AXIAL Stabistor Diodes 66

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  2. Stabistor Diodes
Manufacturers
    • Diodes Incorporated
    • Microsemi
    • NXP Semiconductors
    • Onsemi
    • STMicroelectronics
    • Texas Instruments
Diode Type
    • STABISTOR DIODE
Terminal Position (1)
    • AXIAL
    • DUAL
    • END
Terminal Form
    • GULL WING
    • NO LEAD
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 2
    • 3
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
Package Body Material
    • CERAMIC, GLASS-SEALED
    • GLASS
    • PLASTIC/EPOXY
Config
    • SINGLE
Maximum Forward Voltage (VF)
    • .75 V
    • .82 V
    • .94 V
    • .96 V
    • 1 V
    • 1.05 V
    • 1.38 V
    • 1.5 V
    • 1.55 V
    • 2.15 V
    • 2.8 V
    • 3.45 V
No. of Elements
    • 1
Reverse Test Voltage
    • 10 V
    • 4 V
    • 5 V
Package Style (Meter)
    • LONG FORM
    • SMALL OUTLINE
Sub-Category
    • Stabistor Diodes
Maximum Operating Temperature
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • MATTE TIN
    • TIN
    • TIN LEAD
    • Tin (Sn)
Minimum Forward Voltage (VF)
    • .65 V
    • .71 V
    • .85 V
    • .87 V
    • .875 V
    • 1.24 V
    • 1.3 V
    • 1.35 V
    • 1.85 V
    • 2.35 V
    • 2.85 V
JESD-30 Code
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-N2
    • O-LELF-R2
    • O-PALF-W2
    • R-PDSO-G3
Moisture Sensitivity Level (MSL)
    • 1
Case Connection
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .25 W
    • .33 W
    • .35 W
    • .4 W
    • .5 W
    • 1.3 W
    • 2 W
Additional Features
    • DIFFERENTIAL RESISTANCE IS 20 OHMS
    • DIFFERENTIAL RESISTANCE IS 30 OHMS
    • DIFFERENTIAL RESISTANCE IS 32.5 OHMS
    • DIFFERENTIAL RESISTANCE IS 35 OHMS
    • DIFFERENTIAL RESISTANCE IS 50 OHMS
    • OPTIONALLY AVAILABLE IN DO-41 PACKAGE WITH 1.5W POWER DISSIPATION
JEDEC-95 Code
    • DO-35
    • DO-41
    • TO-236AB
JESD-609 Code
    • e0
    • e3
Maximum Time At Peak Reflow Temperature (s)
    • 30
Peak Reflow Temperature (C)
    • 225
    • 260
Diode Element Material
    • SILICON
Reference Standard
    • CECC50001-026
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Maximum Forward Voltage (VF) No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Minimum Forward Voltage (VF) JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Reference Standard

MZ2361

Microsemi

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.38 V

1

LONG FORM

Stabistor Diodes

175 Cel

-65 Cel

TIN LEAD

1.24 V

O-LALF-W2

ISOLATED

Not Qualified

.5 W

OPTIONALLY AVAILABLE IN DO-41 PACKAGE WITH 1.5W POWER DISSIPATION

DO-35

e0

SILICON

BA315

Texas Instruments

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

5 V

LONG FORM

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 50 OHMS

DO-35

SILICON

G129

Texas Instruments

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

CERAMIC, GLASS-SEALED

SINGLE

1 V

1

LONG FORM

O-GALF-W2

ISOLATED

Not Qualified

SILICON

G130

Texas Instruments

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

CERAMIC, GLASS-SEALED

SINGLE

1 V

1

LONG FORM

O-GALF-W2

ISOLATED

Not Qualified

SILICON

PLE1.5

STMicroelectronics

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

1.55 V

1

5 V

LONG FORM

Stabistor Diodes

125 Cel

-55 Cel

TIN LEAD

1.35 V

O-PALF-W2

ISOLATED

Not Qualified

e0

SILICON

PLE0.7

STMicroelectronics

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

.75 V

1

5 V

LONG FORM

Stabistor Diodes

125 Cel

-55 Cel

TIN LEAD

.65 V

O-PALF-W2

ISOLATED

Not Qualified

e0

SILICON

BA315133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA314136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA315143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

4 V

LONG FORM

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

SILICON

CECC50001-026

BA315/A52A

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 50 OHMS

DO-35

SILICON

BA315116

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314116

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA315136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA220

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

10 V

LONG FORM

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DO-35

SILICON

BA315113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA315153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.05 V

1

5 V

LONG FORM

200 Cel

.875 V

O-LALF-W2

ISOLATED

Not Qualified

.35 W

DO-35

SILICON

BA314T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

4 V

LONG FORM

Stabistor Diodes

200 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

SILICON

CECC50001-026

BA314113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA314153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

.94 V

1

4 V

LONG FORM

200 Cel

.85 V

O-LALF-W2

ISOLATED

Not Qualified

.4 W

DO-35

SILICON

BA315/A52R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

ISOLATED

Not Qualified

DIFFERENTIAL RESISTANCE IS 50 OHMS

DO-35

SILICON

BZV86-3V2143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-3V2T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

LONG FORM

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 35 OHMS

DO-35

SILICON

BZV86-1V4153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V6113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

5 V

LONG FORM

150 Cel

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-1V4136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-3V2133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V0

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

1.85 V

O-LALF-W2

1

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

225

SILICON

BZV86-3V2AMO

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 35 OHMS

SILICON

BZV86-2V6-3V2

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

LONG FORM

150 Cel

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V0T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

1.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 30 OHMS

DO-35

SILICON

BZV86-1V4T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 20 OHMS

DO-35

SILICON

BZV86-2V6

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

5 V

LONG FORM

Stabistor Diodes

150 Cel

2.35 V

O-LALF-W2

1

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 32.5 OHMS

DO-35

SILICON

BZV86-2V0AMO

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

150 Cel

1.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 30 OHMS

SILICON

BZV86-1V4143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V0113

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

150 Cel

1.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V6133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

5 V

LONG FORM

150 Cel

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-3V2153

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-3V2116

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

3.45 V

1

5 V

LONG FORM

150 Cel

2.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V0136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

150 Cel

1.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V6136

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

5 V

LONG FORM

150 Cel

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-1V4116

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V6T/R

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.8 V

1

LONG FORM

2.35 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 32.5 OHMS

DO-35

SILICON

BZV86-2V0133

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

150 Cel

1.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-2V0143

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

2.15 V

1

5 V

LONG FORM

150 Cel

1.85 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DO-35

SILICON

BZV86-1V4AMO

NXP Semiconductors

STABISTOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1.5 V

1

5 V

LONG FORM

150 Cel

1.3 V

O-LALF-W2

ISOLATED

Not Qualified

.33 W

DIFFERENTIAL RESISTANCE IS 20 OHMS

SILICON

Stabistor Diodes

Stabistor diodes are electronic components that are used as voltage regulators in electronic circuits. They are designed to provide a constant voltage output, independent of the input voltage, current, or temperature.

Stabistor diodes consist of a P-N junction and a resistor that are connected in series. The resistor is typically made of a metal film or carbon composition, and it provides a fixed voltage drop that is added to the voltage drop across the P-N junction. This voltage drop is proportional to the current flowing through the diode, resulting in a constant output voltage.

Stabistor diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Stabistor diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and current ratings, depending on the application and the required performance.