YES PIN Diodes 1,776

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
SMP1325-085LF	Skyworks Solutions	PIN DIODE	DUAL	C BEND	2	YES	SQUARE	PLASTIC/EPOXY	100 mA	SINGLE	HIGH FREQUENCY TO C BAND		.65 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			S-PDSO-C2	.5 ohm	1	CATHODE		3 W	.56 pF	LOW DISTORTION	5 us		200 V				260	SILICON	100 MHz
SMP1331-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	HIGH FREQUENCY TO X BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	14.5 ohm				.25 W	.18 pF	LOW DISTORTION	.6 us					NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
SMP1340-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		175 Cel	SWITCHING	-55 Cel		R-XBCC-N2	1.2 ohm	1		Not Qualified	.75 W	.21 pF		.1 us		50 V			40	260	SILICON	100 MHz
SMP1345-004LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-G3	2 ohm	1	ISOLATED	Not Qualified	.25 W			.1 us				e3	40	260	SILICON
SMP1345-518	Skyworks Solutions	PIN DIODE	BOTTOM	BUTT	4	YES	RECTANGULAR	PLASTIC/EPOXY		RING, 4 ELEMENTS	C BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		4		GRID ARRAY				ATTENUATOR; SWITCHING			R-PBGA-B4	2 ohm	1	ISOLATED	Not Qualified	.25 W			.1 us					30	260	SILICON
SMP1352-005LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY TO S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-G3	1.35 ohm			Not Qualified	.25 W		LOW DISTORTION	1 us					NOT SPECIFIED	NOT SPECIFIED	SILICON
UMX9989AP	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SERIES CONNECTED, 2 ELEMENTS	VERY HIGH FREQUENCY	.4 V	8 pF	POSITIVE-INTRINSIC-NEGATIVE		2		LONG FORM	Other Diodes		150 Cel	GENERAL PURPOSE	-65 Cel		O-XELF-R2			ISOLATED			4 pF					2 A				SILICON
BAP64-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.35 ohm	1		Not Qualified	.5 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V		e3	30	260	SILICON	100 MHz
GC4430-00	Microchip Technology	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND		.1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	Gold (Au)	S-XUUC-N1	1.5 ohm			Not Qualified			HIGH RELIABILITY, LOW DISTORTION	.6 us		300 V		e4			SILICON	100 MHz	MIL-19500
GC4701-6LP	Microchip Technology	PIN DIODE	DUAL	NO LEAD	6	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	X BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	16 V	SMALL OUTLINE			150 Cel	ATTENUATOR; LIMITER	-55 Cel		S-PDSO-N6	2 ohm					.45 pF		.01 us		20 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1000 MHz
GC4750-42	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED		SINGLE	KU BAND			POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE				LIMITER			O-XEMW-N2				Not Qualified						250 V					SILICON
GC4941-12	Microchip Technology	PIN DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED	UNSPECIFIED	10 mA	SINGLE	KU BAND		.06 pF	POSITIVE-INTRINSIC-NEGATIVE		1	10 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		GOLD	X-XXMW-F2	1.5 ohm			Not Qualified		.06 pF		.05 us		50 V		e4			SILICON	2200 MHz
MA4L021-120	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO KU BAND			POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			175 Cel	LIMITER			O-CEMW-N2				Not Qualified			LOW LEAKAGE			35 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
MA4P604-255	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		DISK BUTTON	PIN Diodes		175 Cel	SWITCHING			R-CEDB-N2	1 ohm		CATHODE	Not Qualified			HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT	3 us		1000 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
MA4P7104F-1072T	TE Connectivity	PIN DIODE				YES			100 mA								100 V		PIN Diodes		175 Cel					.5 ohm					1 pF		2.5 us		400 V						100 MHz
MA4P7461F-1072T	TE Connectivity	PIN DIODE				YES			100 mA								100 V		PIN Diodes		125 Cel					.5 ohm					1 pF		6 us		100 V						100 MHz
MSWSE-010-15S	M/a-com Technology Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SINGLE	S BAND		.22 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE			175 Cel	SWITCHING			R-PDSO-N2	.8 ohm					.17 pF		.65 us		200 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
UPP9401E3/TR7	Microchip Technology	PIN DIODE	SINGLE	GULL WING	1	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PSSO-G1	1 ohm		ANODE	Not Qualified	2.5 W		LOW DISTORTION	2 us		50 V		e3			SILICON
MMBV3401LT1	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		Tin/Lead (Sn/Pb)	R-PDSO-G3	.7 ohm	1		Not Qualified	.2 W	1 pF	HIGH RELIABILITY		TO-236AB	35 V		e0	30	235	SILICON	100 MHz
MMBV3401LT3	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		Tin/Lead (Sn/Pb)	R-PDSO-G3	.7 ohm	1		Not Qualified					TO-236AB	35 V		e0	30	235	SILICON	100 MHz
MMBV3700LT1	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		Tin/Lead (Sn/Pb)	R-PDSO-G3	1 ohm	1		Not Qualified	.2 W	1 pF	HIGH VOLTAGE		TO-236AB	200 V		e0	30	235	SILICON
NSVDP301MX2WT5G	Onsemi	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PDSO-N2		1				.33 pF				80 V		e4	30	260	SILICON		AEC-Q101
NSP301MX3T5G	Onsemi	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.23 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PBCC-N2	2 ohm					.23 pF				50 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1 MHz
NSDP301MX3T5G	Onsemi	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PBCC-N2		1				.33 pF				80 V		e4	30	260	SILICON
1SV315	Onsemi	PIN DIODE				YES											50 V		PIN Diodes		125 Cel										.23 pF				50 V
CPH5513	Onsemi	PIN DIODE	DUAL	GULL WING	5	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	50 V	SMALL OUTLINE	Other Diodes	50 V	125 Cel		-55 Cel		R-PDSO-G5	2.5 ohm			Not Qualified	.35 W										SILICON
MMVL3700T1	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		Tin/Lead (Sn/Pb)	R-PDSO-G2	1 ohm	1		Not Qualified	.2 W		HIGH VOLTAGE			200 V		e0	30	235	SILICON
NSVP249SDSF3T1G	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.23 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE			125 Cel		-55 Cel	TIN BISMUTH	R-PDSO-G3	4.5 ohm	1			.1 W	.23 pF				50 V		e6	30	260	SILICON	100 MHz	AEC-Q101
NSVP264SDSF3T1G	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE			125 Cel		-55 Cel		R-PDSO-G3	4.5 ohm				.1 W	.23 pF				50 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz	AEC-Q101
MMVL3401T1G	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G2	.7 ohm	1		Not Qualified	.2 W					35 V		e3	30	260	SILICON	100 MHz
NSDP301MX2WT5G	Onsemi	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	80 V	SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	NICKEL PALLADIUM GOLD	R-PDSO-N2		1				.33 pF						e4	30	260	SILICON
NSP301MX2WT5G	Onsemi	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.23 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-N2	2 ohm					.23 pF							NOT SPECIFIED	NOT SPECIFIED	SILICON	1 MHz
MMBV3401LT3G	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified	.2 W				TO-236AB	35 V		e3	30	260	SILICON	100 MHz
1SV316	Onsemi	PIN DIODE				YES			10 mA								50 V		PIN Diodes		125 Cel					9 ohm					.23 pF				50 V						100 MHz
MMVL3700T1G	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN	R-PDSO-G2	1 ohm	1		Not Qualified	.2 W		HIGH VOLTAGE			200 V		e3	30	260	SILICON
MMVL3401T1	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		Tin/Lead (Sn/Pb)	R-PDSO-G2	.7 ohm	1		Not Qualified	.2 W					35 V		e0	30	235	SILICON	100 MHz
MMBV3401LT1G	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified	.2 W	1 pF	HIGH RELIABILITY		TO-236AB	35 V		e3	30	260	SILICON	100 MHz
1SV251	Onsemi	PIN DIODE				YES													PIN Diodes							4.5 ohm					.23 pF				50 V
1SV250	Onsemi	PIN DIODE				YES													PIN Diodes							4.5 ohm					.23 pF				50 V
1SV264	Onsemi	PIN DIODE				YES													PIN Diodes							2.5 ohm					.23 pF				50 V
1SV249	Onsemi	PIN DIODE				YES													PIN Diodes							4.5 ohm					.23 pF				50 V
1SV234	Onsemi	PIN DIODE				YES													PIN Diodes							5 ohm					.23 pF				50 V
1SV246	Onsemi	PIN DIODE				YES													PIN Diodes							5 ohm					.23 pF				50 V
1SV247	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.23 pF			1		SMALL OUTLINE	PIN Diodes							5 ohm					.23 pF				50 V					SILICON
1SV294	Onsemi	PIN DIODE				YES													PIN Diodes							7.5 ohm					.23 pF				50 V
1SV233	Onsemi	PIN DIODE				YES													PIN Diodes							5 ohm					.23 pF				50 V
1SV266	Onsemi	PIN DIODE				YES													PIN Diodes							2.5 ohm					.23 pF				50 V
1SV263	Onsemi	PIN DIODE				YES													PIN Diodes							2.5 ohm					.23 pF				50 V

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.