YES PIN Diodes 1,776

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
HVM14SRTL-E	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR		TIN BISMUTH	R-PDSO-G3	7 ohm	1		Not Qualified	.1 W			50 V	e6			SILICON
RKP300WKQE	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-G3	3.7 ohm			Not Qualified	.2 W	.25 pF		30 V				SILICON	100 MHz
RKP204KP	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	CHIP CARRIER	PIN Diodes		125 Cel	SWITCHING			R-PBCC-N2	1.1 ohm	1		Not Qualified	.1 W	.35 pF		30 V				SILICON	100 MHz
HVU134	Renesas Electronics	PIN DIODE				YES			10 mA										PIN Diodes		125 Cel					2 ohm							60 V					100 MHz
HVM14STL	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR		TIN LEAD	R-PDSO-G3	7 ohm			Not Qualified	.1 W			50 V	e0			SILICON
HVB190S	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR			R-PDSO-G3	5 ohm			Not Qualified	.1 W			50 V				SILICON	100 MHz
RKP301KJ	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	2.5 ohm			Not Qualified	.15 W	.3 pF		30 V				SILICON	100 MHz
HVD144A	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE			.43 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	1.8 ohm			Not Qualified	.15 W							SILICON	100 MHz
RKP406KS#P1	Renesas Electronics	PIN DIODE				YES			2 mA										PIN Diodes		125 Cel					2 ohm							30 V					100 MHz
RKP453KE#R0	Renesas Electronics	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel					1.3 ohm					.35 pF		30 V					100 MHz
HVC145	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	1.8 ohm			Not Qualified	.15 W			60 V				SILICON	100 MHz
HVM187STL	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		2.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR		TIN LEAD	R-PDSO-G3	5.5 ohm			Not Qualified	.1 W			60 V	e0			SILICON
RKP414KS	Renesas Electronics	PIN DIODE	DUAL	FLAT	12	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 6 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		6	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F12	1.3 ohm			Not Qualified		.35 pF		30 V				SILICON	100 MHz
HVC132KRF	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				SWITCHING		TIN LEAD	R-PDSO-F2	2 ohm			Not Qualified	.15 W			60 V	e0			SILICON
HVC142A	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN LEAD	R-PDSO-F2	1.3 ohm			Not Qualified	.15 W			30 V	e0			SILICON	100 MHz
HVM14STL-E	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR		TIN BISMUTH	R-PDSO-G3	7 ohm	1		Not Qualified	.1 W			50 V	e6			SILICON
HVU187TRV	Renesas Electronics	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		2.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR			R-PDSO-G2	5.5 ohm			Not Qualified	.1 W			60 V				SILICON
HVD133A	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	.7 ohm			Not Qualified	.15 W			30 V				SILICON	100 MHz
HVD145	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	1.8 ohm			Not Qualified	.15 W			60 V				SILICON	100 MHz
HVC142	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	SWITCHING			R-PDSO-F2	1.5 ohm			Not Qualified	.15 W							SILICON
HVL144A	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE			.43 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	1.8 ohm			Not Qualified	.1 W			30 V				SILICON	100 MHz
5082-3900	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SINGLE			.025 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE				ATTENUATOR; LIMITER; SWITCHING			R-CDMW-F2	8 ohm			Not Qualified	.25 W		.15 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3864-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
5082-3305	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	.7 W			70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3041	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	METAL		SINGLE	HIGH FREQUENCY TO KU BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		FLANGE MOUNT			125 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-MDFM-F2	1 ohm		CATHODE	Not Qualified	1 W		.035 us					SILICON
HMPP-389T-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
HPND-0002	Broadcom	PIN DIODE	UPPER	NO LEAD	2	YES	SQUARE	UNSPECIFIED		SINGLE			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-65 Cel	GOLD	S-XUUC-N2		1	ANODE	Not Qualified	.25 W	.2 pF	1.5 us	100 V	e4			SILICON
5082-3304	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W		.1 us	250 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3895-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-0047	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE			.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified			.4 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3864-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HMPP-3893-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
HMPP-3865	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SEPARATE, 2 ELEMENTS			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3863-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HMPP-3860-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF	.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3864-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified			.5 us	50 V	e3			SILICON
HPND-4028	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE			.045 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	MICROWAVE	PIN Diodes		150 Cel	SWITCHING		GOLD	R-XDMW-F2	3 ohm	1		Not Qualified		.045 pF	.036 us	60 V	e4		220	SILICON	100 MHz
ASML-5822-TR2	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	TIN LEAD	R-PDSO-G3	.6 ohm			Not Qualified			.07 us	50 V	e0			SILICON
HMPP-389T	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED						POSITIVE-INTRINSIC-NEGATIVE				UNCASED CHIP			150 Cel			Tin (Sn)	R-XUUC-N4		1		Not Qualified					e3	20	260	SILICON
HMPP-3895	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified			.2 us	50 V	e3	20	260	SILICON
HMPP-3893-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
HPND-4005	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE			.02 pF	POSITIVE-INTRINSIC-NEGATIVE		1	10 V	MICROWAVE	PIN Diodes		175 Cel	ATTENUATOR; LIMITER; SWITCHING	-65 Cel		R-CDMW-F2	6.5 ohm			Not Qualified	.25 W	.017 pF	.1 us	100 V			220	SILICON	100 MHz
HMPP-3894-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
5082-3306	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	1.25 W			70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ASML-5822-BLK	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	TIN LEAD	R-PDSO-G3	.6 ohm			Not Qualified			.07 us	50 V	e0			SILICON
HMPP-3894-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified			.2 us	100 V	e3			SILICON
5082-3303	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W		.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3892-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF	.2 us	100 V	e3	20	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.