Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Minimum Diode Capacitance | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
8 V |
AVALANCHE |
7 |
SMALL OUTLINE |
Transient Suppressors |
5 V |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N16 |
1 |
BIDIRECTIONAL |
Not Qualified |
6 V |
e4 |
260 |
SILICON |
10 V |
||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
AVALANCHE |
2 |
SMALL OUTLINE |
Transient Suppressors |
TIN |
R-PDSO-N16 |
1 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
MO-229C |
9 V |
e3 |
260 |
SILICON |
6 V |
||||||||||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
AVALANCHE |
7 |
SMALL OUTLINE |
5 V |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N16 |
1 |
BIDIRECTIONAL |
6 V |
e4 |
260 |
SILICON |
10 V |
AEC-Q100 |
||||||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8 BANKS, COMMON BIPOLAR TERMINAL, 2 ELEMENTS |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
5 V |
TIN |
R-PDSO-G16 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
24 V |
6 V |
e3 |
270 |
SILICON |
||||||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
1.2 V |
AVALANCHE |
.1 uA |
8 |
40 V |
SMALL OUTLINE |
Other Diodes |
50 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G16 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
ULTRA LOW CAPACITANCE, LOW LEAKAGE CURRENT |
e3 |
270 |
SILICON |
|||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
1.2 V |
AVALANCHE |
.1 uA |
8 |
40 V |
SMALL OUTLINE |
Other Diodes |
50 V |
150 Cel |
-55 Cel |
TIN |
R-PDSO-G16 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
ULTRA LOW CAPACITANCE, LOW LEAKAGE CURRENT |
e3 |
270 |
SILICON |
|||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8 BANKS, COMMON BIPOLAR TERMINAL, 2 ELEMENTS |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
5 V |
TIN |
R-PDSO-G16 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
24 V |
6 V |
e3 |
270 |
SILICON |
||||||||||||||||||||||
General Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON ANODE, 15 ELEMENTS |
500 W |
6 V |
AVALANCHE |
200 uA |
15 |
IN-LINE |
Transient Suppressors |
5 V |
150 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
R-CDIP-T16 |
UNIDIRECTIONAL |
Not Qualified |
880 pF |
LOW CAPACITANCE |
10.6 V |
6 V |
e0 |
SILICON |
|||||||||||||||||||
General Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMMON ANODE, 15 ELEMENTS |
500 W |
AVALANCHE |
200 uA |
15 |
IN-LINE |
5 V |
150 Cel |
-55 Cel |
R-CDIP-T16 |
UNIDIRECTIONAL |
Not Qualified |
880 pF |
LOW CAPACITANCE |
10.6 V |
6 V |
SILICON |
|||||||||||||||||||||||
Sensitron Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMPLEX |
1300 W |
AVALANCHE |
15 |
IN-LINE |
Transient Suppressors |
5 V |
TIN LEAD |
R-CDIP-T16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
10.6 V |
6 V |
e0 |
SILICON |
|||||||||||||||||||||||
Sensitron Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
COMPLEX |
1300 W |
AVALANCHE |
15 |
IN-LINE |
5 V |
R-CDIP-T16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
6 V |
SILICON |
||||||||||||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8 BANKS, COMMON BIPOLAR TERMINAL, 2 ELEMENTS |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
5 V |
TIN |
R-PDSO-G16 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
24 V |
6 V |
e3 |
270 |
SILICON |
||||||||||||||||||||||
General Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 12 ELEMENTS |
500 W |
AVALANCHE |
2 uA |
12 |
IN-LINE |
Transient Suppressors |
15 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PDIP-T16 |
UNIDIRECTIONAL |
Not Qualified |
400 pF |
33 V |
16.7 V |
e0 |
SILICON |
|||||||||||||||||||||
|
STMicroelectronics |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
AVALANCHE |
1 |
SMALL OUTLINE |
Transient Suppressors |
150 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
R-PDSO-N16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
14 V |
6 V |
e4 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
1500 W |
8 V |
AVALANCHE |
2 |
SMALL OUTLINE |
Transient Suppressors |
6 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
MS-013AA |
16 V |
8 V |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
12 V |
125 Cel |
-55 Cel |
TIN LEAD |
R-PDSO-G16 |
UNIDIRECTIONAL |
Not Qualified |
LOW INDUCTANCE |
MS-012AC |
26.6 V |
13.3 V |
e0 |
SILICON |
|||||||||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
12 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
MS-012AC |
26.6 V |
13.3 V |
e3 |
260 |
SILICON |
|||||||||||||||||||
|
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
AVALANCHE |
8 |
SMALL OUTLINE |
75 V |
PURE MATTE TIN |
R-PDSO-G16 |
UNIDIRECTIONAL |
Not Qualified |
1.5 W |
LOW CAPACITANCE |
90 V |
e3 |
SILICON |
|||||||||||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
500 W |
AVALANCHE |
8 |
SMALL OUTLINE |
12 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-G16 |
1 |
BIDIRECTIONAL |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
General Semiconductor |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
THROUGH-HOLE |
16 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON BIPOLAR TERMINAL, 12 ELEMENTS |
500 W |
AVALANCHE |
4 uA |
12 |
IN-LINE |
Transient Suppressors |
24 V |
150 Cel |
-55 Cel |
TIN LEAD |
R-PDIP-T16 |
BIDIRECTIONAL |
Not Qualified |
200 pF |
52.1 V |
26.7 V |
e0 |
SILICON |
|||||||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
500 W |
AVALANCHE |
8 |
SMALL OUTLINE |
5 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-G16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
|
Bourns |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
500 W |
AVALANCHE |
8 |
SMALL OUTLINE |
5 V |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-G16 |
1 |
BIDIRECTIONAL |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
|
Semtech |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
15 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
MS-012AC |
33 V |
16.7 V |
e3 |
20 |
260 |
SILICON |
||||||||||||||||||
Microchip Technology |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
AVALANCHE |
8 |
SMALL OUTLINE |
75 V |
TIN LEAD |
R-PDSO-G16 |
UNIDIRECTIONAL |
Not Qualified |
1.5 W |
LOW CAPACITANCE |
90 V |
e0 |
SILICON |
||||||||||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8 BANKS, COMMON BIPOLAR TERMINAL, 2 ELEMENTS |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
8 V |
TIN |
R-PDSO-G16 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
26 V |
8.5 V |
e3 |
270 |
SILICON |
||||||||||||||||||||||
|
Protek Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
8 BANKS, COMMON BIPOLAR TERMINAL, 2 ELEMENTS |
500 W |
AVALANCHE |
16 |
SMALL OUTLINE |
Transient Suppressors |
15 V |
TIN |
R-PDSO-G16 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
39 V |
16.7 V |
e3 |
270 |
SILICON |
||||||||||||||||||||||
|
Analog Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
CHIP CARRIER |
Other Diodes |
150 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
S-XQCC-N16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Analog Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
CHIP CARRIER |
Other Diodes |
150 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
S-XQCC-N16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Analog Devices |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
FLATPACK |
Other Diodes |
150 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
S-XQFP-N16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 8 ELEMENTS |
300 W |
AVALANCHE |
8 |
SMALL OUTLINE |
5 V |
TIN |
R-PDSO-G16 |
1 |
BIDIRECTIONAL |
Not Qualified |
6 V |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||||||
|
Onsemi |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
AVALANCHE |
2 |
SMALL OUTLINE |
Transient Suppressors |
TIN |
R-PDSO-N16 |
1 |
BIDIRECTIONAL |
Not Qualified |
LOW CAPACITANCE |
MO-229C |
10 V |
e3 |
260 |
SILICON |
6 V |
||||||||||||||||||||||
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
NO LEAD |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1CA16-RC |
AVALANCHE |
16 |
SMALL OUTLINE |
5 V |
85 Cel |
-40 Cel |
R-PDSO-N16 |
UNIDIRECTIONAL |
ANODE |
6 V |
SILICON |
13 V |
IEC-61000-4-2, 4-5 |
||||||||||||||||||||||||||
Diodes Incorporated |
TRANS VOLTAGE SUPPRESSOR DIODE |
DUAL |
GULL WING |
16 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMPLEX |
SCHOTTKY |
24 |
SMALL OUTLINE |
R-PDSO-G16 |
UNIDIRECTIONAL |
Not Qualified |
.625 W |
SILICON |
|||||||||||||||||||||||||||||||
Maxim Integrated |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
FLATPACK |
Other Diodes |
150 Cel |
-40 Cel |
TIN LEAD |
S-XQFP-N16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
e0 |
245 |
SILICON |
||||||||||||||||||||||
Maxim Integrated |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
FLATPACK |
Other Diodes |
150 Cel |
-40 Cel |
S-XQFP-N16 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
Maxim Integrated |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
FLATPACK |
Other Diodes |
150 Cel |
-40 Cel |
S-XQFP-N16 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||
Maxim Integrated |
TRANS VOLTAGE SUPPRESSOR DIODE |
QUAD |
NO LEAD |
16 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
.95 V |
AVALANCHE |
1 |
FLATPACK |
Other Diodes |
150 Cel |
-40 Cel |
TIN LEAD |
S-XQFP-N16 |
1 |
UNIDIRECTIONAL |
Not Qualified |
1.667 W |
LOW CAPACITANCE |
e0 |
245 |
SILICON |
Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.
Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:
1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.
2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.
3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.
4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.
Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.