WRAP AROUND PIN Diodes 17

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
UM6606SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM				ATTENUATOR; SWITCHING		TIN LEAD	O-XELF-R2	2.5 ohm	ISOLATED	Not Qualified	4.5 W			1 us	600 V		e0	SILICON
UM9415SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm	ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V		e0	SILICON	100 MHz
UM9401SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm	ISOLATED	Not Qualified	1.5 W	1.5 pF	LOW DISTORTION	2 us	50 V		e0	SILICON	100 MHz
UMX9989SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS		SINGLE	MEDIUM FREQUENCY TO VERY HIGH FREQUENCY	1 V	5 pF		1	0 V	LONG FORM	Rectifier Diodes	75 V	150 Cel	LIMITER	-65 Cel		O-LELF-R2		ISOLATED			1.2 pF			75 V	2.5 A		SILICON
UMX9989AP	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SERIES CONNECTED, 2 ELEMENTS	VERY HIGH FREQUENCY	.4 V	8 pF	POSITIVE-INTRINSIC-NEGATIVE	2		LONG FORM	Other Diodes		150 Cel	GENERAL PURPOSE	-65 Cel		O-XELF-R2		ISOLATED			4 pF				2 A		SILICON
BXY43-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3	SILICON	100 MHz
BXY43-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3	SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3	SILICON	100 MHz	ESA-SCC-5513/030
BXY42-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3	SILICON	100 MHz
BXY42-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3	SILICON	100 MHz
BXY42-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3	SILICON	100 MHz	ESA-SCC-5513/017
BXY44-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3	SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3	SILICON	100 MHz
BXY43-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3	SILICON	100 MHz
BXY44-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3	SILICON	100 MHz	ESA-SCC-5513/030
BXY42-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3	SILICON	100 MHz
BXY44-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3	SILICON	100 MHz	ESA-SCC-5513/030

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.