi

PIN DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

.1 uA

2

50 V

SMALL OUTLINE

Other Diodes

50 V

125 Cel

-55 Cel

R-PDSO-G5

2.5 ohm

Not Qualified

.35 W

SILICON

MMVL3700T1

Onsemi

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Tin/Lead (Sn/Pb)

R-PDSO-G2

1 ohm

1

Not Qualified

.2 W

HIGH VOLTAGE

200 V

e0

30

235

SILICON

NSVP249SDSF3T1G

Onsemi

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.23 pF

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

-55 Cel

TIN BISMUTH

R-PDSO-G3

4.5 ohm

1

.1 W

.23 pF

50 V

e6

30

260

SILICON

100 MHz

AEC-Q101

NSVP264SDSF3T1G

Onsemi

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

4.5 ohm

.1 W

.23 pF

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

100 MHz

AEC-Q101

MMVL3401T1G

Onsemi

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN

R-PDSO-G2

.7 ohm

1

Not Qualified

.2 W

35 V

e3

30

260

SILICON

100 MHz

NSDP301MX2WT5G

Onsemi

PIN DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

POSITIVE-INTRINSIC-NEGATIVE

1

80 V

SMALL OUTLINE

150 Cel

ATTENUATOR; SWITCHING

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

1

.33 pF

e4

30

260

SILICON

NSP301MX2WT5G

Onsemi

PIN DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY

.23 pF

POSITIVE-INTRINSIC-NEGATIVE

1

50 V

SMALL OUTLINE

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

R-PDSO-N2

2 ohm

.23 pF

NOT SPECIFIED

NOT SPECIFIED

SILICON

1 MHz

MMBV3401LT3G

Onsemi

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

125 Cel

SWITCHING

TIN

R-PDSO-G3

.7 ohm

1

Not Qualified

.2 W

TO-236AB

35 V

e3

30

260

SILICON

100 MHz

MMVL3700T1G

Onsemi

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN

R-PDSO-G2

1 ohm

1

Not Qualified

.2 W

HIGH VOLTAGE

200 V

e3

30

260

SILICON

MMVL3401T1

Onsemi

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

VERY HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

Tin/Lead (Sn/Pb)

R-PDSO-G2

.7 ohm

1

Not Qualified

.2 W

35 V

e0

30

235

SILICON

100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.