END PIN Diodes 40

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
DC2118B	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm		Not Qualified	.25 W			.05 us	100 V					SILICON
DC2110A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE	HIGH FREQUENCY TO KU BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	2 ohm		Not Qualified	.25 W			.005 us	50 V					SILICON
UM6606A	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	MICROWAVE	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XEMW-N2	2.5 ohm		Not Qualified	6 W	.4 pF		1 us	600 V		e0			SILICON	100 MHz
UM6606SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM				ATTENUATOR; SWITCHING		TIN LEAD	O-XELF-R2	2.5 ohm	ISOLATED	Not Qualified	4.5 W			1 us	600 V		e0			SILICON
DC2118A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm		Not Qualified	.25 W			.05 us	100 V					SILICON
UM9415SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm	ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V		e0			SILICON	100 MHz
UM9401SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm	ISOLATED	Not Qualified	1.5 W	1.5 pF	LOW DISTORTION	2 us	50 V		e0			SILICON	100 MHz
DC2103A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1.2 ohm		Not Qualified	.25 W		AVAILABLE IN BOTH POLARITIES	2 us	500 V					SILICON
UMX9989SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS		SINGLE	MEDIUM FREQUENCY TO VERY HIGH FREQUENCY	1 V	5 pF		1	0 V	LONG FORM	Rectifier Diodes	75 V	150 Cel	LIMITER	-65 Cel		O-LELF-R2		ISOLATED			1.2 pF			75 V	2.5 A				SILICON
UMX9989AP	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SERIES CONNECTED, 2 ELEMENTS	VERY HIGH FREQUENCY	.4 V	8 pF	POSITIVE-INTRINSIC-NEGATIVE	2		LONG FORM	Other Diodes		150 Cel	GENERAL PURPOSE	-65 Cel		O-XELF-R2		ISOLATED			4 pF				2 A				SILICON
GC4750-42	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED		SINGLE	KU BAND			POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE				LIMITER			O-XEMW-N2			Not Qualified					250 V					SILICON
MA4L021-120	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO KU BAND			POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			175 Cel	LIMITER			O-CEMW-N2			Not Qualified			LOW LEAKAGE		35 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
MA4P604-255	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		DISK BUTTON	PIN Diodes		175 Cel	SWITCHING			R-CEDB-N2	1 ohm	CATHODE	Not Qualified			HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT	3 us	1000 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
BXY43-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz
BXY44-T2P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm		Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3			SILICON	100 MHz
BXY43-P1S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz
BXY42-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3			SILICON	100 MHz
BXY44-T2H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm		Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON		ESA-SCC-5513/030
BXY42-TES	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3			SILICON	100 MHz	ESA-SCC-5513/017
BXY43-P1ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2ES	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm		Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY43-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz
BXY43-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	1.5 ohm	ISOLATED	Not Qualified	.5 W	.3 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz
BXY43-P1H	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz
BXY43-P1P	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	.02 mA	SINGLE			.75 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	1.5 ohm		Not Qualified	.5 W	.5 pF	HIGH RELIABILITY	.65 us	150 V		e3			SILICON	100 MHz
BXY44-TH	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY44-T2S	Infineon Technologies	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CEMW-N2	5 ohm		Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
BXY42-TP	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.24 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING		MATTE TIN	O-CELF-R2	2.5 ohm	ISOLATED	Not Qualified	.6 W	.24 pF	HIGH RELIABILITY	.05 us	50 V		e3			SILICON	100 MHz
BXY44-TS	Infineon Technologies	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	O-CELF-R2	5 ohm	ISOLATED	Not Qualified	.5 W	.2 pF	HIGH RELIABILITY	.8 us	200 V		e3			SILICON	100 MHz	ESA-SCC-5513/030
5082-3305	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm		Not Qualified	.7 W				70 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3304	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm		Not Qualified	3 W			.1 us	250 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3306	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm		Not Qualified	1.25 W				70 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3303	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm		Not Qualified	3 W			.1 us	200 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3201	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm		Not Qualified	3 W			.1 us	200 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3101	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm		Not Qualified	1 W			.1 us	200 V			NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3202	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm		Not Qualified	3 W			.1 us	300 V			NOT SPECIFIED	NOT SPECIFIED	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.