AXIAL PIN Diodes 46

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Diode Element Material	Diode Resistive Test Frequency
UM6601B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm		ISOLATED	Not Qualified	2.5 W	.4 pF		1 us		100 V	e0	SILICON	100 MHz
UM6610B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm		ISOLATED	Not Qualified	2.5 W	.4 pF		1 us		1000 V	e0	SILICON	100 MHz
UM9415	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	50 mA	SINGLE		4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us		50 V	e0	SILICON	100 MHz
UM9415B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes		SWITCHING		TIN LEAD	O-XALF-W2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us		50 V	e0	SILICON	100 MHz
UM4001B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	HIGH FREQUENCY TO S BAND	3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes		ATTENUATOR; SWITCHING		TIN LEAD	O-XALF-W2	.5 ohm		ISOLATED	Not Qualified	2.5 W	2.4 pF	LOW DISTORTION	10 us			e0	SILICON	100 MHz
5082-3080	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		100 V	e0	SILICON	100 MHz
5082-3081	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us		100 V	e0	SILICON	100 MHz
UM9441	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ELLIPTICAL	UNSPECIFIED		SINGLE	MEDIUM FREQUENCY	10 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	175 Cel		-55 Cel	TIN LEAD	E-XALF-W2			ISOLATED	Not Qualified			HIGH RELIABILITY	2 us		100 V	e0	SILICON
BAQ800	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified			LOW LEAKAGE, LOW DISTORTION	20 us				SILICON
BAQ800T/R	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified			LOW LEAKAGE, LOW DISTORTION	20 us				SILICON
934050600133	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified				25 us				SILICON
934050600113	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	6 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified				25 us				SILICON
1SV121TE	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
1SV121TD	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
1SV121TAX	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
1SV121TDX	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
1SV121RX	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
1SV121RY	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
1SV121TA	Renesas Electronics	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	HIGH FREQUENCY	.7 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified	.25 W		HIGH RELIABILITY		DO-34	100 V		SILICON
5082-3080#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		100 V	e0	SILICON	100 MHz
5082-3188#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	LONG FORM	PIN Diodes	150 Cel	SWITCHING			O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us		35 V		SILICON	100 MHz
5082-3039	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		150 V	e0	SILICON	100 MHz
5082-3188#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	LONG FORM	PIN Diodes	150 Cel	SWITCHING			O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us		35 V		SILICON	100 MHz
1N5767#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		100 V	e0	SILICON	100 MHz
5082-3039#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		150 V	e0	SILICON	100 MHz
5082-3001#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		200 V		SILICON	100 MHz
5082-3379#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2		1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		50 V	e0	SILICON
5082-3077#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us		200 V	e0	SILICON	100 MHz
HPND-4166	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM		150 Cel	ATTENUATOR	-65 Cel		O-LALF-W2	1.5 ohm		ISOLATED	Not Qualified	.25 W			.1 us		100 V		SILICON
1N5767	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		100 V	e0	SILICON	100 MHz
5082-3379#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2		1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		50 V	e0	SILICON
HPND-4166G	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM		150 Cel	ATTENUATOR	-65 Cel		O-LALF-W2	1.5 ohm		ISOLATED	Not Qualified	.25 W			.1 us		100 V		SILICON
5082-3077	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us		200 V	e0	SILICON	100 MHz
5082-3081#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us		100 V	e0	SILICON	100 MHz
5082-3080#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		100 V	e0	SILICON	100 MHz
5082-3379	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	8 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us		50 V	e0	SILICON	100 MHz
5082-3081#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us		100 V	e0	SILICON	100 MHz
5082-3188	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	LONG FORM	PIN Diodes	150 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us		35 V	e0	SILICON	100 MHz
5082-3001#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		200 V		SILICON	100 MHz
1N5719	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		150 V	e0	SILICON	100 MHz
5082-3077#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us		200 V	e0	SILICON	100 MHz
1N5719#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us		150 V	e0	SILICON	100 MHz
5082-3039#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		150 V	e0	SILICON	100 MHz
1N5719#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us		150 V	e0	SILICON	100 MHz
1N5767#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR; SWITCHING			O-LALF-W2	2.5 ohm		ISOLATED	Not Qualified	.25 W		LOW HARMONIC DISTORTION	1.3 us		100 V		SILICON
5082-3001	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us		200 V	e0	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.