Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Diode Resistive Test Current | Config | Frequency Band | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Maximum Diode Forward Resistance | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | Nominal Minority Carrier Lifetime | JEDEC-95 Code | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Diode Resistive Test Frequency | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
HIGH FREQUENCY TO S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
5 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
Matte Tin (Sn) |
R-PDSO-G3 |
1.2 ohm |
1 |
Not Qualified |
.25 W |
.21 pF |
.1 us |
50 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
||||||||||
Broadcom |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
100 mA |
SINGLE |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
LONG FORM |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
TIN LEAD |
O-LALF-W2 |
2.5 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.4 pF |
LOW HARMONIC DISTORTION |
1.3 us |
100 V |
e0 |
SILICON |
100 MHz |
||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-N2 |
2.5 ohm |
Not Qualified |
.12 pF |
.005 us |
15 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
10 mA |
SINGLE |
KA BAND |
.15 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
S-XUUC-N1 |
2 ohm |
CATHODE |
Not Qualified |
.005 us |
20 V |
40 |
260 |
SILICON |
100 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-F2 |
1.5 ohm |
Not Qualified |
.26 pF |
1.17 us |
250 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
ROHM |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
3 mA |
SINGLE |
VERY HIGH FREQUENCY |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
1 V |
SMALL OUTLINE |
150 Cel |
SWITCHING |
TIN |
R-PDSO-F2 |
2 ohm |
HIGH RELIABILITY |
50 V |
e3 |
SILICON |
100 MHz |
|||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
HIGH FREQUENCY TO L BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR |
Matte Tin (Sn) |
R-PDSO-G3 |
3 ohm |
1 |
Not Qualified |
.25 W |
LOW DISTORTION |
1.5 us |
200 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
HIGH FREQUENCY TO S BAND |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
-65 Cel |
Matte Tin (Sn) |
R-PDSO-G3 |
1.5 ohm |
1 |
Not Qualified |
.75 W |
.4 us |
50 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SINGLE |
HIGH FREQUENCY TO S BAND |
1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1.5 ohm |
1 |
Not Qualified |
.75 W |
.4 us |
50 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
1 mA |
SINGLE |
HIGH FREQUENCY TO C BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
30 V |
SMALL OUTLINE |
150 Cel |
ATTENUATOR; SWITCHING |
-40 Cel |
S-PDSO-N2 |
14.5 ohm |
CATHODE |
2.5 W |
LOW DISTORTION |
.6 us |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
100 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
HIGH FREQUENCY TO S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
5 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
Matte Tin (Sn) |
R-PDSO-F2 |
1.2 ohm |
1 |
Not Qualified |
.25 W |
.21 pF |
.1 us |
50 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
||||||||||
Broadcom |
PIN DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
100 mA |
SINGLE |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
LONG FORM |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
3.5 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.4 pF |
LOW HARMONIC DISTORTION |
2.5 us |
100 V |
e0 |
SILICON |
100 MHz |
|||||||||||
|
Skyworks Solutions |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
10 mA |
SINGLE |
KA BAND |
.1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
S-XUUC-N1 |
1.5 ohm |
CATHODE |
Not Qualified |
LOW DISTORTION |
.09 us |
50 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
10 mA |
SINGLE |
KA BAND |
.2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
S-XUUC-N1 |
1 ohm |
CATHODE |
Not Qualified |
LOW DISTORTION |
.12 us |
50 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
ATTENUATOR; SWITCHING |
S-XUUC-N1 |
1 ohm |
Not Qualified |
50 us |
50 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
10 mA |
SINGLE |
KA BAND |
.1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
S-XUUC-N1 |
2 ohm |
Not Qualified |
LOW DISTORTION |
.3 us |
200 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
|||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
10 mA |
SINGLE |
KA BAND |
.2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
UNCASED CHIP |
PIN Diodes |
175 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
S-XUUC-N1 |
1.2 ohm |
Not Qualified |
LOW DISTORTION |
.9 us |
200 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.375 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
150 Cel |
LIMITER |
MATTE TIN |
R-PDSO-G3 |
2.5 ohm |
1 |
Not Qualified |
.2 us |
100 V |
e3 |
SILICON |
|||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
10 mA |
SINGLE |
KA BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
0 V |
MICROWAVE |
PIN Diodes |
175 Cel |
LIMITER |
-65 Cel |
O-CDMW-N2 |
2.5 ohm |
Not Qualified |
.12 pF |
.007 us |
30 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
500 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
YES |
10 mA |
1 |
38 V |
PIN Diodes |
150 Cel |
-40 Cel |
1.2 ohm |
1 |
.6 pF |
.1 us |
120 V |
260 |
SILICON |
500 MHz |
||||||||||||||||||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
COMMON CATHODE, 2 ELEMENTS |
.8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
.6 ohm |
1 |
Not Qualified |
.25 W |
.6 pF |
LOW DISTORTION |
.07 us |
50 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
100 mA |
COMMON ANODE, 2 ELEMENTS |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
NICKEL PALLADIUM GOLD |
R-PDSO-G3 |
1.5 ohm |
1 |
Not Qualified |
.25 W |
.3 pF |
LOW DISTORTION |
.5 us |
200 V |
e4 |
20 |
260 |
SILICON |
100 MHz |
||||||||||
|
Broadcom |
PIN DIODE |
DUAL |
GULL WING |
6 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 3 ELEMENTS |
POSITIVE-INTRINSIC-NEGATIVE |
3 |
50 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
MATTE TIN |
R-PDSO-G6 |
1 |
Not Qualified |
.2 pF |
LOW DISTORTION |
.5 us |
50 V |
e3 |
20 |
260 |
SILICON |
|||||||||||||||
|
ROHM |
PIN DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
VERY HIGH FREQUENCY |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
1 V |
SMALL OUTLINE |
150 Cel |
SWITCHING |
TIN |
R-PDSO-F2 |
2 ohm |
HIGH RELIABILITY |
60 V |
e3 |
SILICON |
100 MHz |
|||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
NO LEAD |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
1 mA |
SINGLE |
HIGH FREQUENCY TO C BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
30 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
S-PDSO-N2 |
2 ohm |
1 |
CATHODE |
3 W |
.23 pF |
LOW DISTORTION |
1 us |
200 V |
260 |
SILICON |
100 MHz |
||||||||||||
|
Skyworks Solutions |
PIN DIODE |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
260 |
SILICON |
|||||||||||||||||||||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
S BAND |
.25 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
30 V |
CHIP CARRIER |
PIN Diodes |
175 Cel |
SWITCHING |
R-PBCC-N2 |
.9 ohm |
1 |
Not Qualified |
.75 W |
.23 pF |
.4 us |
50 V |
40 |
260 |
SILICON |
100 MHz |
||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
10 mA |
SINGLE |
HIGH FREQUENCY TO S BAND |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
30 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
SWITCHING |
Tin (Sn) |
R-PDSO-G3 |
.9 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.3 pF |
.4 us |
50 V |
e3 |
40 |
260 |
SILICON |
100 MHz |
|||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
HIGH FREQUENCY TO S BAND |
.25 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
SWITCHING |
Matte Tin (Sn) |
R-PDSO-G3 |
2 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.4 us |
e3 |
40 |
260 |
SILICON |
||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
HIGH FREQUENCY TO S BAND |
.25 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
CHIP CARRIER |
175 Cel |
SWITCHING |
R-PBCC-N2 |
2 ohm |
1 |
Not Qualified |
.75 W |
.4 us |
40 |
260 |
SILICON |
||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
C BEND |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
100 mA |
SINGLE |
HIGH FREQUENCY TO C BAND |
.65 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 V |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
S-PDSO-C2 |
.5 ohm |
1 |
CATHODE |
3 W |
.56 pF |
LOW DISTORTION |
5 us |
200 V |
260 |
SILICON |
100 MHz |
||||||||||||
|
Skyworks Solutions |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1 mA |
SINGLE |
HIGH FREQUENCY TO X BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
30 V |
CHIP CARRIER |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
R-PBCC-N2 |
14.5 ohm |
.25 W |
.18 pF |
LOW DISTORTION |
.6 us |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
100 MHz |
||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
SINGLE |
.45 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
20 ohm |
1 |
260 |
SILICON |
|||||||||||||||||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
5 mA |
SINGLE |
S BAND |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
5 V |
CHIP CARRIER |
PIN Diodes |
175 Cel |
SWITCHING |
-55 Cel |
R-XBCC-N2 |
1.2 ohm |
1 |
Not Qualified |
.75 W |
.21 pF |
.1 us |
50 V |
40 |
260 |
SILICON |
100 MHz |
|||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
C BAND |
.2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
ATTENUATOR; SWITCHING |
Matte Tin (Sn) |
R-PDSO-G3 |
2 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.1 us |
e3 |
40 |
260 |
SILICON |
||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
BOTTOM |
BUTT |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
RING, 4 ELEMENTS |
C BAND |
.2 pF |
POSITIVE-INTRINSIC-NEGATIVE |
4 |
GRID ARRAY |
ATTENUATOR; SWITCHING |
R-PBGA-B4 |
2 ohm |
1 |
ISOLATED |
Not Qualified |
.25 W |
.1 us |
30 |
260 |
SILICON |
||||||||||||||||||
|
Skyworks Solutions |
PIN DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
HIGH FREQUENCY TO S BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
SMALL OUTLINE |
SWITCHING |
R-PDSO-G3 |
1.35 ohm |
Not Qualified |
.25 W |
LOW DISTORTION |
1 us |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||
|
Microchip Technology |
PIN DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
SERIES CONNECTED, 2 ELEMENTS |
VERY HIGH FREQUENCY |
.4 V |
8 pF |
POSITIVE-INTRINSIC-NEGATIVE |
2 |
LONG FORM |
Other Diodes |
150 Cel |
GENERAL PURPOSE |
-65 Cel |
O-XELF-R2 |
ISOLATED |
4 pF |
2 A |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
PIN DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.5 mA |
SINGLE |
S BAND |
.35 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
SMALL OUTLINE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
-65 Cel |
TIN |
R-PDSO-G2 |
1.35 ohm |
1 |
Not Qualified |
.5 W |
.52 pF |
HIGH VOLTAGE |
1.55 us |
175 V |
e3 |
30 |
260 |
SILICON |
100 MHz |
|||||||||
|
Microchip Technology |
PIN DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
100 mA |
SINGLE |
ULTRA HIGH FREQUENCY TO KU BAND |
.1 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
50 V |
UNCASED CHIP |
150 Cel |
ATTENUATOR; SWITCHING |
-55 Cel |
Gold (Au) |
S-XUUC-N1 |
1.5 ohm |
Not Qualified |
HIGH RELIABILITY, LOW DISTORTION |
.6 us |
300 V |
e4 |
SILICON |
100 MHz |
MIL-19500 |
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|
Microchip Technology |
PIN DIODE |
DUAL |
NO LEAD |
6 |
YES |
SQUARE |
PLASTIC/EPOXY |
10 mA |
SINGLE |
X BAND |
.4 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
16 V |
SMALL OUTLINE |
150 Cel |
ATTENUATOR; LIMITER |
-55 Cel |
S-PDSO-N6 |
2 ohm |
.45 pF |
.01 us |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
1000 MHz |
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Microchip Technology |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
UNSPECIFIED |
SINGLE |
KU BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
LIMITER |
O-XEMW-N2 |
Not Qualified |
250 V |
SILICON |
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|
Microchip Technology |
PIN DIODE |
UNSPECIFIED |
FLAT |
2 |
YES |
UNSPECIFIED |
UNSPECIFIED |
10 mA |
SINGLE |
KU BAND |
.06 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
10 V |
MICROWAVE |
PIN Diodes |
150 Cel |
ATTENUATOR; SWITCHING |
GOLD |
X-XXMW-F2 |
1.5 ohm |
Not Qualified |
.06 pF |
.05 us |
50 V |
e4 |
SILICON |
2200 MHz |
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|
TE Connectivity |
PIN DIODE |
20 mA |
5 V |
PIN Diodes |
125 Cel |
4.9 ohm |
.02 pF |
.005 us |
50 V |
10000 MHz |
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|
M/a-com Technology Solutions |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
HIGH FREQUENCY TO KU BAND |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
MICROWAVE |
175 Cel |
LIMITER |
O-CEMW-N2 |
Not Qualified |
LOW LEAKAGE |
35 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
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|
M/a-com Technology Solutions |
PIN DIODE |
END |
NO LEAD |
2 |
YES |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
100 mA |
SINGLE |
.3 pF |
POSITIVE-INTRINSIC-NEGATIVE |
1 |
DISK BUTTON |
PIN Diodes |
175 Cel |
SWITCHING |
R-CEDB-N2 |
1 ohm |
CATHODE |
Not Qualified |
HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT |
3 us |
1000 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||
|
TE Connectivity |
PIN DIODE |
YES |
100 mA |
100 V |
PIN Diodes |
175 Cel |
.5 ohm |
1 pF |
2.5 us |
400 V |
100 MHz |
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|
TE Connectivity |
PIN DIODE |
YES |
100 mA |
100 V |
PIN Diodes |
125 Cel |
.5 ohm |
1 pF |
6 us |
100 V |
100 MHz |
PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.
PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.
PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.
PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.