GULL WING Stabistor Diodes 9

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Manufacturers
    • Diodes Incorporated
    • Microsemi
    • NXP Semiconductors
    • Onsemi
    • STMicroelectronics
    • Texas Instruments
Diode Type
    • STABISTOR DIODE
Terminal Position
    • AXIAL
    • DUAL
    • END
Terminal Form (1)
    • GULL WING
    • NO LEAD
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 2
    • 3
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
Package Body Material
    • CERAMIC, GLASS-SEALED
    • GLASS
    • PLASTIC/EPOXY
Config
    • SINGLE
Maximum Forward Voltage (VF)
    • .75 V
    • .82 V
    • .94 V
    • .96 V
    • 1 V
    • 1.05 V
    • 1.38 V
    • 1.5 V
    • 1.55 V
    • 2.15 V
    • 2.8 V
    • 3.45 V
No. of Elements
    • 1
Reverse Test Voltage
    • 10 V
    • 4 V
    • 5 V
Package Style (Meter)
    • LONG FORM
    • SMALL OUTLINE
Sub-Category
    • Stabistor Diodes
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • MATTE TIN
    • TIN
    • TIN LEAD
    • Tin (Sn)
Minimum Forward Voltage (VF)
    • .65 V
    • .71 V
    • .85 V
    • .87 V
    • .875 V
    • 1.24 V
    • 1.3 V
    • 1.35 V
    • 1.85 V
    • 2.35 V
    • 2.85 V
JESD-30 Code
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-PALF-W2
    • R-PDSO-G3
Moisture Sensitivity Level (MSL)
    • 1
Case Connection
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .25 W
    • .33 W
    • .35 W
    • .4 W
    • .5 W
    • 1.3 W
    • 2 W
Additional Features
    • DIFFERENTIAL RESISTANCE IS 20 OHMS
    • DIFFERENTIAL RESISTANCE IS 30 OHMS
    • DIFFERENTIAL RESISTANCE IS 32.5 OHMS
    • DIFFERENTIAL RESISTANCE IS 35 OHMS
    • DIFFERENTIAL RESISTANCE IS 50 OHMS
    • OPTIONALLY AVAILABLE IN DO-41 PACKAGE WITH 1.5W POWER DISSIPATION
JEDEC-95 Code
    • DO-35
    • DO-41
    • TO-236AB
JESD-609 Code
    • e0
    • e3
Maximum Time At Peak Reflow Temperature (s)
    • 30
Peak Reflow Temperature (C)
    • 225
    • 260
Diode Element Material
    • SILICON
Reference Standard
    • CECC50001-026
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Forward Voltage (VF) No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Forward Voltage (VF) JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Reference Standard

BAS17,215

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

Stabistor Diodes

150 Cel

TIN

.87 V

R-PDSO-G3

1

Not Qualified

.25 W

TO-236AB

e3

30

260

SILICON

BAS17

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

Stabistor Diodes

150 Cel

Tin (Sn)

.87 V

R-PDSO-G3

1

Not Qualified

.25 W

TO-236AB

e3

30

260

SILICON

BAS17212

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

150 Cel

.87 V

R-PDSO-G3

Not Qualified

.25 W

SILICON

933526230215

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

SMALL OUTLINE

TIN

.87 V

R-PDSO-G3

1

Not Qualified

.25 W

e3

SILICON

BAS17235

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

150 Cel

.87 V

R-PDSO-G3

Not Qualified

.25 W

SILICON

BAS17TRL

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

SMALL OUTLINE

TIN

.87 V

R-PDSO-G3

Not Qualified

e3

SILICON

BAS17-T

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

150 Cel

TIN

.87 V

R-PDSO-G3

Not Qualified

.25 W

TO-236AB

e3

SILICON

BAS17T/R

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

4 V

SMALL OUTLINE

Stabistor Diodes

150 Cel

MATTE TIN

.87 V

R-PDSO-G3

Not Qualified

.25 W

TO-236AB

e3

260

SILICON

BAS17TRL13

NXP Semiconductors

STABISTOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.96 V

1

SMALL OUTLINE

TIN

.87 V

R-PDSO-G3

Not Qualified

e3

SILICON

Stabistor Diodes

Stabistor diodes are electronic components that are used as voltage regulators in electronic circuits. They are designed to provide a constant voltage output, independent of the input voltage, current, or temperature.

Stabistor diodes consist of a P-N junction and a resistor that are connected in series. The resistor is typically made of a metal film or carbon composition, and it provides a fixed voltage drop that is added to the voltage drop across the P-N junction. This voltage drop is proportional to the current flowing through the diode, resulting in a constant output voltage.

Stabistor diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Stabistor diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and current ratings, depending on the application and the required performance.