Microchip Technology PIN Diodes 26

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	Maximum Non Repetitive Peak Forward Current	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
UM7512DR	Microchip Technology	PIN DIODE	RADIAL	FLAT	2	NO	ROUND	UNSPECIFIED		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		POST/STUD MOUNT				ATTENUATOR; SWITCHING		TIN LEAD	O-XRPM-F2	1 ohm		Not Qualified	7.5 W		LOW DISTORTION, METALLURGICALLY BONDED	3.5 us			e0			SILICON
GC4225-150B/TR	Microchip Technology	PIN DIODE							20 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V				150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel			.6 ohm					HIGH RELIABILITY	.5 us	250 V					SILICON	1000 MHz	MIL-19500
GC4225-150B	Microchip Technology	PIN DIODE							20 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V				150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel			.6 ohm					HIGH RELIABILITY	.5 us	250 V					SILICON	1000 MHz	MIL-19500
UM6606A	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	MICROWAVE	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XEMW-N2	2.5 ohm		Not Qualified	6 W	.4 pF		1 us	600 V		e0			SILICON	100 MHz
UM6601B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm	ISOLATED	Not Qualified	2.5 W	.4 pF		1 us	100 V		e0			SILICON	100 MHz
UM6606SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM				ATTENUATOR; SWITCHING		TIN LEAD	O-XELF-R2	2.5 ohm	ISOLATED	Not Qualified	4.5 W			1 us	600 V		e0			SILICON
UM6610B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm	ISOLATED	Not Qualified	2.5 W	.4 pF		1 us	1000 V		e0			SILICON	100 MHz
UM7512CR	Microchip Technology	PIN DIODE	UPPER	NO LEAD	1	NO	ROUND	UNSPECIFIED		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		POST/STUD MOUNT				ATTENUATOR; SWITCHING		TIN LEAD	O-XUPM-N1	1 ohm	ANODE	Not Qualified	10 W		LOW DISTORTION, METALLURGICALLY BONDED	3.5 us			e0			SILICON
MPL4700-206/TR	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	X BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			150 Cel		-55 Cel		R-XBCC-N2	2 ohm							25 V					SILICON
MPL4701-206	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY TO X BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	CHIP CARRIER	PIN Diodes		150 Cel	LIMITER	-55 Cel	GOLD	R-XBCC-N2	2.5 ohm							15 V		e4			SILICON	1000 MHz
UM9415	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	50 mA	SINGLE			4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1 ohm	ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V		e0			SILICON	100 MHz
UM9415B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-XALF-W2	1 ohm	ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V		e0			SILICON	100 MHz
UM9415SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm	ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us	50 V		e0			SILICON	100 MHz
UM9401SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm	ISOLATED	Not Qualified	1.5 W	1.5 pF	LOW DISTORTION	2 us	50 V		e0			SILICON	100 MHz
MPL4700-206-HS	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY TO X BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			150 Cel		-55 Cel	GOLD	R-XBCC-N2	2 ohm							25 V		e4			SILICON
UM4001B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	HIGH FREQUENCY TO S BAND		3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V	LONG FORM	PIN Diodes			ATTENUATOR; SWITCHING		TIN LEAD	O-XALF-W2	.5 ohm	ISOLATED	Not Qualified	2.5 W	2.4 pF	LOW DISTORTION	10 us			e0			SILICON	100 MHz
MPL4700-206	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY TO X BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	CHIP CARRIER	PIN Diodes		150 Cel	LIMITER	-55 Cel	GOLD	R-XBCC-N2	2 ohm							25 V		e4			SILICON	1000 MHz
UMX9989SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS		SINGLE	MEDIUM FREQUENCY TO VERY HIGH FREQUENCY	1 V	5 pF		1	0 V	LONG FORM	Rectifier Diodes	75 V	150 Cel	LIMITER	-65 Cel		O-LELF-R2		ISOLATED			1.2 pF			75 V	2.5 A				SILICON
UMX9989AP	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SERIES CONNECTED, 2 ELEMENTS	VERY HIGH FREQUENCY	.4 V	8 pF	POSITIVE-INTRINSIC-NEGATIVE	2		LONG FORM	Other Diodes		150 Cel	GENERAL PURPOSE	-65 Cel		O-XELF-R2		ISOLATED			4 pF				2 A				SILICON
GC4430-00	Microchip Technology	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY TO KU BAND		.1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING	-55 Cel	Gold (Au)	S-XUUC-N1	1.5 ohm		Not Qualified			HIGH RELIABILITY, LOW DISTORTION	.6 us	300 V		e4			SILICON	100 MHz	MIL-19500
GC4701-6LP	Microchip Technology	PIN DIODE	DUAL	NO LEAD	6	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	X BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	16 V	SMALL OUTLINE			150 Cel	ATTENUATOR; LIMITER	-55 Cel		S-PDSO-N6	2 ohm				.45 pF		.01 us	20 V			NOT SPECIFIED	NOT SPECIFIED	SILICON	1000 MHz
GC4750-42	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED		SINGLE	KU BAND			POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE				LIMITER			O-XEMW-N2			Not Qualified					250 V					SILICON
GC4941-12	Microchip Technology	PIN DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED	UNSPECIFIED	10 mA	SINGLE	KU BAND		.06 pF	POSITIVE-INTRINSIC-NEGATIVE	1	10 V	MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		GOLD	X-XXMW-F2	1.5 ohm		Not Qualified		.06 pF		.05 us	50 V		e4			SILICON	2200 MHz
UM9441	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ELLIPTICAL	UNSPECIFIED		SINGLE	MEDIUM FREQUENCY		10 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	LONG FORM	PIN Diodes		175 Cel		-55 Cel	TIN LEAD	E-XALF-W2		ISOLATED	Not Qualified			HIGH RELIABILITY	2 us	100 V		e0			SILICON
UMX6001B	Microchip Technology	PIN DIODE				NO			100 mA	SINGLE			.5 pF	POSITIVE-INTRINSIC-NEGATIVE	1	100 V		PIN Diodes		175 Cel					1.7 ohm				.5 pF		1 us	100 V					SILICON	100 MHz
UPP9401E3/TR7	Microchip Technology	PIN DIODE	SINGLE	GULL WING	1	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PSSO-G1	1 ohm	ANODE	Not Qualified	2.5 W		LOW DISTORTION	2 us	50 V		e3			SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.