Toshiba Special Microwave Diodes 12
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Config | Nominal Operating Voltage | No. of Elements | Package Style (Meter) | Sub-Category | Maximum Operating Temperature | Application | Minimum Operating Temperature | Terminal Finish | Minimum Output Power | JESD-30 Code | Qualification | Nominal Diode Capacitance | Additional Features | Minimum Breakdown Voltage | JESD-609 Code | Minimum Operating Frequency | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Typical Operating Current | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba |
IMPATT DIODE |
NO |
120 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
2 W |
10 GHz |
225 mA |
20 GHz |
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|
Toshiba |
GUNN DIODE |
YES |
10 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
Tin/Lead (Sn/Pb) |
.02 W |
e0 |
8.5 GHz |
150 mA |
12 GHz |
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|
Toshiba |
GUNN DIODE |
NO |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.12 W |
5.5 GHz |
8 GHz |
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|
Toshiba |
GUNN DIODE |
NO |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.05 W |
5.5 GHz |
8 GHz |
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|
Toshiba |
IMPATT DIODE |
NO |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
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|
Toshiba |
GUNN DIODE |
NO |
10 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.1 W |
8.2 GHz |
400 mA |
10.5 GHz |
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|
Toshiba |
IMPATT DIODE |
NO |
83 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.75 W |
6 GHz |
135 mA |
12 GHz |
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|
Toshiba |
GUNN DIODE |
8 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.15 W |
10.5 GHz |
50 mA |
12 GHz |
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|
Toshiba |
IMPATT DIODE |
NO |
120 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
1.7 W |
10 GHz |
225 mA |
20 GHz |
||||||||||||||||||||||
|
Toshiba |
GUNN DIODE |
NO |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.18 W |
10.5 GHz |
12 GHz |
||||||||||||||||||||||||
|
Toshiba |
IMPATT DIODE |
NO |
83 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.6 W |
6 GHz |
130 mA |
12 GHz |
||||||||||||||||||||||
|
Toshiba |
IMPATT DIODE |
NO |
80 V |
Microwave Special Purpose Diodes |
CONTINUOUS WAVE |
.5 W |
6 GHz |
100 mA |
12 GHz |
Special microwave diodes are electronic components that are designed for specific applications in microwave and radio frequency systems. They provide unique properties and characteristics that enable specific functions or tasks, such as high power handling, low noise, and high frequency response.
One example of a special microwave diode is the Schottky diode, which is a high-speed diode that uses a metal-semiconductor junction to allow for fast switching and low forward voltage drop. Schottky diodes are commonly used in high-frequency rectifiers, mixers, and detectors.
Another example is the Gunn diode, which is a semiconductor device that produces microwave signals through the process of Gunn effect. Gunn diodes are commonly used in electronic circuits that require low-power microwave generation, such as radar systems and electronic countermeasures.
The varactor diode is another type of special microwave diode that is used as a voltage-controlled capacitor, allowing for tunable capacitance in electronic circuits. Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators and frequency synthesizers.
Other special microwave diodes include step recovery diodes, which are used as fast-switching diodes in electronic circuits that require precise timing or pulse generation, and avalanche photodiodes, which are used in high-speed optical communication systems.