DUAL PIN Diodes 1,341

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
1SV128TE85L2	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified			.4 us	50 V				SILICON
JDP2S04E	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-F2				Not Qualified		.25 pF		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
1SV128TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified			.4 us	50 V				SILICON
1SV128	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified		.25 pF	.4 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
1SV172	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified		.25 pF		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ISS241	Toshiba	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	38 pF	POSITIVE-INTRINSIC-NEGATIVE	1		IN-LINE				SWITCHING		R-PDIP-T2	.9 ohm			Not Qualified				30 V		NOT SPECIFIED	240	SILICON
JDP2S01S	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	TIN LEAD	R-PDSO-F2	1 ohm			Not Qualified		.65 pF		30 V	e0			SILICON	100 MHz
1SV172TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified		.25 pF		50 V				SILICON
1SV172TE85R2	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified				50 V				SILICON
JDP2S01U	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G2	1 ohm			Not Qualified		.9 pF		30 V				SILICON	100 MHz
1SV308,L3F(T	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			125 Cel	SWITCHING		R-PDSO-F2								30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
JDP2S02AS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	TIN LEAD	R-PDSO-F2	1.5 ohm			Not Qualified		.3 pF		30 V	e0			SILICON	100 MHz
1SV307	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-G2	1.1 ohm			Not Qualified		.5 pF		30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1500 MHz
JDP3C04TU	Toshiba	PIN DIODE	DUAL	FLAT	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			150 Cel	ATTENUATOR		R-PDSO-F3	1.5 ohm			Not Qualified								SILICON
1SV172TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified				50 V				SILICON
1SV172TE85L2	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified				50 V				SILICON
1SV237TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G4				Not Qualified				50 V				SILICON
1SV252	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR	Tin/Lead (Sn/Pb)	R-PDSO-G3	10 ohm			Not Qualified		.25 pF		50 V	e0			SILICON
1SV252TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified		.25 pF		50 V				SILICON
1SV271	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G2	4.5 ohm			Not Qualified		.25 pF		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
1SV237	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	Varactors	50 V	125 Cel	ATTENUATOR	Tin/Lead (Sn/Pb)	R-PDSO-G4			CATHODE	Not Qualified		.25 pF		50 V	e0			SILICON
1SV252(TE85L,F)	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3	10 ohm					.2 pF		50 V				SILICON	100 MHz
1SV237TE85L	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	Varactors	50 V	125 Cel	ATTENUATOR		R-PDSO-G4				Not Qualified		.25 pF		50 V				SILICON
1SV237(TE85L,F)	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G4			CATHODE			.25 pF		50 V				SILICON
1SV252TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR		R-PDSO-G3				Not Qualified				50 V				SILICON
HVC136	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE	HIGH FREQUENCY	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	2.5 ohm			Not Qualified	.15 W			60 V				SILICON	100 MHz
HVM132WKTR	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				SWITCHING		R-PDSO-G3	2 ohm			Not Qualified	.15 W			60 V				SILICON
HVC133TRV	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				SWITCHING		R-PDSO-F2	.7 ohm			Not Qualified	.15 W			15 V				SILICON
RKP402KS	Renesas Electronics	PIN DIODE	DUAL	FLAT	12	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SEPARATE, 5 ELEMENTS		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	5	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F12	1.3 ohm			Not Qualified	.1 W	.35 pF		30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
HVM14S	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		R-PDSO-G3	7 ohm			Not Qualified	.1 W			50 V				SILICON	100 MHz
RKP201KK	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	2 ohm	1		Not Qualified	.15 W	.35 pF		30 V				SILICON	100 MHz
RKP413KS	Renesas Electronics	PIN DIODE	DUAL	FLAT	12	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SEPARATE, 6 ELEMENTS		.31 pF	POSITIVE-INTRINSIC-NEGATIVE	6	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F12	1.5 ohm			Not Qualified		.31 pF		30 V				SILICON	100 MHz
RKP300KK	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	3.7 ohm			Not Qualified	.1 W	.25 pF		30 V				SILICON	100 MHz
HVU133TRV	Renesas Electronics	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				SWITCHING		R-PDSO-G2	.7 ohm			Not Qualified	.15 W			15 V				SILICON
HVC131-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			125 Cel	SWITCHING	TIN BISMUTH	R-PDSO-F2	1 ohm	1		Not Qualified	.15 W				e6			SILICON
HVM14SRTR	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				ATTENUATOR		R-PDSO-G3	7 ohm			Not Qualified	.1 W			50 V				SILICON
HVU133	Renesas Electronics	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-G2	.7 ohm			Not Qualified	.15 W	1 pF		30 V				SILICON	100 MHz
RKP301KL	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	2.5 ohm			Not Qualified	.1 W	.3 pF		30 V				SILICON	100 MHz
HVC132TRU	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				SWITCHING		R-PDSO-F2	2 ohm			Not Qualified	.15 W			60 V				SILICON
HVL148	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.37 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F2	2.5 ohm			Not Qualified	.1 W			30 V				SILICON	100 MHz
HVC131TRF-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING	Tin/Bismuth (Sn/Bi)	R-PDSO-F2	1 ohm	1		Not Qualified	.15 W	.8 pF		60 V	e6	20	260	SILICON	100 MHz
HVM14TR-E	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				ATTENUATOR	TIN BISMUTH	R-PDSO-G3	7 ohm	1		Not Qualified	.1 W			50 V	e6			SILICON
RKP410KS	Renesas Electronics	PIN DIODE	DUAL	FLAT	12	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SEPARATE, 6 ELEMENTS		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	6	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		R-PDSO-F12	1.3 ohm	1		Not Qualified	.1 W	.35 pF		30 V				SILICON	100 MHz
HVM187STR	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY	2.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				ATTENUATOR	TIN LEAD	R-PDSO-G3	5.5 ohm			Not Qualified	.1 W			60 V	e0			SILICON
HVM187WKTL	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY	2.4 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				ATTENUATOR	TIN LEAD	R-PDSO-G3	5.5 ohm			Not Qualified	.1 W			60 V	e0			SILICON
HVC131TRF	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE				SWITCHING	TIN LEAD	R-PDSO-F2	1 ohm			Not Qualified	.15 W			60 V	e0			SILICON
HVD131KRF-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			125 Cel	SWITCHING		R-PDSO-F2	1 ohm				.15 W							SILICON
HVM131SRTL	Renesas Electronics	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.8 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE				SWITCHING		R-PDSO-G3	1 ohm			Not Qualified	.15 W			60 V				SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.